US6005286A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Increasing the gap between a lead frame and a semiconductor die
Assignee: Micron Technology Inc
•
Filing: 1997-10-06
•
Granted: 1999-12-21
•
Expires: 2017-10-06
Abstract
Abstract Apparatus and method of increasing the distance of the gap between a lead frame and a semiconductor die surface in a package assembly. An adhesive layer and a gap increasing layer are disposed between the lead frame and the semiconductor die surface. The gap increasing layer has a thickness selected to reduce likelihood of package particles from being trapped between the lead frame and the die surface. The gap increasing layer includes silver plating, and has a thickness of at least about 300 to 500 microinches.
Inventors
- 👤 Larry D. Kinsman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 11:25
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/40; H10W70/411; H10W70/415; H10W70/421; H10W70/424; H10W72/00; H10W72/50; H10W72/541; H10W72/547; H10W72/5473; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W72/851; H10W72/853; H10W72/865; H10W72/90; H10W72/931; H10W72/932; H10W74/00; H10W90/00; H10W90/701; H10W90/731; H10W90/736
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
132 words
A semiconductor die assembly containing a material having particles, comprising: a die having an active surface; a lead frame extending over the die active surface; an adhesive layer defined by boundary edges and disposed between a portion of the die active surface and a surface of the lead frame, a gap defined by the die active surface, the surface of the lead frame, and a boundary edge of the adhesive layer; and a gap increasing layer disposed between the die active surface and the lead frame to increase the gap by a predetermined thickness to reduce likelihood of trapped particles in the gap, the gap increasing layer defined by boundary edges, wherein the boundary edges of the gap increasing layer are substantially at or within the boundary edges of the adhesive layer.
Claim 2
Dependent Claim
132 words
A semiconductor die assembly containing a material having particles, comprising: a die having an active surface; a lead frame extending over the die active surface; an adhesive layer defined by boundary edges and disposed between a portion of the die active surface and a surface of the lead frame, a gap defined by the die active surface, the surface of the lead frame, and a boundary edge of the adhesive layer; and a gap increasing layer disposed between the die active surface and the lead frame to increase the gap by a predetermined thickness to reduce likelihood of trapped particles in the gap, the gap increasing layer defined by boundary edges, wherein the boundary edges of the gap increasing layer are substantially at or within the boundary edges of the adhesive layer.
Claim 3
Dependent Claim
21 words
The semiconductor die assembly of claim 1, wherein the gap increasing layer has a thickness of at least about 300 microinches.
Claim 4
Dependent Claim
21 words
The semiconductor die assembly of claim 1, wherein the gap increasing layer has a thickness of at least about 500 microinches.
Claim 5
Dependent Claim
14 words
The semiconductor die assembly of claim 1, wherein the gap increasing layer includes silver.
Claim 6
Dependent Claim
14 words
The semiconductor die assembly of claim 1, wherein the gap increasing layer includes polyimide.
Claim 7
Dependent Claim
14 words
The semiconductor die assembly of claim 1, wherein the gap increasing layer includes epoxy.
Claim 8
Dependent Claim
14 words
The semiconductor die assembly of claim 1, wherein the gap increasing layer includes gold.
Claim 9
Dependent Claim
16 words
The semiconductor die assembly of claim 1, wherein the gap increasing layer includes a tin/lead composition.
Claim 10
Dependent Claim
14 words
The semiconductor die assembly of claim 1 wherein the die includes a leads-over-chip die.
Claim 11
Dependent Claim
20 words
The semiconductor die assembly of claim 4, wherein the silver is spot plated to a portion of the lead frame.
Claim 12
Dependent Claim
22 words
The semiconductor die assembly of claim 4, wherein the silver gap increasing layer has a thickness of at least about 300 microinches.
Claim 13
Dependent Claim
22 words
The semiconductor die assembly of claim 4, wherein the silver gap increasing layer has a thickness of at least about 500 microinches.
Claim 14
Dependent Claim
93 words
A semiconductor device, comprising: an encapsulant material having particles; a die having an active surface; a lead frame having lead members extending over the active die surface; an adhesive layer attached to portions of the active die surface, gaps being defined by the die active surface portions, surfaces of the lead members and edge portions of the adhesive layer; and a plurality of gap increasing layers formed between the lead members and the adhesive layer to increase thicknesses of the gaps by predetermined amounts to reduce likelihood of trapped particles in the gaps.
Claim 15
Dependent Claim
93 words
A semiconductor device, comprising: an encapsulant material having particles; a die having an active surface; a lead frame having lead members extending over the active die surface; an adhesive layer attached to portions of the active die surface, gaps being defined by the die active surface portions, surfaces of the lead members and edge portions of the adhesive layer; and a plurality of gap increasing layers formed between the lead members and the adhesive layer to increase thicknesses of the gaps by predetermined amounts to reduce likelihood of trapped particles in the gaps.
Claim 16
Dependent Claim
13 words
The semiconductor device of claim 13, wherein the gap increasing layers include silver.
Claim 17
Dependent Claim
18 words
The semiconductor device of claim 14, wherein the silver is spot plated to portions of the lead members.
