US4998157A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ohmic contact to silicon substrate
Assignee: Seiko Epson Corp
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Filing: 1989-08-01
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Granted: 1991-03-05
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Expires: 2009-08-01
Abstract
Abstract In a semiconductor device including a substrate of Si or polycrystalline silicon and an interlayer insulation film region, a region for interconnection with the substrate is composed of a refractory metal silicide layer, a refractory metal nitride layer, an Al or Al alloy layer, and possibly a further refractory metal nitride layer, while a region for interconnection on the interlayer insulation film on the substrate is composed of a refractory metal, or refractory metal oxide layer, a refractory metal nitride layer, an Al or Al alloy layer, and possibly a further refractory metal nitride layer, providing interconnections for integrated circuits. In the manufacture of this interconnection structure, rapid thermal annealing is performed at 600°-1000° C. on the refractory metal nitride layer of the region for interconnection with the substrate, followed by the formation of Al or Al alloy layer.
Inventors
- 👤 Kenji Yokoyama
- 👤 Juri Kato
- 👤 Masashi Ogita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:40
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/047; H10W20/048; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/01125; H10D64/025; H10W20/033; H10W20/071; H10W20/081; H10W20/40; H10W20/41; H10W20/425; Y; Y10; Y10S; Y10S148/00; Y10S148/019
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
145 words
In a semiconductor device composed of a silicon-containing substrate and an insulation film disposed on the substrate and having at least one opening at which the substrate is exposed, the improvement comprising an interconnection structure composed of: a first layer contacting said insulation layer and said substrate within the opening; a second layer of a refractory metal nitride disposed on said first layer; and a conductive body of aluminum or an aluminum alloy disposed on said second layer; wherein said interconnection structure is constituted by a first region where said first layer contacts said substrate and a second region where said first layer contacts said insulation film, said first layer is composed of a refractory metal silicide in said first region and a refractory metal in said second region and said second layer contains oxygen atoms across the entirety of said first and second regions.
Claim 2
Dependent Claim
145 words
In a semiconductor device composed of a silicon-containing substrate and an insulation film disposed on the substrate and having at least one opening at which the substrate is exposed, the improvement comprising an interconnection structure composed of: a first layer contacting said insulation layer and said substrate within the opening; a second layer of a refractory metal nitride disposed on said first layer; and a conductive body of aluminum or an aluminum alloy disposed on said second layer; wherein said interconnection structure is constituted by a first region where said first layer contacts said substrate and a second region where said first layer contacts said insulation film, said first layer is composed of a refractory metal silicide in said first region and a refractory metal in said second region and said second layer contains oxygen atoms across the entirety of said first and second regions.
Claim 3
Dependent Claim
19 words
A semiconductor device as defined in claim 1 wherein said second layer contains Si atoms in said first region.
Claim 4
Dependent Claim
19 words
A semiconductor device as defined in claim 1 wherein said second layer contains Si atoms in said first region.
Claim 5
Dependent Claim
27 words
A semiconductor device as defined in claim 1 wherein said interconnection structure further comprises a third layer of a refractory metal nitride disposed on said conductive body.
Claim 6
Dependent Claim
19 words
A semiconductor device as defined in claim 4 wherein said second layer contains Si atoms in said first region.
Claim 7
Dependent Claim
27 words
A semiconductor device as defined in claim 1 wherein said interconnection structure further comprises a third layer of a refractory metal nitride disposed on said conductive body.
Claim 8
Dependent Claim
19 words
A semiconductor device as defined in claim 6 wherein said second layer contains Si atoms in said first region.
Claim 9
Dependent Claim
18 words
A semiconductor device as defined in claim 1 where said opening has a diameter not greater than 1μ.
Claim 10
Dependent Claim
146 words
In a semiconductor device composed of a silicon-containing substrate and an insulation film disposed on the substrate and having at least one opening at which the substrate is exposed, the improvement comprising an interconnection structure composed of: a first layer contacting said insulation layer and said substrate within the opening; a second layer of a refractory metal nitride disposed on said first layer; and a conductive body of aluminum or an aluminum alloy disposed on said second layer; wherein said interconnection structure is constituted by a first region where said first layer contacts said substrate and a second region where said first layer contacts said insulation film, said first layer is composed of a refractory metal silicide in said first region and a refractory metal oxide in said second region and said second layer contains oxygen atoms across the entirety of said first and second regions.
Claim 11
Dependent Claim
146 words
In a semiconductor device composed of a silicon-containing substrate and an insulation film disposed on the substrate and having at least one opening at which the substrate is exposed, the improvement comprising an interconnection structure composed of: a first layer contacting said insulation layer and said substrate within the opening; a second layer of a refractory metal nitride disposed on said first layer; and a conductive body of aluminum or an aluminum alloy disposed on said second layer; wherein said interconnection structure is constituted by a first region where said first layer contacts said substrate and a second region where said first layer contacts said insulation film, said first layer is composed of a refractory metal silicide in said first region and a refractory metal oxide in said second region and said second layer contains oxygen atoms across the entirety of said first and second regions.
Claim 12
Dependent Claim
19 words
A semiconductor device as defined in claim 9 wherein said second layer contains Si atoms in said first region.
Claim 13
Dependent Claim
19 words
A semiconductor device as defined in claim 9 wherein said second layer contains Si atoms in said first region.
Claim 14
Dependent Claim
27 words
A semiconductor device as defined in claim 9 wherein said interconnection structure further comprises a third layer of a refractory metal nitride disposed on said conductive body.
Claim 15
Dependent Claim
19 words
A semiconductor device as defined in claim 12 wherein said second layer contains Si atoms in said first region.
Claim 16
Dependent Claim
27 words
A semiconductor device as defined in claim 9 wherein said interconnection structure further comprises a third layer of a refractory metal nitride disposed on said conductive body.
Claim 17
Dependent Claim
19 words
A semiconductor device as defined in claim 14 wherein said second layer contains Si atoms in said first region.
Claim 18
Dependent Claim
18 words
A semiconductor device as defined in claim 9 where said opening has a diameter not greater than 1μ.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-03-04 | 1994-09-03 | 1995-03-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-03-04 | 1998-09-03 | 1999-03-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-03-04 | 2002-09-03 | 2003-03-05 | $7700.00 | Window Closed / Lapsed |