US6143476A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for high temperature etching of patterned layers using an organic mask stack
Assignee: Applied Materials Inc
•
Filing: 1997-12-12
•
Granted: 2000-11-07
•
Expires: 2017-12-12
Abstract
Abstract The present disclosure pertains to a method of patterning a semiconductor device feature which provides for the easy removal of any residual masking layer which remains after completion of a pattern etching process. The method provides for a multi-layered masking structure which includes a layer of high-temperature organic-based masking material overlaid by either a layer of a high-temperature inorganic masking material which can be patterned to provide an inorganic hard mask, or by a layer of high-temperature imageable organic masking material which can be patterned to provide an organic hard mask. The hard masking material is used to transfer a pattern to the high-temperature organic-based masking material, and then the hard masking material is removed. The high-temperature organic-based masking material is used to transfer the pattern to an underlying semiconductor device feature.
Inventors
- 👤 Yan Ye
- 👤 Allen Zhao
- 👤 Peter Chang-Lin Hsieh
- 👤 Diana Xiaobing Ma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:01
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/73; H10P50/20; H10P50/28; H10P50/286; H10P50/287; H10P50/71; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/084; H10P14/00; H10P14/60; H10P14/68; H10P14/683; H10P14/687; H10P14/69; H10P14/6902; H10P14/692; H10P14/6921; H10P14/69215; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/282; H10P50/283
Claims Analysis
Total Claims: 39
Claim 1
Independent Claim
86 words
A method for patterning semiconductor device features comprising the steps of: (a) transferring a pattern from a patterned photoresist layer through a layer of high-temperature inorganic masking material; (b) transferring the pattern from a multi-layered structure remaining after step (a) through an underlying layer of a high-temperature organic-based masking material; (c) removing any photoresist material which remains after step (b); and (d) transferring the pattern from the multi-layered structure present after step (c) through at least one metal-comprising feature layer underlying said high-temperature organic-based masking material.
Claim 2
Independent Claim
86 words
A method for patterning semiconductor device features comprising the steps of: (a) transferring a pattern from a patterned photoresist layer through a layer of high-temperature inorganic masking material; (b) transferring the pattern from a multi-layered structure remaining after step (a) through an underlying layer of a high-temperature organic-based masking material; (c) removing any photoresist material which remains after step (b); and (d) transferring the pattern from the multi-layered structure present after step (c) through at least one metal-comprising feature layer underlying said high-temperature organic-based masking material.
Claim 3
Dependent Claim
25 words
The method of claim 1, including an additional step: (e) removing residual high-temperature organic-based masking layer material from a surface of said metal-comprising feature layer.
Claim 4
Dependent Claim
35 words
The method of claim 2, including an additional step: (f) applying a planarizing layer of an organic-based material having a dielectric constant which is advantageous for purposes of increasing the gate speed of a transistor.
Claim 5
Dependent Claim
30 words
The method of claim 1, including an additional step following step (c), said step comprising: (c-2) removing any portion of said high-temperature inorganic masking material which remains after step (c).
Claim 6
Dependent Claim
23 words
The method of claim 1, wherein said step (b) transfer through said high-temperature organic-based masking material is achieved using an anisotropic plasma etch.
Claim 7
Dependent Claim
25 words
The method of claim 1, wherein said step (c) removal of photoresist is achieved using an oxygen-based plasma in a manner which produces anisotropic etching.
Claim 8
Dependent Claim
20 words
The method of claim 1, wherein said step (d) pattern transfer is achieved in a manner which produces anisotropic etching.
Claim 9
Dependent Claim
34 words
The method of claim 1, wherein said at least one metal-comprising feature layer comprises a metal selected from the group consisting of copper, platinum, silver, gold, iridium, rubidium, ruthenium, tungsten, and barium strontium titanate.
Claim 10
Dependent Claim
24 words
The method of claim 8, wherein said at least one metal-comprising feature layer comprises copper, and said copper is etched using enhanced physical bombardment.
Claim 11
Dependent Claim
33 words
The method of claim 8, wherein said at least one metal-comprising feature layer comprises copper, and said copper is etched using a combination of enhanced physical bombardment with a chemically reactive ion component.
Claim 12
Independent Claim
37 words
The method of claims 8, wherein said at least one metal-comprising feature layer comprises copper, and said copper is etched using a chemistry selected from the group consisting of HCl chemistry, HBr chemistry, or a combination thereof.
Claim 13
Dependent Claim
28 words
The method of claim 7, wherein the thickness of said high-temperature inorganic masking material is designed so that this material is consumed during the step (d) pattern transfer.
Claim 14
Dependent Claim
21 words
The method of claim 2, wherein said high-temperature organic-based masking layer material is removed in a manner which produces anisotropic etching.
Claim 15
Dependent Claim
27 words
The method of claim 2, wherein said high-temperature organic-based masking layer material is removed using a combination of enhanced physical bombardment with a chemically reactive ion component.
Claim 16
Dependent Claim
31 words
The method of claim 2, wherein said high-temperature organic-based masking layer material is removed using a chemistry selected from the group consisting of HCl chemistry, HBr chemistry, or a combination thereof.
Claim 17
Dependent Claim
19 words
The method of claim 2, wherein said high-temperature organic-based masking layer material is removed using a wet stripping technique.
Claim 18
Dependent Claim
19 words
The method of claim 16, wherein said wet stripping technique passivates at least one surface of said feature layer.
