Method of selectively making contact structures both with barrier metal and without barrier metal in a single process flow

Claim 1

A method of fabricating an interconnection for a semiconductor structure including a semiconductor body having a major surface with a plurality of contact regions in said body and abutting said surface, said method comprising the steps of providing a semiconductor body having a major surface, forming an insulative layer over said major surface, forming a plurality of openings through said insulative layer thereby exposing areas of said surface, selectively forming a first layer of photo resist material over said insulative layer and exposing selected contact regions, implanting ions in said selected contact regions, removing said first layer of photo resist material, forming a first layer of conductive material over said insulative layer and said contact regions, selectively forming a second layer of photo resist material on said first layer of conductive material over said selected contact regions, removing exposed portions of said first layer of conductive material, and forming a second layer of conductive material over said insulative layer in contact with said first layer of conductive material over said selected contact regions and in contact with said major surface over other contact regions.

Claim 2

A method of fabricating an interconnection for a semiconductor structure including a semiconductor body having a major surface with a plurality of contact regions in said body and abutting said surface, said method comprising the steps of providing a semiconductor body having a major surface, forming an insulative layer over said major surface, forming a plurality of openings through said insulative layer thereby exposing areas of said surface, selectively forming a first layer of photo resist material over said insulative layer and exposing selected contact regions, implanting ions in said selected contact regions, removing said first layer of photo resist material, forming a first layer of conductive material over said insulative layer and said contact regions, selectively forming a second layer of photo resist material on said first layer of conductive material over said selected contact regions, removing exposed portions of said first layer of conductive material, and forming a second layer of conductive material over said insulative layer in contact with said first layer of conductive material over said selected contact regions and in contact with said major surface over other contact regions.

Claim 3

A method of fabricating an interconnection for a semiconductor structure including a semiconductor body having a major surface with a plurality of contact regions in said body and abutting said surface, said method comprising the steps of providing a semiconductor body having a major surface, forming an insulative layer over said major surface, removing a portion of said insulative layer thereby exposing said major surface over at least one selected contact region, implanting ions into said at least one selected contact region, forming a first conductive layer over said insulative layer and said at least one contact region, removing said first conductive layer and said insulating layer from at least one additional contact region, forming a second conductive layer over said first conductive layer and said at least one additional contact region, and selectively removing said first conductive layer and said second conductive layer thereby forming contacts to said at least one contact region and said at least one additional contact region.

Claim 4

A method of fabricating an interconnection for a semiconductor structure including a semiconductor body having a major surface with a plurality of contact regions in said body and abutting said surface, said method comprising the steps of providing a semiconductor body having a major surface, forming an insulative layer over said major surface, removing a portion of said insulative layer thereby exposing said major surface over at least one selected contact region, implanting ions into said at least one selected contact region, forming a first conductive layer over said insulative layer and said at least one contact region, removing said first conductive layer and said insulating layer from at least one additional contact region, forming a second conductive layer over said first conductive layer and said at least one additional contact region, and selectively removing said first conductive layer and said second conductive layer thereby forming contacts to said at least one contact region and said at least one additional contact region.