US6133068A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Increasing the gap between a lead frame and a semiconductor die
Assignee: Micron Technology Inc
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Filing: 1999-03-08
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Granted: 2000-10-17
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Expires: 2019-03-08
Abstract
Abstract Apparatus and method of increasing the distance of the gap between a lead frame and a semiconductor die surface in a package assembly. An adhesive layer and a gap increasing layer are disposed between the lead frame and the semiconductor die surface. The gap increasing layer has a thickness selected to reduce likelihood of package particles from being trapped between the lead frame and the die surface. The gap increasing layer includes silver plating, and has a thickness of at least about 300 to 500 microinches.
Inventors
- 👤 Larry D. Kinsman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 11:02
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/40; H10W70/411; H10W70/415; H10W70/421; H10W70/424; H10W72/00; H10W72/50; H10W72/541; H10W72/547; H10W72/5473; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W72/851; H10W72/853; H10W72/865; H10W72/90; H10W72/931; H10W72/932; H10W74/00; H10W90/00; H10W90/701; H10W90/731; H10W90/736
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
92 words
A method of manufacturing a semiconductor package assembly, the method comprising: disposing an adhesive layer between a portion of an active surface of a semiconductor die and a lead frame member such that a gap is defined by surfaces of the semiconductor die and the lead frame member and an edge of the adhesive layer; and disposing a gap increasing layer of a predetermined thickness between the adhesive layer and a lead frame member extending over the die active surface to reduce the likelihood of package particles being trapped in the gap.
Claim 2
Independent Claim
92 words
A method of manufacturing a semiconductor package assembly, the method comprising: disposing an adhesive layer between a portion of an active surface of a semiconductor die and a lead frame member such that a gap is defined by surfaces of the semiconductor die and the lead frame member and an edge of the adhesive layer; and disposing a gap increasing layer of a predetermined thickness between the adhesive layer and a lead frame member extending over the die active surface to reduce the likelihood of package particles being trapped in the gap.
Claim 3
Dependent Claim
18 words
The method of claim 1, wherein the disposing includes spot plating a metal to the lead frame member.
Claim 4
Dependent Claim
10 words
The method of claim 2, wherein the metal includes silver.
Claim 5
Dependent Claim
19 words
The method of claim 1, wherein the disposing includes disposing a gap increasing layer of at least 300 microinches.
Claim 6
Dependent Claim
19 words
The method of claim 1, wherein the disposing includes disposing a gap increasing layer of at least 500 microinches.
Claim 7
Independent Claim
73 words
A method of manufacturing a semiconductor device, comprising: attaching an adhesive layer to a portion of an active surface of a semiconductor die; and forming a gap increasing layer to space a lead frame member sufficiently above the die active surface that the likelihood that particles will be trapped in a gap defined by a surface of the lead frame, the die active surface, and an edge of the adhesive layer is reduced.
Claim 8
Independent Claim
73 words
A method of manufacturing a semiconductor device, comprising: attaching an adhesive layer to a portion of an active surface of a semiconductor die; and forming a gap increasing layer to space a lead frame member sufficiently above the die active surface that the likelihood that particles will be trapped in a gap defined by a surface of the lead frame, the die active surface, and an edge of the adhesive layer is reduced.
Claim 9
Dependent Claim
18 words
The method of claim 6, wherein the forming includes spot plating a metal to the lead frame member.
Claim 10
Dependent Claim
10 words
The method of claim 7, wherein the metal includes silver.
Claim 11
Dependent Claim
19 words
The method of claim 6, wherein the forming includes forming a gap increasing layer of at least 300 microinches.
Claim 12
Dependent Claim
19 words
The method of claim 6, wherein the forming includes forming a gap increasing layer of at least 500 microinches.
Claim 13
Independent Claim
86 words
A method of fabricating a semiconductor device, comprising: encapsulating a die and lead frame with a material having filler particles of one or more sizes; attaching the die and lead frame using an adhesive layer such that a gap is formed between surfaces of the die and lead frame and an edge of the adhesive layer; and disposing a second layer between the lead frame and die to increase the gap by a predetermined thickness to reduce likelihood of trapped encapsulant filler particles in the gap.
Claim 14
Independent Claim
86 words
A method of fabricating a semiconductor device, comprising: encapsulating a die and lead frame with a material having filler particles of one or more sizes; attaching the die and lead frame using an adhesive layer such that a gap is formed between surfaces of the die and lead frame and an edge of the adhesive layer; and disposing a second layer between the lead frame and die to increase the gap by a predetermined thickness to reduce likelihood of trapped encapsulant filler particles in the gap.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-10-17 | 2004-04-17 | 2004-10-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-17 | 2008-04-17 | 2008-10-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-17 | 2012-04-17 | 2012-10-17 | $7700.00 | Window Closed / Lapsed |