US5776830A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for fabricating connection structures
Assignee: Sony Corp
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Filing: 1997-10-09
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Granted: 1998-07-07
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Expires: 2017-10-09
Abstract
Abstract The present invention provides a process for fabricating a connection structure comprising a anti-reaction layer having excellent barrier properties and having improved ohmic characteristics with respect to the semiconductor substrate. Accordingly, the present invention comprises forming a first anti-reaction layer by temporarily ceasing the film deposition, and then initiating the film deposition again to form a second anti-reaction layer on the surface of the previously deposited first anti-reaction layer. A heat treatment can be applied to the structure after depositing a anti-reaction layer.
Inventors
- 👤 Hirofumi Sumi
- 👤 Keiichi Maeda
- 👤 Yukiyasu Sugano
- 👤 Kazuhide Koyama
- 👤 Mitsuru Taguchi
- 👤 Kazuhiro Hoshino
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 13:30
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/01125; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/047; H10W20/048
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
162 words
A process for fabricating a connection structure for a semiconductor, wherein the semiconductor provides a contact hole through an insulator film to a semiconductor substrate, having an anti-reaction layer formed on side walls and a bottom of said contact hole, consisting of the steps of: depositing a first anti-reaction layer onto said semiconductor substrate within said contact hole by using a film deposition process including generating a plasma; temporarily ceasing the generating of the plasma; resuming the generating of the plasma again, without changing deposition process conditions to define the first anti-reaction layer having a first pattern of grain boundaries to form a second anti-reaction layer on the surface of the previously deposited first anti-reaction layer having a second pattern of grain boundaries discontinuous from said first pattern; and then subjecting the first and second anti-reaction layers to heat treatment which is performed under an inert gas atmosphere containing oxygen or in air only after the deposition of the second anti-reaction layer.
Claim 2
Dependent Claim
162 words
A process for fabricating a connection structure for a semiconductor, wherein the semiconductor provides a contact hole through an insulator film to a semiconductor substrate, having an anti-reaction layer formed on side walls and a bottom of said contact hole, consisting of the steps of: depositing a first anti-reaction layer onto said semiconductor substrate within said contact hole by using a film deposition process including generating a plasma; temporarily ceasing the generating of the plasma; resuming the generating of the plasma again, without changing deposition process conditions to define the first anti-reaction layer having a first pattern of grain boundaries to form a second anti-reaction layer on the surface of the previously deposited first anti-reaction layer having a second pattern of grain boundaries discontinuous from said first pattern; and then subjecting the first and second anti-reaction layers to heat treatment which is performed under an inert gas atmosphere containing oxygen or in air only after the deposition of the second anti-reaction layer.
Claim 3
Dependent Claim
19 words
The process according to claim 1, wherein said heat treatment is performed within a temperature range of 400°-600° C.
Claim 4
Dependent Claim
15 words
The process according to claim 1, wherein said heat treatment is conducted at 500° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-07-06 | 2002-01-05 | 2002-07-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-07-06 | 2006-01-05 | 2006-07-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-07-06 | 2010-01-05 | 2010-07-07 | $7700.00 | Window Closed / Lapsed |