US5750403A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming multi-layer wiring utilizing hydrogen silsesquioxane resin
Assignee: Yamaha Corp
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Filing: 1996-07-12
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Granted: 1998-05-12
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Expires: 2016-07-12
Abstract
Abstract On a first insulating film covering a substrate, wiring layer patterns are formed and thereafter, a second insulating film of plasma CVD--SiO 2 or the like is formed thereon. A hydrogen silsesquioxane resin film having a flat surface is spin-coated on the second insulating film. Thereafter, the resin film is subjected to a first heat treatment in an inert gas atmosphere to convert the resin film into a silicon oxide film of a preceramic phase. On this silicon oxide film, a third insulating film of plasma CVD--SiO 2 or the like is formed. Thereafter, a second heat treatment is performed to convert the silicon oxide film of preceramic phase into a silicon oxide film of a ceramic phase, while preventing fine size projections from being formed on the surface of the silicon oxide film. Thereafter, a second wiring layer is formed on the third insulating film. It is possible to planarize an interlevel insulating film and improve a process yield.
Inventors
- 👤 Yushi Inoue
- 👤 Takahisa Yamaha
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 17:25
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/6334; H10P14/65; H10P14/6516; H10P14/6518; H10P14/6519; H10P14/6529; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/6922; H10P14/6923; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/082; H10W20/093; H10W20/097; H10P14/6336; H10P14/6342; H10P14/662; H10P14/6684; H10P14/6686
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
141 words
A wiring forming method comprising the steps of: forming a first wiring layer on a first insulating film covering the surface of a substrate; forming a hydrogen silsesquioxane resin film having a surface over said first insulating film and said first wiring layer; subjecting said hydrogen silsesquioxane resin film to a first heat treatment in an inert gas atmosphere to convert said resin film into a silicon oxide film of a preceramic phase; forming a second insulating film on said silicon oxide film; subjecting said silicon oxide film covered with said second insulating film to a second heat treatment in an oxidizing atmosphere to convert said preceramic silicon oxide film into a silicon oxide film of a ceramic phase; and forming a second wiring layer on said second insulating film after said silicon oxide film of a ceramic phase is formed.
Claim 2
Dependent Claim
141 words
A wiring forming method comprising the steps of: forming a first wiring layer on a first insulating film covering the surface of a substrate; forming a hydrogen silsesquioxane resin film having a surface over said first insulating film and said first wiring layer; subjecting said hydrogen silsesquioxane resin film to a first heat treatment in an inert gas atmosphere to convert said resin film into a silicon oxide film of a preceramic phase; forming a second insulating film on said silicon oxide film; subjecting said silicon oxide film covered with said second insulating film to a second heat treatment in an oxidizing atmosphere to convert said preceramic silicon oxide film into a silicon oxide film of a ceramic phase; and forming a second wiring layer on said second insulating film after said silicon oxide film of a ceramic phase is formed.
Claim 3
Dependent Claim
29 words
A wiring forming method according to claim 1, wherein said first heat treatment is performed in a temperature range of 150° C. or higher and lower than 350° C.
Claim 4
Dependent Claim
23 words
A wiring forming method according to claim 2, wherein said first heat treatment is performed at a temperature of 300° C. or lower.
Claim 5
Dependent Claim
21 words
A wiring forming method according to claim 2, wherein the inert gas atmosphere of said first heat treatment is nitrogen gas.
Claim 6
Dependent Claim
25 words
A wiring forming method according to claim 1, wherein said second heat treatment is performed in a temperature range from 350° C. to 500° C.
Claim 7
Dependent Claim
24 words
A wiring forming method according to claim 5, wherein said second heat treatment is performed for a period of 5 minutes to 120 minutes.
Claim 8
Dependent Claim
26 words
A wiring forming method according to claim 1, wherein has a thickness in a range from 300 nm to 600 nm after said first heat treatment.
Claim 9
Dependent Claim
56 words
A wiring forming method according to claim 7, wherein said step of forming said second insulating film comprises forming a silicon oxide film by one of plasma CVD using SiH 4 as a silicon source material, plasma CVD using tetra ethyl ortho silicate as a silicon source material, and sputtering using SiO 2 as a target.
Claim 10
Dependent Claim
27 words
A wiring forming method according to claim 7, wherein said step of forming said second insulating film comprises forming a silicon oxide film by atmospheric pressure CVD.
Claim 11
Dependent Claim
23 words
A wiring forming method according to claim 9, wherein the silicon oxide film formed by the atmospheric pressure CVD contains phosphorous or boron.
Claim 12
Dependent Claim
33 words
A wiring forming method according to claim 10, further comprising the step of forming a third insulating film after said second heat treatment and before said step of forming said second wiring layer.
Claim 13
Dependent Claim
28 words
A wiring forming method according to claim 11, wherein said step of forming said third insulating film comprises forming a silicon oxide film by plasma CVD or sputtering.
Claim 14
Dependent Claim
51 words
A wiring forming method according to claim 1, further comprising the step of forming a surface covering insulating film by CVD on said first wiring layer and on said first insulating film between said step of forming said first wiring layer and said step of forming said hydrogen silsesquioxane resin film.
Claim 15
Dependent Claim
27 words
A wiring forming method according to claim 13, wherein said step of forming said surface covering insulating film comprises forming a silicon oxide film by plasma CVD.
Claim 16
Dependent Claim
45 words
A wiring forming method according to claim 1, further comprising the step of forming a via hole in said second insulating film and said silicon oxide film of a ceramic phase between said second heat treatment and said step of forming said second wiring layer.
Claim 17
Dependent Claim
26 words
A wiring forming method according to claim 15, wherein said step of forming said via hole includes isotropic etching and anisotropic etching following the isotropic etching.
Claim 18
Dependent Claim
19 words
A wiring forming method according to claim 16, wherein said isotropic etching is performed within said second insulating film.
Claim 19
Dependent Claim
15 words
A wiring forming method according to claim 17, wherein the isotropic etching is wet etching.
Claim 20
Independent Claim
61 words
A method of forming a wiring layer, comprising the steps of: (a) providing a substrate having an overlying structure; (b) forming a hydrogen silsesquioxane resin film of a preceramic phase over the substrate; (c) forming an interlayer insulating film over the preceramic phase hydrogen silsesquioxane resin film; and (d) after the step (c), ceramifying the hydrogen silsesquioxane resin film by heating.
Claim 21
Independent Claim
61 words
A method of forming a wiring layer, comprising the steps of: (a) providing a substrate having an overlying structure; (b) forming a hydrogen silsesquioxane resin film of a preceramic phase over the substrate; (c) forming an interlayer insulating film over the preceramic phase hydrogen silsesquioxane resin film; and (d) after the step (c), ceramifying the hydrogen silsesquioxane resin film by heating.
Claim 22
Dependent Claim
24 words
A method according to claim 19, wherein the overlying structure is a MOS transistor structure and a first insulating layer formed on the substrate.
Claim 23
Dependent Claim
16 words
A method according to claim 19, wherein the step (b) is performed in an inert atmosphere.
Claim 24
Dependent Claim
16 words
A method according to claim 19, wherein the step (d) is performed in an oxidizing atmosphere.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-05-11 | 2001-11-10 | 2002-05-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-05-11 | 2005-11-10 | 2006-05-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-05-11 | 2009-11-10 | 2010-05-12 | $7700.00 | Window Closed / Lapsed |