Semiconductor memory device having trench-type capacitor structure using high dielectric film and its manufacturing method

Claim 2

A semiconductor memory device comprising: at least one MOS transistor formed on a semiconductor substrate; a capacitor formed in an interior space of an opening portion formed in said semiconductor substrate adjacent to said at least one MOS transistor; and a line layer connected to a gate electrode of said MOS transistor, said gate electrode being an island-shaped gate electrode separated from a region where said opening portion is formed, wherein said line layer is formed as a conductive layer at a different level above a level where said island-shaped gate electrode is formed, and wherein said line layer serves to connect said island-shaped gate electrode to at least one other gate electrode associated with another MOS transistor.

Claim 3

The device according to claim 1, wherein said line layer forms a word line.

Claim 4

The device according to claim 1, wherein said line layer is formed to pass an upper portion of said opening portion.

Claim 5

The device according to claim 2, wherein said line layer is formed to pass an upper portion of said opening portion.

Claim 6

The device according to claim 1, wherein said capacitor insulating film is between a storage electrode and said semiconductor substrate.

Claim 7

A semiconductor memory device according to claim 1, further comprising a connection electrode being formed only on said semiconductor substrate.

Claim 8

A semiconductor memory device comprising: at least one MOS transistor formed on a semiconductor substrate, said at least one MOS transistor having an island-shaped gate electrode formed on the semiconductor substrate with a gate insulating film and two diffusion regions formed in a surface of the semiconductor substrate at predetermined locations with the island-shaped gate electrode located therebetween; a capacitor formed in an interior space of an opening portion formed in the semiconductor substrate, said capacitor having a storage electrode connected to one of said diffusion regions through a connection electrode; and a word line connected to said island-shaped gate electrode of said MOS transistor, said island-shaped gate electrode being separated from a region where said opening portion is formed, wherein said word line is located at a different level above that of said island-shaped gate electrode and serves to connect said island-shaped gate electrode with at least one other gate electrode associated with another MOS transistor.

Claim 9

A semiconductor memory device comprising: at least one MOS transistor formed on a semiconductor substrate, said at least one MOS transistor having an island-shaped gate electrode formed on the semiconductor substrate with a gate insulating film and two diffusion regions formed in a surface of the semiconductor substrate at predetermined locations with the island-shaped gate electrode located therebetween; a capacitor formed in an interior space of an opening portion formed in the semiconductor substrate, said capacitor having a storage electrode connected to one of said diffusion regions through a connection electrode; and a word line connected to said island-shaped gate electrode of said MOS transistor, said island-shaped gate electrode being separated from a region where said opening portion is formed, wherein said word line is located at a different level above that of said island-shaped gate electrode and serves to connect said island-shaped gate electrode with at least one other gate electrode associated with another MOS transistor.

Claim 10

A semiconductor memory device comprising: a MOS transistor formed on a semiconductor substrate, and having a gate electrode formed on the semiconductor substrate with a gate insulating film and two diffusion regions formed in a surface of the semiconductor substrate at predetermined locations with the gate electrode located therebetween, said gate electrode being an island-shaped electrode separated from a region where an opening portion is formed in the semiconductor substrate adjacent to the MOS transistor; a capacitor formed in an interior space of said opening, said capacitor having a storage electrode connected to one of said diffusion regions; a connection electrode formed on said semiconductor substrate, and connected to one of said diffusion regions and said storage electrode; a first word line formed on said gate electrode of said MOS transistor; and a second word line formed above said connection electrode formed in the same level of said first word line.

Claim 11

A semiconductor memory device comprising: a MOS transistor formed on a semiconductor substrate, and having a gate electrode formed on the semiconductor substrate with a gate insulating film and two diffusion regions formed in a surface of the semiconductor substrate at predetermined locations with the gate electrode located therebetween, said gate electrode being an island-shaped electrode separated from a region where an opening portion is formed in the semiconductor substrate adjacent to the MOS transistor; a capacitor formed in an interior space of said opening, said capacitor having a storage electrode connected to one of said diffusion regions; a connection electrode formed on said semiconductor substrate, and connected to one of said diffusion regions and said storage electrode; a first word line formed on said gate electrode of said MOS transistor; and a second word line formed above said connection electrode formed in the same level of said first word line.

Claim 12

A semiconductor memory device according to claim 8, wherein, said connection electrode is provided with an insulating film formed thereon.

Claim 13

A semiconductor memory device comprising: at least one MOS transistor formed on a semiconductor substrate said at least one MOS transistor having an island-shaped gate electrode formed on the semiconductor substrate with a first insulating film, two diffusion regions formed in a surface of the semiconductor substrate at predetermined locations with said gate electrode located therebetween, and a side wall insulation film provided on a side wall of said first insulating film and said island-shaped gate electrode, said side wall insulation film gradually decreasing in thickness in a direction away from the surface of said semiconductor substrate; a capacitor formed in an interior space of an opening portion which has an inner side wall; a connection electrode extending between one of said diffusion regions and said capacitor; and a word line connected to said island-shaped gate electrode of said at least one MOS transistor, said island-shaped gate electrode being separated from a region where said opening portion is formed, said word line having an upper surface and side surfaces covered with a second insulating film, wherein said word line serves to connect said island-shaped gate electrode with at least one other gate electrode associated with another MOS transistor.

