US5552341A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method for manufacturing the same
Assignee: Samsung Electronics Co Ltd
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Filing: 1993-12-10
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Granted: 1996-09-03
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Expires: 2013-12-10
Abstract
Abstract A semiconductor device and manufacturing method thereof having a diffusion barrier layer formed on a semiconductor wafer. The diffusion barrier layer has a surface region provided with a silylation layer which is formed on the diffusion barrier layer by a plasma process using silicon hydride or by a reactive sputtering method using SiH 4 . When a metal layer is formed on the silylation layer, the wettability between the diffusion barrier layer and the metal is enhanced and large grains are formed, thereby increasing the step coverage for the contact hole of the metal layer or for the via hole. Additionally, when heat treatment is performed after the metal layer is formed on the silylation layer, the reflow characteristic of the metal layer becomes good, to thereby facilitate the filling of the contact hole or the via hole. When the wiring layer is thus formed, metal wiring having good reliability can be obtained and a subsequent scintering process is rendered unnecessary.
Inventors
- 👤 Sang-in Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 04:36
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/077; H10W20/031; H10W20/032; H10W20/047; H10W20/048; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10W20/033; H10W20/035; H10W20/056; H10W20/059; H10W20/064; H10W20/066; H10W20/40; H10W20/45; H10W20/48; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
71 words
A method for manufacturing a semiconductor device comprising the steps of: forming a first diffusion barrier layer comprised of a refractory metal on a semiconductor substrate: forming a second diffusion barrier layer comprised of a refractory metal compound on said first diffusion barrier layer; forming a silylation layer on said second diffusion barrier layer; and forming a third diffusion barrier layer comprised of a refractory metal compound on said silylation layer.
Claim 2
Independent Claim
71 words
A method for manufacturing a semiconductor device comprising the steps of: forming a first diffusion barrier layer comprised of a refractory metal on a semiconductor substrate: forming a second diffusion barrier layer comprised of a refractory metal compound on said first diffusion barrier layer; forming a silylation layer on said second diffusion barrier layer; and forming a third diffusion barrier layer comprised of a refractory metal compound on said silylation layer.
Claim 3
Independent Claim
84 words
A method for manufacturing a semiconductor device, comprising the steps of: depositing a refractory metal on a semiconductor substrate, to thereby form a first diffusion barrier layer; depositing a refractory metal compound on said first diffusion barrier layer, to thereby form a second diffusion barrier layer, wherein said first and second diffusion barrier layers comprise a composite layer; forming a silylation layer on said composite layer; and depositing a refractory metal compound on said silylation layer to thereby form a third diffusion barrier layer.
Claim 4
Independent Claim
84 words
A method for manufacturing a semiconductor device, comprising the steps of: depositing a refractory metal on a semiconductor substrate, to thereby form a first diffusion barrier layer; depositing a refractory metal compound on said first diffusion barrier layer, to thereby form a second diffusion barrier layer, wherein said first and second diffusion barrier layers comprise a composite layer; forming a silylation layer on said composite layer; and depositing a refractory metal compound on said silylation layer to thereby form a third diffusion barrier layer.
Claim 5
Independent Claim
77 words
A method for manufacturing a semiconductor device, comprising the steps of: depositing a refractory metal on a semiconductor substrate, to thereby form a first diffusion barrier layer; depositing a refractory metal compound on said first diffusion barrier layer, to thereby form a second diffusion barrier layer, wherein said first and second diffusion barrier layers comprise a composite layer; and, forming a silylation layer on said composite layer by means of a plasma treatment process, using silicon hydride.
Claim 6
Independent Claim
77 words
A method for manufacturing a semiconductor device, comprising the steps of: depositing a refractory metal on a semiconductor substrate, to thereby form a first diffusion barrier layer; depositing a refractory metal compound on said first diffusion barrier layer, to thereby form a second diffusion barrier layer, wherein said first and second diffusion barrier layers comprise a composite layer; and, forming a silylation layer on said composite layer by means of a plasma treatment process, using silicon hydride.
Claim 7
Independent Claim
77 words
A method for manufacturing a semiconductor device, comprising the steps of: depositing a refractory metal on a semiconductor substrate, to thereby form a first diffusion barrier layer; depositing a refractory metal compound on said first diffusion barrier layer, to thereby form a second diffusion barrier layer, wherein said first and second diffusion barrier layers comprise a composite layer; and, forming a silylation layer on said composite layer by means of a reactive sputtering process, using silicon hydride.
Claim 8
Independent Claim
77 words
A method for manufacturing a semiconductor device, comprising the steps of: depositing a refractory metal on a semiconductor substrate, to thereby form a first diffusion barrier layer; depositing a refractory metal compound on said first diffusion barrier layer, to thereby form a second diffusion barrier layer, wherein said first and second diffusion barrier layers comprise a composite layer; and, forming a silylation layer on said composite layer by means of a reactive sputtering process, using silicon hydride.
Claim 9
Dependent Claim
24 words
The method as set forth in claim 2, further comprising the step of depositing a first metal layer on said third diffusion barrier layer.
Claim 10
Dependent Claim
23 words
The method as set forth in claim 5, further comprising the step of forming a second metal layer on said first metal layer.
Claim 11
Dependent Claim
28 words
The method as set forth in claim 6, wherein said first metal layer is comprised of a metal selected from a group consisting of aluminum and aluminum alloys.
Claim 12
Dependent Claim
28 words
The method as set forth in claim 7, wherein said second metal layer is comprised of a metal selected from a group consisting of aluminum and aluminum alloys.
Claim 13
Dependent Claim
21 words
The method as set forth in claim 3, further comprising the step of forming a metal layer on said silylation layer.