Claim 19
Dependent Claim
25 words
The method of claim 1, including an additional step prior to step (a), wherein said high-temperature organic-based masking layer is deposited using a plasma-based technique.
Claim 20
Dependent Claim
26 words
The method of claim 1, including an additional step (x) prior to step (a), wherein said high-temperature organic-based masking layer is deposited using a CVD technique.
Claim 21
Independent Claim
88 words
A method for patterning semiconductor device features comprising the steps of: (a) developing an imaged layer of high-temperature imageable material into a pattern using a plasma etching technique, to produce a patterned mask which can be used to transfer a desired pattern through underlying layers; (b) transferring the pattern formed in step a) through an underlying layer of high-temperature organic-based masking material, and (c) transferring the pattern from the multi-layered structure present after step (b) through at least one metal-comprising feature layer underlying said high-temperature organic-based masking material.
Claim 22
Independent Claim
88 words
A method for patterning semiconductor device features comprising the steps of: (a) developing an imaged layer of high-temperature imageable material into a pattern using a plasma etching technique, to produce a patterned mask which can be used to transfer a desired pattern through underlying layers; (b) transferring the pattern formed in step a) through an underlying layer of high-temperature organic-based masking material, and (c) transferring the pattern from the multi-layered structure present after step (b) through at least one metal-comprising feature layer underlying said high-temperature organic-based masking material.
Claim 23
Dependent Claim
24 words
The method of claim 20, including an additional step: (d) removing residual high-temperature organic-based masking layer material from a surface of said feature layer.
Claim 24
Dependent Claim
35 words
The method of claim 21, including an additional step: (e) applying a planarizing layer of an organic-based material having a dielectric constant which is advantageous for purposes of increasing the gate speed of a transistor.
Claim 25
Dependent Claim
23 words
The method of claim 20, wherein said step (b) transfer through said high-temperature organic-based masking material is achieved using an anisotropic plasma etch.
Claim 26
Dependent Claim
22 words
The method of claim 21, wherein said step (d) masking layer material removal is achieved in a manner which produces anisotropic etching.
Claim 27
Dependent Claim
33 words
The method of claim 21, wherein at least one metal-comprising feature layer comprises a metal selected from the group consisting of copper, platinum, silver, gold, iridium, ribidium, ruthenium, tungsten, and barium strontium titanate.
Claim 28
Dependent Claim
24 words
The method of claim 25, wherein said at least one metal-comprising feature layer comprises copper, and said copper is etched using enhanced physical bombardment.
Claim 29
Dependent Claim
33 words
The method of claim 25, wherein said at least one metal-comprising feature layer comprises copper, and said copper is etched using a combination of enhanced physical bombardment with a chemically reactive ion component.
Claim 30
Dependent Claim
37 words
The method of claim 25, wherein said at least one metal-comprising feature layer comprises copper, and said copper is etched using a chemistry selected from the group consisting of HCl chemistry, HBr chemistry, or a combination thereof.
Claim 31
Dependent Claim
28 words
The method of claim 21, wherein the thickness of said high-temperature inorganic masking material is designed so that this material is consumed during the step (c) pattern transfer.
Claim 32
Dependent Claim
21 words
The method of claim 21, wherein said high-temperature organic-based masking layer material is removed in a manner which produces anisotropic etching.
Claim 33
Dependent Claim
27 words
The method of claim 21, wherein said high-temperature organic-based masking layer material is removed using a combination of enhanced physical bombardment with a chemically reactive ion component.
Claim 34
Dependent Claim
31 words
The method of claim 21, wherein said high-temperature organic-based masking layer material is removed using a chemistry selected from the group consisting of HCl chemistry, HBr chemistry, or a combination thereof.
Claim 35
Dependent Claim
19 words
The method of claim 21, wherein said high-temperature organic-based masking layer material is removed using a wet stripping technique.
Claim 36
Dependent Claim
19 words
The method of claim 33, wherein said wet stripping technique passivates at least one surface of said feature layer.
Claim 37
Dependent Claim
29 words
The method of claim 23, including an additional step (x) prior to step (a), wherein said high-temperature imageable material is material is deposited using a silane-based or TEOS-based chemistry.
Claim 38
Dependent Claim
26 words
The method of claim 35, including an additional step (y) prior to step (x), wherein said high-temperature organic-based masking layer is deposited using a plasma-based technique.
Claim 39
Dependent Claim
26 words
The method of claim 35, including an additional step (z) prior to step (x), wherein said high-temperature organic-based masking layer is deposited using a CVD technique.
References Cited (Backward Citations)
US4256534A
Cited
US4447824A
Cited
US4474642A
Cited
US4440804A
Cited
US4444618A
Cited
US4519872A
Cited
US4832788A
Cited
US5067002A
Cited
US4753709A
Cited
US4966865A
Cited
US4863557A
Cited
US5110712A
Cited
US5186718A
Cited
US5141817A
Cited
US5053105A
Cited
US5445710A
Cited
US5183972A
Cited
US5326431A
Cited
US5476753A
Cited
EP0531232A2
Cited
US5286344A
Cited
US5356511A
Cited
US5346586A
Cited
US5387556A
Cited
US5578166A
Cited
WO1996012297A2
Cited
US5550405A
Cited
US5559056A
Cited
US5880018A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-11-07 | 2004-05-08 | 2004-11-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-11-07 | 2008-05-08 | 2008-11-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-11-07 | 2012-05-08 | 2012-11-07 | $7700.00 | Window Closed / Lapsed |