Abstract A method for composing a low dielectric thermally conductive thin film is disclosed. A layer of precursor material is first deposited on a silicon substrate. Without affecting its structure and porosity, the layer of silica precursor material is then dried and becomes a layer of porous silica film. Subsequently, the silicon substrate is exposed to a methane gas atmosphere at a temperature of approximately 200-350° C., during which methane gas molecules are oxidized locally to liberate carbon atoms. Some of the liberated carbon atoms will bond to the interior of the porous silica film. The carbon atoms from the methane gas molecules then permeate the nanopores within the porous silica film such that the entire nanostructure of the porous silica film is carbidized. As a result, a composite porous silica film, which may serve as a dielectric layer within an interconnect structure, is formed.
A method for composing a thermally conductive dielectric layer within a semiconductor device, said method comprising the steps of: depositing a layer of silica precursor material on a substrate; drying said layer of silica precursor material to form a porous silica film; and carbidizing said porous silica film in an alkane gas atmosphere at an elevated temperature.
Claim 2
Independent Claim
57 words
A method for composing a thermally conductive dielectric layer within a semiconductor device, said method comprising the steps of: depositing a layer of silica precursor material on a substrate; drying said layer of silica precursor material to form a porous silica film; and carbidizing said porous silica film in an alkane gas atmosphere at an elevated temperature.
Claim 3
Dependent Claim
16 words
The method according to claim 1, wherein said depositing step is performed by a spin-on process.
Claim 4
Dependent Claim
28 words
The method according to claim 1, wherein said drying step further includes a step of drying said layer of silica precursor material while retaining its microstructure and porosity.
Claim 5
Dependent Claim
21 words
The method according to claim 1, wherein said alkane gas is methane gas and said elevated temperature is approximately 200-350° C.
Claim 6
Dependent Claim
23 words
The method according to claim 1, wherein said carbidizing step is performed at a pressure between approximately 100 mTorr and approximately 10 Torr.
Claim 7
Dependent Claim
19 words
The method according to claim 1, wherein said silica precursor material can be either tetraethylorthosilane gel or tetramethylorthosilicate gel.
Claim 8
Dependent Claim
11 words
The method according to claim 1, wherein said substrate is silicon.