US5958798A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Borderless vias without degradation of HSQ gap fill layers
Assignee: Advanced Micro Devices Inc
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Filing: 1997-12-18
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Granted: 1999-09-28
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Expires: 2017-12-18
Abstract
Abstract Spin-on HSQ is employed to gap fill patterned metal layers in manufacturing ultra high density, multi-metal layer semiconductor devices. The degradation of deposited HSQ layers during formation of borderless vias, as from photoresist stripping using an O 2 -containing plasma, is significantly reduced or prevented by including hydrogen in the stripping plasma. Embodiments include stripping in a plasma containing a sufficient amount of a forming gas (H 2 /N 2 ) to prevent reduction of the number of Si--H bonds of the deposited HSQ gap fill layer below about 70%, before and after solvent cleaning.
Inventors
- 👤 Jeffrey A. Shields
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 23:59
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/071; H10W20/081; H10W20/093; H10W20/096; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6925
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
142 words
A method of manufacturing a semiconductor device, which method comprises: forming a first dielectric layer on a substrate; forming a first patterned conductive layer having gaps on the first dielectric layer, the first patterned conductive layer comprising a first conductive feature having an upper surface and side surfaces; depositing a dielectric layer comprising hydrogen silsesquioxane (HSQ) containing Si--H bonds to fill the gaps; depositing a second dielectric layer on the first patterned conductive layer and on the HSQ gap fill layer; forming a photoresist mask on the second dielectric layer; forming a through-hole in the second dielectric layer exposing a portion of the upper surface and at least a portion of a side surface of the first conductive feature, and penetrating into and exposing a portion of the HSQ gap fill layer; and removing the photoresist mask employing a plasma containing hydrogen.
Claim 2
Independent Claim
142 words
A method of manufacturing a semiconductor device, which method comprises: forming a first dielectric layer on a substrate; forming a first patterned conductive layer having gaps on the first dielectric layer, the first patterned conductive layer comprising a first conductive feature having an upper surface and side surfaces; depositing a dielectric layer comprising hydrogen silsesquioxane (HSQ) containing Si--H bonds to fill the gaps; depositing a second dielectric layer on the first patterned conductive layer and on the HSQ gap fill layer; forming a photoresist mask on the second dielectric layer; forming a through-hole in the second dielectric layer exposing a portion of the upper surface and at least a portion of a side surface of the first conductive feature, and penetrating into and exposing a portion of the HSQ gap fill layer; and removing the photoresist mask employing a plasma containing hydrogen.
Claim 3
Dependent Claim
39 words
The method according to claim 1, comprising removing the photoresist mask utilizing a plasma containing a sufficient amount of hydrogen to prevent reduction in the number of Si--H bonds in the as-deposited HSQ gap fill layer below about 70%.
Claim 4
Dependent Claim
16 words
The method according to claim 2, comprising removing the photoresist mask in a plasma containing oxygen.
Claim 5
Dependent Claim
27 words
The method according to claim 3, comprising removing the photoresist mask in a plasma containing a forming gas comprising equal parts by volume of nitrogen and hydrogen.
Claim 6
Dependent Claim
21 words
The method according to claim 4, wherein the plasma comprises about 2 to about 20 vol. % of the forming gas.
Claim 7
Dependent Claim
18 words
The method according to claim 5, wherein the plasma comprises about 10% by volume of the forming gas.
Claim 8
Dependent Claim
20 words
The method according to claim 2, wherein the conductive layer is a metal layer comprising metal features separated by gaps.
Claim 9
Dependent Claim
15 words
The method according to claim 7, comprising filling the through-hole with a composite conductive plug.
Claim 10
Dependent Claim
24 words
The method according to claim 8, comprising depositing a first conductive barrier layer which acts as an adhesion promoter for a second conductive layer.
Claim 11
Dependent Claim
25 words
The method according to claim 9, wherein the first conductive layer comprises titanium, titanium-nitride, titanium-tungsten or titanium-titanium nitride, and the second conductive layer comprises tungsten.
Claim 12
Dependent Claim
34 words
The method according to claim 7, wherein the first metal layer is a composite comprising: a lower refractory metal layer; an intermediate layer comprising aluminum or an aluminum alloy; and an upper anti-reflective coating.
Claim 13
Dependent Claim
40 words
The method according to claim 7, comprising forming a second patterned metal layer on the second dielectric layer, wherein the second patterned metal layer comprises a second metal feature electrically connected to the first metal feature through the borderless via.
Claim 14
Dependent Claim
21 words
The method according to claim 7, wherein the first metal feature comprises a metal line and the gaps comprise interwiring spacings.
Claim 15
Dependent Claim
37 words
The method according to claim 13, wherein the first patterned metal layer comprises a plurality of metal features having a maximum dimension of about 0.25 microns and interwiring spacings having a maximum dimension of about 0.375 microns.
Claim 16
Dependent Claim
21 words
The method according to claim 2, further comprising: solvent cleaning; and plasma stripping after solvent cleaning using a plasma containing hydrogen.
Claim 17
Dependent Claim
40 words
The method according to claim 15, wherein the plasma employed for stripping after solvent cleaning contains a sufficient amount of hydrogen to prevent reduction in the number of Si--H bonds in the as-deposited HSQ gap fill layer below about 70%.
Claim 18
Dependent Claim
18 words
The method according to claim 16, wherein the plasma employed for stripping subsequent to solvent cleaning contains oxygen.
Claim 19
Dependent Claim
35 words
The method according to claim 17, wherein the plasma employed for stripping subsequent to solvent cleaning contains about 2 to about 20 vol. % of a forming gas containing equal parts of nitrogen and hydrogen.
References Cited (Backward Citations)
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