US6100186A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of selectively forming a contact in a contact hole
Assignee: Micron Technology Inc
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Filing: 1998-04-14
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Granted: 2000-08-08
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Expires: 2018-04-14
Abstract
Abstract A contact is selectively formed in a contact hole in an insulating layer deposited on a silicon substrate. The contact hole exposes a portion of the substrate. The contact is formed by selectively forming a first layer of titanium silicide in the contact hole on the exposed portion of the substrate. A layer of titanium nitride is then selectively formed on the first layer of titanium silicide. A second layer of titanium silicide is thereafter selectively formed on the layer of titanium nitride to form the contact.
Inventors
- 👤 Chris W. Hill
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 08:53
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/047; H10W20/048; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10W20/033; H10W20/056; H10W20/057; H10W20/036
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
86 words
A method for selectively forming a contact in a contact hole formed in an insulating layer deposited on a silicon substrate, the contact hole exposing a portion of the substrate, comprising the steps of: selectively forming a first layer of titanium silicide in the contact hole on the exposed portion of the substrate; selectively forming a layer of titanium nitride on the first layer of titanium silicide; and selectively forming a second layer of titanium silicide in the contact hole on the layer of titanium nitride.
Claim 2
Independent Claim
86 words
A method for selectively forming a contact in a contact hole formed in an insulating layer deposited on a silicon substrate, the contact hole exposing a portion of the substrate, comprising the steps of: selectively forming a first layer of titanium silicide in the contact hole on the exposed portion of the substrate; selectively forming a layer of titanium nitride on the first layer of titanium silicide; and selectively forming a second layer of titanium silicide in the contact hole on the layer of titanium nitride.
Claim 3
Dependent Claim
29 words
The method of claim 1 wherein the first layer of titanium silicide has a thickness that is substantially less than a thickness of the second layer of titanium silicide.
Claim 4
Dependent Claim
49 words
The method of claim 1 wherein the first layer of titanium silicide has a thickness such that the silicon consumed from the substrate during formation of the first layer of titanium silicide is less than a depth of a doped region formed in the substrate under the contact hole.
Claim 5
Dependent Claim
37 words
The method of claim 1 wherein the step of forming a first layer of titanium silicide includes the step of forming a first layer of titanium silicide having a thickness ranging from approximately 200 to 1000 angstroms.
Claim 6
Dependent Claim
22 words
The method of claim 1 wherein the insulating layer is an oxide layer having a thickness ranging from one to two microns.
Claim 7
Dependent Claim
18 words
The method of claim 1 wherein the first layer of titanium silicide is deposited through chemical vapor deposition.
Claim 8
Dependent Claim
22 words
The method of claim 6 wherein the chemical vapor deposition process includes titanium tetrachloride (TiCl 4 ) and silane (SiH 4 ).
Claim 9
Dependent Claim
19 words
The method of claim 1 wherein the layer of titanium nitride is formed using a nitrogen source and heat.
Claim 10
Dependent Claim
14 words
The method of claim 8 wherein the nitrogen source is ammonia (NH 3 ).
Claim 11
Dependent Claim
21 words
The method of claim 1 wherein the layer of titanium nitride has a thickness ranging from approximately 100 to 500 angstroms.
Claim 12
Dependent Claim
18 words
The method of claim 1 wherein the second layer of titanium silicide is deposited through chemical vapor deposition.
Claim 13
Dependent Claim
22 words
The method of claim 1 wherein the chemical vapor deposition process includes titanium tetrachloride (TiCl 4 ) and silane (SiH 4 ).
Claim 14
Independent Claim
102 words
A method for selectively forming a contact in a contact hole formed in an insulating layer deposited on a silicon substrate, the contact hole exposing a portion of the substrate, comprising the steps of: selectively forming a first layer of titanium silicide in the contact hole on the exposed portion of the substrate; selectively forming a layer of titanium nitride on the first layer of titanium silicide; selectively forming a second layer of titanium silicide in the contact hole on the layer of titanium nitride; and forming a metal layer on the second layer of titanium silicide and on the insulating layer.
Claim 15
Independent Claim
102 words
A method for selectively forming a contact in a contact hole formed in an insulating layer deposited on a silicon substrate, the contact hole exposing a portion of the substrate, comprising the steps of: selectively forming a first layer of titanium silicide in the contact hole on the exposed portion of the substrate; selectively forming a layer of titanium nitride on the first layer of titanium silicide; selectively forming a second layer of titanium silicide in the contact hole on the layer of titanium nitride; and forming a metal layer on the second layer of titanium silicide and on the insulating layer.
Claim 16
Dependent Claim
13 words
The method of claim 13 wherein the metal layer is an aluminum layer.
Claim 17
Dependent Claim
29 words
The method of claim 13 wherein the first layer of titanium silicide has a thickness that is substantially less than a thickness of the second layer of titanium silicide.
Claim 18
Dependent Claim
37 words
The method of claim 13 wherein the step of forming a first layer of titanium silicide includes the step of forming a first layer of titanium silicide having a thickness ranging from approximately 200 to 1000 angstroms.
Claim 19
Dependent Claim
49 words
The method of claim 13 wherein the first layer of titanium silicide has a thickness such that the silicon consumed from the substrate during formation of the first layer of titanium silicide is less than a depth of a doped region formed in the substrate under the contact hole.
Claim 20
Dependent Claim
22 words
The method of claim 13 wherein the insulating layer is an oxide layer having a thickness ranging from one to two microns.
Claim 21
Dependent Claim
18 words
The method of claim 13 wherein the first layer of titanium silicide is deposited through chemical vapor deposition.
Claim 22
Dependent Claim
22 words
The method of claim 13 wherein the chemical vapor deposition process includes titanium tetrachloride (TiCl 4 ) and silane (SiH 4 ).
Claim 23
Dependent Claim
21 words
The method of claim 13 wherein the layer of titanium nitride has a thickness ranging from approximately 100 to 500 angstroms.
Claim 24
Dependent Claim
19 words
The method of claim 13 wherein the layer of titanium nitride is formed using a nitrogen source and heat.
Claim 25
Dependent Claim
14 words
The method of claim 22 wherein the nitrogen source is ammonia (NH 3 ).
Claim 26
Dependent Claim
18 words
The method of claim 13 wherein the second layer of titanium silicide is deposited through chemical vapor deposition.
Claim 27
Dependent Claim
22 words
The method of claim 24 wherein the chemical vapor deposition process includes titanium tetrachloride (TiCl 4 ) and silane (SiH 4 ).
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-08-08 | 2004-02-07 | 2004-08-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-08-08 | 2008-02-07 | 2008-08-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-08-08 | 2012-02-07 | 2012-08-08 | $7700.00 | Window Closed / Lapsed |