Claim 14

A semiconductor memory device comprising: at least one MOS transistor formed on a semiconductor substrate said at least one MOS transistor having an island-shaped gate electrode formed on the semiconductor substrate with a first insulating film, two diffusion regions formed in a surface of the semiconductor substrate at predetermined locations with said gate electrode located therebetween, and a side wall insulation film provided on a side wall of said first insulating film and said island-shaped gate electrode, said side wall insulation film gradually decreasing in thickness in a direction away from the surface of said semiconductor substrate; a capacitor formed in an interior space of an opening portion which has an inner side wall; a connection electrode extending between one of said diffusion regions and said capacitor; and a word line connected to said island-shaped gate electrode of said at least one MOS transistor, said island-shaped gate electrode being separated from a region where said opening portion is formed, said word line having an upper surface and side surfaces covered with a second insulating film, wherein said word line serves to connect said island-shaped gate electrode with at least one other gate electrode associated with another MOS transistor.

Claim 15

A semiconductor memory device comprising: at least one MOS transistor formed on a semiconductor substrate, said at least one MOS transistor having an island-shaped gate electrode formed on the semiconductor substrate with a first insulating film and two diffusion regions formed in a surface of the semiconductor substrate at predetermined locations with the island-shaped gate electrode located therebetween; a second insulating film formed on an opening portion which has an inner side wall and being higher in level than said first insulating film; a capacitor formed in an interior space of said opening portion and comprising a storage electrode, an insulating film which includes a first capacitor insulating film and a second capacitor insulating film, and a plate electrode, said first capacitor insulating film being formed on said inner side wall of said opening portion and said second capacitor insulating film being continuously formed on said inner side wall of said opening portion formed in the semiconductor substrate and a portion of a side wall of said second insulating film; a word line connected to the island-shaped gate electrode of said at least one MOS transistor, wherein said word line is formed as a conductive layer located at a different level above that of said island-shaped gate electrode and wherein said word line serves to connect said island-shaped gate electrode with at least one other gate electrode associated with another MOS transistor; and a connection electrode extending between one of said diffusion regions and said storage electrode.

Claim 16

A semiconductor memory device comprising: at least one MOS transistor formed on a semiconductor substrate, said at least one MOS transistor having an island-shaped gate electrode formed on the semiconductor substrate with a first insulating film and two diffusion regions formed in a surface of the semiconductor substrate at predetermined locations with the island-shaped gate electrode located therebetween; a second insulating film formed on an opening portion which has an inner side wall and being higher in level than said first insulating film; a capacitor formed in an interior space of said opening portion and comprising a storage electrode, an insulating film which includes a first capacitor insulating film and a second capacitor insulating film, and a plate electrode, said first capacitor insulating film being formed on said inner side wall of said opening portion and said second capacitor insulating film being continuously formed on said inner side wall of said opening portion formed in the semiconductor substrate and a portion of a side wall of said second insulating film; a word line connected to the island-shaped gate electrode of said at least one MOS transistor, wherein said word line is formed as a conductive layer located at a different level above that of said island-shaped gate electrode and wherein said word line serves to connect said island-shaped gate electrode with at least one other gate electrode associated with another MOS transistor; and a connection electrode extending between one of said diffusion regions and said storage electrode.

Claim 17

A semiconductor memory device comprising: at least one MOS transistor formed on a semiconductor substrate, said at least one MOS transistor having an island-shaped gate electrode formed on said semiconductor substrate with a gate insulating film and two diffusion regions formed in a surface of the semiconductor substrate at predetermined locations with the island-shaped gate electrode located therebetween; a capacitor formed in an interior space of an opening portion formed in said semiconductor substrate adjacent to said at least one MOS transistor; a connection electrode extending between one of said diffusion regions and said capacitor; and a line layer connected to said island-shaped gate electrode of said at least one MOS transistor, said line layer being formed as a conductive layer at a different level above a level where said island-shaped gate electrode is formed.

Claim 18

A semiconductor memory device comprising: at least one MOS transistor formed on a semiconductor substrate, said at least one MOS transistor having an island-shaped gate electrode formed on said semiconductor substrate with a gate insulating film and two diffusion regions formed in a surface of the semiconductor substrate at predetermined locations with the island-shaped gate electrode located therebetween; a capacitor formed in an interior space of an opening portion formed in said semiconductor substrate adjacent to said at least one MOS transistor; a connection electrode extending between one of said diffusion regions and said capacitor; and a line layer connected to said island-shaped gate electrode of said at least one MOS transistor, said line layer being formed as a conductive layer at a different level above a level where said island-shaped gate electrode is formed.

Claim 19

A semiconductor memory device according to claim 12, wherein said connection electrode is formed only on said semiconductor substrate.

Claim 20

A semiconductor memory device according to claim 12, wherein said line layer forms a word line.

Claim 21

A semiconductor memory device according to claim 12, wherein said word line is formed to pass an upper portion of said opening portion.

