EP0531232A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
High durability mask for use in selective area, epitaxial regrowth of GaAs
Assignee: Eastman Kodak Co
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Filing: 1992-08-13
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Granted: —
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Expires: 2012-08-13
Abstract
Abstract A durable mask is described which enables the fabrication of deep channels in GaAs suitable for refilling by Liquid Phase Epitaxy (LPE). The deep channels are fabricated by dry etch processing in chlorine containing ambients with sidewalls which do not undercut the mask. The mask consists of an amorphous form of carbon which may contain incorporated hydrogen. The mask which eliminates problems associated with selective area, epitaxial regrowth of GaAs employing mask undercut profiles can be applied, patterned, and removed through dry processing techniques.
Inventors
- 👤 Hans G. c/o EASTMAN KODAK COMPANY Franke
- 👤 Eric T. c/o EASTMAN KODAK COMPANY Prince
- 👤 David J. c/o EASTMAN KODAK COMPANY Lawrence
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 18:20
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/69; H10P50/691; H10P50/692; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3406; H10P14/3451; H10P14/3452; H10P14/3454
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
104 words
A method of forming a highly durable mask for use in the dry etch processing of GaAs, comprising the steps of: (a) providing a layer of amorphous carbon over the GaAs which is resistant to attack by chlorine on GaAs; (b) forming openings in the amorphous carbon layer to expose the GaAs or suitable overlayer by dry processing to form an amorphous mask; (c) dry etch processing of GaAs by chlorine containing ambients through the opening in the mask; (d) forming features with sidewalls which do not undercut the amorphous carbon mask; (e) regrowing of GaAs in such features; and (f) removing the mask.
Claim 2
Dependent Claim
12 words
The method of claim 1 wherein the amorphous carbon contains incorporated hydrogen.
Claim 3
Dependent Claim
13 words
The method of claim 1 wherein the mask is removed by dry processing.
Claim 4
Dependent Claim
15 words
The method of claim 1 wherein the regrowing step is by Liquid Phase Epitaxy (LPE).
Claim 5
Dependent Claim
45 words
A durable mask for use in the dry etch processing of GaAs by chlorine containing ambients, comprising: a layer of amorphous carbon over the GaAs resistant to attack by chlorine and having openings which expose the GaAs so that it can be etched by chlorine.
References Cited (Backward Citations)
No citation records indexed.
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