Claim 14
Dependent Claim
22 words
The method as set forth in claim 4, further comprising the step of forming a conductive interconnection layer on said silylation layer.
Claim 15
Independent Claim
96 words
A method for manufacturing a semiconductor device, comprising the steps of: forming an insulating layer on a semiconductor substrate; forming a contact hole in said insulating layer to expose an impurity doped region of said semiconductor substrate; forming a first diffusion barrier layer on said exposed impurity doped region of said semiconductor substrate and walls of said insulating layer defining said contact hole; forming a second diffusion barrier layer on said first diffusion barrier layer; forming a silylation layer on said second diffusion barrier layer; and, forming a third diffusion barrier layer on said silylation layer.
Claim 16
Independent Claim
96 words
A method for manufacturing a semiconductor device, comprising the steps of: forming an insulating layer on a semiconductor substrate; forming a contact hole in said insulating layer to expose an impurity doped region of said semiconductor substrate; forming a first diffusion barrier layer on said exposed impurity doped region of said semiconductor substrate and walls of said insulating layer defining said contact hole; forming a second diffusion barrier layer on said first diffusion barrier layer; forming a silylation layer on said second diffusion barrier layer; and, forming a third diffusion barrier layer on said silylation layer.
Claim 17
Dependent Claim
33 words
The method as set forth in claim 11, wherein said first diffusion barrier layer is comprised of a refractory metal and said second diffusion barrier layer is comprised of a refractory metal compound.
Claim 18
Dependent Claim
22 words
The method as set forth in claim 12, wherein said first and second diffusion barrier layers together comprise a composite barrier layer.
Claim 19
Dependent Claim
21 words
The method as set forth in claim 12, wherein said third diffusion barrier layer is comprised of a refractory metal compound.
Claim 20
Dependent Claim
23 words
The method as set forth in claim 11, further comprising the step of forming a metal layer on said third diffusion barrier layer.
Claim 21
Dependent Claim
24 words
The method as set forth in claim 11, further comprising the step of forming a conductive interconnection layer on said third diffusion barrier layer.
Claim 22
Independent Claim
93 words
A method for manufacturing a semiconductor device, comprising the steps of: forming an insulating layer on a semiconductor substrate; forming a contact hole in said insulating layer to expose an impurity doped region of said semiconductor substrate; forming a first diffusion barrier layer on said exposed impurity doped region of said semiconductor substrate and walls of said insulating layer defining said contact hole; forming a second diffusion barrier layer on said first diffusion barrier layer; forming an oxide layer on said second diffusion barrier layer; forming a silylation layer on said oxide layer.
Claim 23
Independent Claim
93 words
A method for manufacturing a semiconductor device, comprising the steps of: forming an insulating layer on a semiconductor substrate; forming a contact hole in said insulating layer to expose an impurity doped region of said semiconductor substrate; forming a first diffusion barrier layer on said exposed impurity doped region of said semiconductor substrate and walls of said insulating layer defining said contact hole; forming a second diffusion barrier layer on said first diffusion barrier layer; forming an oxide layer on said second diffusion barrier layer; forming a silylation layer on said oxide layer.
Claim 24
Dependent Claim
28 words
The method as set forth in claim 17, wherein said forming an oxide layer step is carried out by a process of annealing said second diffusion barrier layer.
Claim 25
Dependent Claim
32 words
The method as set forth in claim 18, wherein said annealing process is performed at a temperature of 450° C.-500° C., under a N 2 atmosphere, for a period of 30-60 minutes.
Claim 26
Dependent Claim
33 words
The method as set forth in claim 19, wherein said first diffusion barrier layer is comprised of a refractory metal and said second diffusion barrier layer is comprised of a refractory metal compound.
Claim 27
Dependent Claim
21 words
The method as set forth in claim 20, further comprising the step of forming a metal layer on said silylation layer.
Claim 28
Dependent Claim
22 words
The method as set forth in claim 20, further comprising the step of forming a conductive interconnection layer on said silylation layer.
Claim 29
Dependent Claim
23 words
The method as set forth in claim 20, further comprising the step of forming a third diffusion barrier layer on said silylation layer.
Claim 30
Dependent Claim
21 words
The method as set forth in claim 23, wherein said third diffusion barrier layer is comprised of a refractory metal compound.
Claim 31
Dependent Claim
23 words
The method as set forth in claim 23, further comprising the step of forming a metal layer on said third diffusion barrier layer.
Claim 32
Dependent Claim
24 words
The method as set forth in claim 23, further comprising the step of forming a conductive interconnection layer on said third diffusion barrier layer.
Claim 33
Dependent Claim
28 words
The method as set forth in claim 17, wherein said forming a silylation layer step is Carried out by means of a plasma treatment process, using silicon hydride.
Claim 34
Dependent Claim
28 words
The method as set forth in claim 17, wherein said forming a silylation layer step is carried out by means of a reactive sputtering process, using silicon hydride.
Claim 35
Dependent Claim
21 words
The method as set forth in claim 28, wherein said silicon hydride is introduced at a partial pressure of 0.5-5 mTorr.
Claim 36
Dependent Claim
60 words
The method as set forth in claim 27, wherein said silicon hydride is introduced at a partial pressure of 0.5-15 mTorr, and said plasma treatment process is carried out at a power level of 1-10 kW, in a vacuum of 5×10 -8 Torr or below, and with said semiconductor substrate at a temperature of between room temperature and 200° C.
Claim 37
Dependent Claim
26 words
The method as set forth in claim 30, further comprising the step of, during said plasma treatment process, adding hydrogen at a pressure of 0-5 mTorr.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
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| 3.5 Years (Year 4) | 1999-09-03 | 2000-03-04 | 2000-09-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-09-03 | 2004-03-04 | 2004-09-03 | $3760.00 | Window Closed / Lapsed |
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