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US3669730A Expired / Lapsed US ⏱️ 0.0 years remaining

Modifying barrier layer devices

Assignee: Berkeley Heights
•
Filing: 1970-04-24
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Granted: 1972-06-13
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Expires: 1990-04-24
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Abstract

Abstract A METHOD IS DESCRIBED FOR PRODUCING SURFACE BARRIER DIODES WITH PREDETERMINED BARRIER HEIGHTS. AT LEAST TWO METALS ARE MIXED IN A PREDETERMINED PROPORTION AND DEPOSITED ON A SILICON SUBSTRATE. SUFFICIENT HEAT IS APPLIED TO CAUSE THE METALS TO REACT WITH THE SUBSTRATE, FORMING A MIXED METAL SILICIDE REGION. BY VARYING THE PROPORTIONS OF THE METALS A DESIRED BARRIER HEIGHT CAN BE ACHEIVED.

Inventors

  • 👤 Martin Paul Lepselter

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-25 02:28
CPC Classifications
H; H10; H10D; H10D99/00; H10D64/00; H10D64/60; H10D64/64; H10P; H10P95/00

Claims Analysis

Total Claims: 0
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References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1975-06-13 1975-12-13 1976-06-13 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1979-06-13 1979-12-13 1980-06-13 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1983-06-13 1983-12-13 1984-06-13 $7700.00 Window Closed / Lapsed

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