Claim 22

A semiconductor memory device according to claim 12, wherein said capacitor has a capacitor insulating film which comes in contact with a storage electrode having a boundary surface formed of a metallic layer.

Claim 23

A semiconductor memory device comprising: at least one MOS transistor formed on a semiconductor substrate, said at least one MOS transistor having an island-shaped gate electrode formed on the semiconductor substrate with a gate insulating film and two diffusion regions formed in a surface of the semiconductor substrate at predetermined locations with the island-shaped gate electrode located therebetween; a capacitor formed in an interior space of an opening portion formed in said semiconductor substrate, said capacitor having a storage electrode electrically connected to one of said diffusion regions; a connection electrode extending between one of said diffusion regions and said storage electrode; a first word line connected to the island-shaped gate electrode of said at least one MOS transistor, wherein said first word line is formed as a conductive layer at a different level above a level where said island-shaped gate electrode is formed; and a second word line connected to respective gate electrodes of further MOS transistors, said second word line being formed above said connection electrode and further formed in a same level as said first word line.

Claim 24

A semiconductor memory device comprising: at least one MOS transistor formed on a semiconductor substrate, said at least one MOS transistor having an island-shaped gate electrode formed on the semiconductor substrate with a gate insulating film and two diffusion regions formed in a surface of the semiconductor substrate at predetermined locations with the island-shaped gate electrode located therebetween; a capacitor formed in an interior space of an opening portion formed in said semiconductor substrate, said capacitor having a storage electrode electrically connected to one of said diffusion regions; a connection electrode extending between one of said diffusion regions and said storage electrode; a first word line connected to the island-shaped gate electrode of said at least one MOS transistor, wherein said first word line is formed as a conductive layer at a different level above a level where said island-shaped gate electrode is formed; and a second word line connected to respective gate electrodes of further MOS transistors, said second word line being formed above said connection electrode and further formed in a same level as said first word line.

Claim 25

A semiconductor memory device according to claim 17, wherein said connection electrode is formed only on said semiconductor substrate.

Claim 26

A semiconductor memory device comprising: at least one MOS transistor formed on a semiconductor substrate, said MOS transistor having an island-shaped gate electrode formed on the semiconductor substrate with a first insulating film and two diffusion regions formed in a surface of the semiconductor substrate at predetermined locations with the gate electrode located therebetween, and a side wall insulation film provided on a side wall of said first insulating film and said island-shaped gate electrode, said side wall insulating film gradually decreasing in thickness in a direction away from the surface of said semiconductor substrate; a capacitor formed in an interior space of an opening portion; a connection electrode extending between one of said diffusion regions and said capacitor; a first word line connected to said island-shaped gate electrode of said at least one MOS transistor, said first word line having an upper surface and side surfaces covered with a second insulating film; and a second word line formed above said connection electrode and further formed in a same level as said first word line.

Claim 27

A semiconductor memory device comprising: at least one MOS transistor formed on a semiconductor substrate, said MOS transistor having an island-shaped gate electrode formed on the semiconductor substrate with a first insulating film and two diffusion regions formed in a surface of the semiconductor substrate at predetermined locations with the gate electrode located therebetween, and a side wall insulation film provided on a side wall of said first insulating film and said island-shaped gate electrode, said side wall insulating film gradually decreasing in thickness in a direction away from the surface of said semiconductor substrate; a capacitor formed in an interior space of an opening portion; a connection electrode extending between one of said diffusion regions and said capacitor; a first word line connected to said island-shaped gate electrode of said at least one MOS transistor, said first word line having an upper surface and side surfaces covered with a second insulating film; and a second word line formed above said connection electrode and further formed in a same level as said first word line.

Claim 28

A semiconductor memory device according to claim 19, wherein said connection electrode is formed only on said semiconductor substrate.

Claim 29

A semiconductor memory device comprising: at least one MOS transistor formed on a semiconductor substrate, said MOS transistor having an island-shaped gate electrode formed on the semiconductor substrate with a gate insulating film and two diffusion regions formed in a surface of the semiconductor substrate at predetermined locations with the island-shaped gate electrode located therebetween; a capacitor formed in an interior space of an opening portion formed in said semiconductor substrate adjacent to said at least one MOS transistor; a first word line connected to said island-shaped gate electrode and including a line layer, wherein said first word line is formed as a conductive layer at a different level above a level where said island-shaped gate electrode is formed; and a second word line including a line layer that is provided above said capacitor and further formed in a same level as said first word line.

Claim 30

A semiconductor memory device comprising: at least one MOS transistor formed on a semiconductor substrate, said MOS transistor having an island-shaped gate electrode formed on the semiconductor substrate with a gate insulating film and two diffusion regions formed in a surface of the semiconductor substrate at predetermined locations with the island-shaped gate electrode located therebetween; a capacitor formed in an interior space of an opening portion formed in said semiconductor substrate adjacent to said at least one MOS transistor; a first word line connected to said island-shaped gate electrode and including a line layer, wherein said first word line is formed as a conductive layer at a different level above a level where said island-shaped gate electrode is formed; and a second word line including a line layer that is provided above said capacitor and further formed in a same level as said first word line.