Abstract The present invention concerns a method for contact metallization on a semiconductor where a contact hole is formed in an interlevel dielectric layer down to a doped silicon region on the silicon substrate, and then the wafer is placed into a sputtering chamber where titanium is sputtered onto the wafer. A titanium nitride layer is sputtered on top of the titanium layer in the contact hole. This invention saves time and money, because the titanium nitride layer depositing and titanium layer forming steps can occur in the same chamber without forming the boro-phosphorous silicate glass layer in between. The titanium layer reacts with the silicon to form a silicide layer at the time of the sputtering in a hot deposition or in later steps that supply heat to the wafer for a period of time. Optionally, an additional titanium layer can be formed on top of the titanium nitride layer to clean off the titanium target used to sputter the titanium and titanium nitride layers on the wafer. A metal layer including aluminum is then formed on top of the titanium layer or the titanium nitride layer to form the contact metallization with the doped silicon region in the semiconductor.
A method of forming a contact metallization to a doped silicon region on a silicon wafer through an interlevel dielectric layer, said method comprising: forming a contact hole in the interlevel dielectric layer; thereafter, depositing titanium in the contact hole, said titanium deposition step including sputtering titanium from a titanium target to a wafer in a sputtering chamber; thereafter, depositing a titanium nitride layer in the contact hole by introducing nitrogen gas into the sputtering chamber and sputtering off of the titanium target so that a titanium nitride layer is formed on the wafer; stopping the supply of nitrogen gas to the sputtering chamber and sputtering a top titanium layer on top of the titanium nitride layer in a manner that nitrogen species that have attached themselves to the target during the titanium nitride deposition step are removed from the target; thereafter, depositing a metal layer including aluminum on the top titanium layer in the contact hole; and heating the wafer so at least some of the titanium in the first titanium layer reacts with the silicon in the doped silicon region to form a silicide layer.
Claim 2
Independent Claim
187 words
A method of forming a contact metallization to a doped silicon region on a silicon wafer through an interlevel dielectric layer, said method comprising: forming a contact hole in the interlevel dielectric layer; thereafter, depositing titanium in the contact hole, said titanium deposition step including sputtering titanium from a titanium target to a wafer in a sputtering chamber; thereafter, depositing a titanium nitride layer in the contact hole by introducing nitrogen gas into the sputtering chamber and sputtering off of the titanium target so that a titanium nitride layer is formed on the wafer; stopping the supply of nitrogen gas to the sputtering chamber and sputtering a top titanium layer on top of the titanium nitride layer in a manner that nitrogen species that have attached themselves to the target during the titanium nitride deposition step are removed from the target; thereafter, depositing a metal layer including aluminum on the top titanium layer in the contact hole; and heating the wafer so at least some of the titanium in the first titanium layer reacts with the silicon in the doped silicon region to form a silicide layer.