Claim 18
Dependent Claim
98 words
Apparatus for increasing the distance of a gap between a semiconductor die surface and an attached lead frame in a device containing encapsulant particles of one or more sizes, comprising: a first layer attached to the semiconductor die surface, the gap being defined by surfaces of the die and the lead frame and an edge of the first layer; and a second layer disposed between the lead frame and the first layer, the second layer having a predetermined thickness to reduce the likelihood of trapped encapsulant particles between the lead frame and the semiconductor die in the gap.
Claim 19
Dependent Claim
98 words
Apparatus for increasing the distance of a gap between a semiconductor die surface and an attached lead frame in a device containing encapsulant particles of one or more sizes, comprising: a first layer attached to the semiconductor die surface, the gap being defined by surfaces of the die and the lead frame and an edge of the first layer; and a second layer disposed between the lead frame and the first layer, the second layer having a predetermined thickness to reduce the likelihood of trapped encapsulant particles between the lead frame and the semiconductor die in the gap.
Claim 20
Dependent Claim
12 words
The apparatus of claim 16, wherein the second layer includes silver plating.
Claim 21
Dependent Claim
12 words
The apparatus of claim 16, wherein the first layer includes an adhesive.
Claim 22
Dependent Claim
18 words
The apparatus of claim 16, wherein the thickness of the second layer is at least about 300 microinches.
Claim 23
Dependent Claim
117 words
A semiconductor package assembly, comprising: a semiconductor die having an active surface; a lead frame attached to the semiconductor die; an adhesive layer disposed between the die active surface and the lead frame, a gap defined by the die active surface, a surface of the lead frame, and an edge of the adhesive layer; a gap increasing layer disposed between the die active surface and the lead frame; and a mold compound encapsulating the assembly of the semiconductor die, the lead frame, the adhesive layer and the gap increasing layer, the mold compound having particles, wherein the gap increasing layer has a predetermined thickness to reduce the likelihood of mold compound particles being trapped in the gap.
Claim 24
Dependent Claim
117 words
A semiconductor package assembly, comprising: a semiconductor die having an active surface; a lead frame attached to the semiconductor die; an adhesive layer disposed between the die active surface and the lead frame, a gap defined by the die active surface, a surface of the lead frame, and an edge of the adhesive layer; a gap increasing layer disposed between the die active surface and the lead frame; and a mold compound encapsulating the assembly of the semiconductor die, the lead frame, the adhesive layer and the gap increasing layer, the mold compound having particles, wherein the gap increasing layer has a predetermined thickness to reduce the likelihood of mold compound particles being trapped in the gap.
Claim 25
Dependent Claim
15 words
The semiconductor package assembly of claim 20, wherein the gap increasing layer includes silver plating.
Claim 26
Dependent Claim
21 words
The semiconductor package assembly of claim 20, wherein the thickness of the gap increasing layer is at least about 300 microinches.
Claim 27
Dependent Claim
21 words
The semiconductor package assembly of claim 20, wherein the thickness of the gap increasing layer is at least about 500 microinches.
Claim 28
Independent Claim
63 words
A device comprising: a die; a lead frame portion over the die; an adhesive layer between the die and the lead frame portion; and a second layer spot-plated to the lead frame portion to increase a distance between the die and lead frame by a predetermined amount, wherein the lead frame includes a first material and the second layer includes the first material.
Claim 29
Independent Claim
63 words
A device comprising: a die; a lead frame portion over the die; an adhesive layer between the die and the lead frame portion; and a second layer spot-plated to the lead frame portion to increase a distance between the die and lead frame by a predetermined amount, wherein the lead frame includes a first material and the second layer includes the first material.
Claim 30
Dependent Claim
11 words
The device of claim 24, wherein the second layer includes silver.
Claim 31
Independent Claim
74 words
A device, comprising: a die having a surface; a lead frame extending over the die surface; an adhesive layer disposed between the lead frame and the die surface, a gap defined by the surface of the die, a surface of the lead frame, and an edge of the adhesive layer; and a second layer having a predetermined thickness to increase a thickness of the gap to reduce likelihood of trapped particles in the gap.
Claim 32
Independent Claim
74 words
A device, comprising: a die having a surface; a lead frame extending over the die surface; an adhesive layer disposed between the lead frame and the die surface, a gap defined by the surface of the die, a surface of the lead frame, and an edge of the adhesive layer; and a second layer having a predetermined thickness to increase a thickness of the gap to reduce likelihood of trapped particles in the gap.
References Cited (Backward Citations)
US4984059A
Cited
US5714405A
Cited
US5260234A
Cited
US5436410A
Cited
JPH0629335A
Cited
US5311057A
Cited
US5585600A
Cited
US5677566A
Cited
US5789803A
Cited
US5834830A
Cited
US5804874A
Cited
US5817540A
Cited
US5923081A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-12-20 | 2003-06-21 | 2003-12-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-12-20 | 2007-06-21 | 2007-12-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-12-20 | 2011-06-21 | 2011-12-21 | $7700.00 | Window Closed / Lapsed |