Patent US6083851A successfully refreshed from Google Patents.
US6083851A
Expired / Lapsed
US
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HSQ with high plasma etching resistance surface for borderless vias
Assignee: Advanced Micro Devices Inc
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Filing: 1999-06-14
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Granted: 2000-07-04
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Expires: 2019-06-14
Abstract
Abstract HSQ is employed for gap filling patterned metal layers. The surface of the deposited HSQ gap fill layer is modified to decrease its plasma etching rate. Embodiments include modifying the HSQ surface by exposure to a plasma, such as a nitrogen-containing plasma, e.g., a plasma containing ammonia or hydrogen/nitrogen, to form a nitrided surface region. Reduction of the plasma etching rate of HSQ enables formation of reliable low resistance borderless vias.
Inventors
- 👤 Jeffrey A. Shields
- 👤 Khanh Tran
- 👤 Robert Chen
- 👤 Robert Dawson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 17:28
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6925; H10P14/63; H10P14/6326; H10P14/6342; H10P14/65; H10P14/6516; H10P14/6518; H10P14/6524; H10P14/6526; H10P14/6529; H10P14/6532; H10P14/6548; H10P95/00; H10P95/06; H10P95/062; H10P95/08
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
122 words
A method of manufacturing a semiconductor device, which method comprising sequentially: forming a first conductive feature having an upper surface and side surfaces; depositing a layer of hydrogen silsesquioxane (HSQ) on the upper surface and side surfaces of the first conductive feature, the HSQ layer having a first plasma etching rate and upper surface; planarizing so that an upper surface of the HSQ layer is substantially coplanar with the upper surface of the first conductive feature; and treating the upper surface of the HSQ layer in a plasma to modify the HSQ upper surface to decrease the plasma etching rate of the HSQ upper surface to a second plasma etching rate lower than that of the underlying portion of the HSQ layer.
Claim 2
Independent Claim
122 words
A method of manufacturing a semiconductor device, which method comprising sequentially: forming a first conductive feature having an upper surface and side surfaces; depositing a layer of hydrogen silsesquioxane (HSQ) on the upper surface and side surfaces of the first conductive feature, the HSQ layer having a first plasma etching rate and upper surface; planarizing so that an upper surface of the HSQ layer is substantially coplanar with the upper surface of the first conductive feature; and treating the upper surface of the HSQ layer in a plasma to modify the HSQ upper surface to decrease the plasma etching rate of the HSQ upper surface to a second plasma etching rate lower than that of the underlying portion of the HSQ layer.
Claim 3
Dependent Claim
19 words
The method according to claim 1, comprising treating the upper surface of the HSQ layer in a nitrogen-containing plasma.
Claim 4
Dependent Claim
24 words
The method according to claim 2, comprising treating the upper surface of the HSQ layer in a plasma containing ammonia or hydrogen and nitrogen.
Claim 5
Dependent Claim
31 words
The method according to claim 2, comprising treating the upper surface of the HSQ layer in a nitrogen-containing plasma to nitride a portion of the upper surface of the HSQ layer.
Claim 6
Dependent Claim
27 words
The method according to claim 4, wherein the thickness of the nitrided portion of the upper surface of the HSQ layer extends up to about 100 Å.
Claim 7
Dependent Claim
30 words
The method according to claim 4, comprising treating the upper surface of the HSQ layer in a nitrogen-containing plasma at a temperature of about 250° C. to about 300° C.
Claim 8
Dependent Claim
27 words
The method according to claim 1, wherein the first conductive feature is a metal feature of a first metal pattern of metal features spaced apart by gaps.
Claim 9
Dependent Claim
25 words
The method according to claim 7, wherein the metal features have a feature size of about 0.50 microns and the gaps extend about 0.375 microns.
Claim 10
Dependent Claim
20 words
The method according to claim 7, comprising depositing the HSQ layer by a spin on technique to fill the gaps.
Claim 11
Dependent Claim
19 words
The method according to claim 9, further comprising a dielectric layer on the plasma treated HSQ gap fill layer.
Claim 12
Dependent Claim
25 words
The method according to claim 10, wherein the dielectric layer comprises silicon oxide derived from tetraethyl orthosilicate or silane by plasma enhanced chemical vapor deposition.
Claim 13
Dependent Claim
54 words
The method according to claim 10, further comprising: forming a through-hole in the dielectric layer penetrating into the plasma treated HSQ layer exposing a portion of the upper surface and a portion of a side surface of the first metal feature; and filling the through-hole with a conductive material to form a borderless via.
Claim 14
Dependent Claim
28 words
The method according to claim 12, comprising filling the through-hole by depositing a first conductive barrier layer which acts as an adhesion promoter for a second conductive layer.
Claim 15
Dependent Claim
26 words
The method according to claim 13, wherein the first conductive layer comprises titanium, titanium nitride, titanium-tungsten or titanium-titanium nitride, and the second conductive layer comprises tungsten.
Claim 16
Dependent Claim
40 words
The method according to claim 14, further comprising forming a second patterned metal layer on the dielectric layer, wherein the second patterned metal layer comprises a second metal feature electrically connected to the first metal feature by the borderless via.
Claim 17
Dependent Claim
33 words
The method according to claim 7, wherein the first metal feature is a composite comprising a lower refractory layer, an intermediate layer comprising aluminum or an aluminum alloy and an upper anti-reflective coating.
Claim 18
Dependent Claim
43 words
A method according to claim 1, comprising a the treating of the upper surface of the HSQ layer in a nitrogen-containing plasma such that the modified upper surface has a dielectric constant greater than that of the underlying portion of the HSQ layer.
Claim 19
Dependent Claim
36 words
The method according to claim 17, wherein the modified upper surface has a dielectric constant greater than about 4, and the underlying portion of the HSQ layer has a dielectric constant of less than about 4.
Claim 20
Dependent Claim
40 words
The method according to claim 18, wherein the dielectric constant of the modified HSQ upper surface is about 4 to about 4.2, and the dielectric constant of the underlying portion of the HSQ layer is about 3 to about 3.3.
Claim 21
Dependent Claim
15 words
The method according to claim 1, comprising planarizing the HSQ layer by chemical mechanical polishing.
References Cited (Backward Citations)
US5145723A
Cited
US5549934A
Cited
US5607773A
Cited
US5619072A
Cited
US5750403A
Cited
US5818111A
Cited
US5960316A
Cited
US5866197A
Cited
US5969425A
Cited
US5888911A
Cited
US5888898A
Cited
US5958798A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-07-04 | 2004-01-03 | 2004-07-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-07-04 | 2008-01-03 | 2008-07-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-07-04 | 2012-01-03 | 2012-07-04 | $7700.00 | Window Closed / Lapsed |