US5236869A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing semiconductor device
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1992-02-10
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Granted: 1993-08-17
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Expires: 2012-02-10
Abstract
Abstract The surface of a barrier layer interposed between a silicon substrate and aluminum wiring connected thereto is oxidized by heat treatment at 350° to 450° C. in an atmosphere having substantially the same composition as that of air or immersion in an oxidizing chemical to form an oxide film on the surface, and a wiring layer is then formed thereon. The presence of the oxide film inhibits interdiffusion between the silicon substrate and the aluminum wiring and reaction between the aluminum wiring and the barrier layer. Since this oxide film is formed by oxidation at the atmospheric pressure, the oxide film is not excessively oxidized even if it is exposed in air at a relatively high temperature of about 300° C. The oxide film having a thickness and properties which produce the tunnel effect can be formed with good reproducibility.
Inventors
- 👤 Hideo Takagi
- 👤 Akihiro Yoshida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 04:36
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/44; H10P95/00; H10W20/40; H10W20/41; H10W20/425; Y; Y10; Y10S; Y10S148/00; Y10S148/147
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
99 words
A method of producing a semiconductor device comprising the steps of: forming, on a surface of a semiconductor substrate, a barrier layer of at least one metal; forming an oxide film having a thickness which produces the tunnel effect on the surface of said barrier layer by heating said barrier layer in an atmosphere at about atmospheric pressure and having an oxygen concentration of 20±5% and a nitrogen concentration of 80±5%; and depositing a conductive layer selected from a group consisting of aluminum, aluminum alloys, tungsten, gold and copper on said barrier layer having said oxide film formed thereon.
Claim 2
Independent Claim
99 words
A method of producing a semiconductor device comprising the steps of: forming, on a surface of a semiconductor substrate, a barrier layer of at least one metal; forming an oxide film having a thickness which produces the tunnel effect on the surface of said barrier layer by heating said barrier layer in an atmosphere at about atmospheric pressure and having an oxygen concentration of 20±5% and a nitrogen concentration of 80±5%; and depositing a conductive layer selected from a group consisting of aluminum, aluminum alloys, tungsten, gold and copper on said barrier layer having said oxide film formed thereon.
Claim 3
Independent Claim
83 words
A method of producing a semiconductor device comprising the steps of: forming, on a surface of a semiconductor substrate, a barrier layer of at least one metal; forming an oxide film having a thickness which produces the tunnel effect on the surface of said barrier layer by immersing said barrier layer in an oxidizing chemical; and depositing a conductive layer selected from a group consisting of aluminum, aluminum alloys, tungsten, gold and copper on said barrier layer having said oxide film formed thereon.
Claim 4
Independent Claim
83 words
A method of producing a semiconductor device comprising the steps of: forming, on a surface of a semiconductor substrate, a barrier layer of at least one metal; forming an oxide film having a thickness which produces the tunnel effect on the surface of said barrier layer by immersing said barrier layer in an oxidizing chemical; and depositing a conductive layer selected from a group consisting of aluminum, aluminum alloys, tungsten, gold and copper on said barrier layer having said oxide film formed thereon.
Claim 5
Dependent Claim
22 words
A method of producing a semiconductor device according to claim 1 wherein said barrier layer comprises a high-melting point metal nitride film.
Claim 6
Dependent Claim
20 words
A method of producing a semiconductor device according to claim 1 wherein said barrier layer comprises a metal silicide film.
Claim 7
Dependent Claim
22 words
A method of producing a semiconductor device according to claim 2, wherein said barrier layer comprises a high-melting point metal nitride film.
Claim 8
Dependent Claim
20 words
A method of producing a semiconductor device according to claim 2, wherein said barrier layer comprises a metal silicide film.
Claim 9
Dependent Claim
41 words
A method of producing a semiconductor device according to claim 1, wherein said step of forming said oxide layer includes the substep of: heating said barrier layer to about 350° C.-450° C. in said atmosphere for about 15 to 60 minutes.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-08-16 | 1997-02-15 | 1997-08-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-08-16 | 2001-02-15 | 2001-08-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-08-16 | 2005-02-15 | 2005-08-17 | $7700.00 | Window Closed / Lapsed |