US6015997A
Expired / Lapsed
US
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Semiconductor structure having a doped conductive layer
Assignee: Micron Technology Inc
•
Filing: 1997-02-19
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Granted: 2000-01-18
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Expires: 2017-02-19
Abstract
Abstract Methods and apparatus for forming word line stacks comprise one, or a combination of the following: a silicon diffusion barrier layer, doped with oxygen or nitrogen, coupled between a bottom silicon layer and a conductor layer; an amorphous silicon diffusion barrier coupled between a polysilicon layer and a conductor layer; a thin nitride layer coupled between a bottom silicon layer and a titanium silicide conductor layer, and a bottom silicon layer coupled to a conductor layer, which comprises C54-titanium silicide. Word line stacks formed by the methods of the invention are used in sub-0.25 micron line width applications and have a lower resistivity and improved thermal stability.
Inventors
- 👤 Yongjun Hu
- 👤 Pai-Hung Pan
- 👤 Er-Xuan Ping
- 👤 Randhir P.S. Thakur
- 👤 Scott DeBoer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:44
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/0131; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D64/664
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
68 words
A semiconductor transistor structure, comprising: a semiconductor layer; a gate oxide layer coupled to the semiconductor layer; a polysilicon layer coupled to the gate oxide layer; a non-nucleus silicon layer coupled to the polysilicon layer; a doped silicon region, doped with a dopant selected from the group consisting of oxygen and nitrogen, coupled to the non-nucleus silicon layer; and a conductor layer, coupled to the doped silicon region.
Claim 2
Dependent Claim
68 words
A semiconductor transistor structure, comprising: a semiconductor layer; a gate oxide layer coupled to the semiconductor layer; a polysilicon layer coupled to the gate oxide layer; a non-nucleus silicon layer coupled to the polysilicon layer; a doped silicon region, doped with a dopant selected from the group consisting of oxygen and nitrogen, coupled to the non-nucleus silicon layer; and a conductor layer, coupled to the doped silicon region.
Claim 3
Dependent Claim
70 words
A semiconductor transistor structure, comprising: a semiconductor layer; a gate oxide layer coupled to the semiconductor layer; a polysilicon layer coupled to the gate oxide layer; a non-nucleus silicon layer coupled to the polysilicon layer; a doped silicon region, doped with a dopant selected from the group consisting of oxygen and nitrogen, coupled to the non-nucleus silicon layer; and a C-54 titanium silicide layer, coupled to the doped silicon region.
Claim 4
Dependent Claim
70 words
A semiconductor transistor structure, comprising: a semiconductor layer; a gate oxide layer coupled to the semiconductor layer; a polysilicon layer coupled to the gate oxide layer; a non-nucleus silicon layer coupled to the polysilicon layer; a doped silicon region, doped with a dopant selected from the group consisting of oxygen and nitrogen, coupled to the non-nucleus silicon layer; and a C-54 titanium silicide layer, coupled to the doped silicon region.
Claim 5
Dependent Claim
56 words
A semiconductor transistor structure, comprising: a semiconductor layer; a gate oxide layer coupled to the semiconductor layer; a bottom silicon layer; a doped silicon region, doped with a dopant selected from the group consisting of oxygen and nitrogen, coupled to the bottom silicon layer; and a C-54 titanium silicide layer, coupled to the doped silicon region.
Claim 6
Dependent Claim
56 words
A semiconductor transistor structure, comprising: a semiconductor layer; a gate oxide layer coupled to the semiconductor layer; a bottom silicon layer; a doped silicon region, doped with a dopant selected from the group consisting of oxygen and nitrogen, coupled to the bottom silicon layer; and a C-54 titanium silicide layer, coupled to the doped silicon region.
Claim 7
Dependent Claim
47 words
A semiconductor transistor structure, comprising: a semiconductor layer; a gate oxide layer coupled to the semiconductor layer; a polysilicon layer coupled to the gate oxide layer; a non-nucleus silicon layer coupled to the polysilicon layer; and a C-54 titanium silicide layer, coupled to the non-nucleus silicon layer.
Claim 8
Dependent Claim
47 words
A semiconductor transistor structure, comprising: a semiconductor layer; a gate oxide layer coupled to the semiconductor layer; a polysilicon layer coupled to the gate oxide layer; a non-nucleus silicon layer coupled to the polysilicon layer; and a C-54 titanium silicide layer, coupled to the non-nucleus silicon layer.
Claim 9
Dependent Claim
63 words
A semiconductor transistor structure, comprising: a semiconductor layer; a gate oxide layer coupled to the semiconductor layer; a polysilicon layer coupled to the gate oxide layer; a non-nucleus silicon layer coupled to the polysilicon layer; a nitride layer, having a thickness of a few atomic layers, coupled to the non-nucleus silicon layer; and a C-54 titanium silicide layer, coupled to the nitride layer.
Claim 10
Dependent Claim
63 words
A semiconductor transistor structure, comprising: a semiconductor layer; a gate oxide layer coupled to the semiconductor layer; a polysilicon layer coupled to the gate oxide layer; a non-nucleus silicon layer coupled to the polysilicon layer; a nitride layer, having a thickness of a few atomic layers, coupled to the non-nucleus silicon layer; and a C-54 titanium silicide layer, coupled to the nitride layer.
Claim 11
Dependent Claim
55 words
A semiconductor transistor structure, comprising: a semiconductor layer; a gate oxide layer coupled to the semiconductor layer; a bottom silicon layer coupled to the gate oxide layer; a nitride layer, having a thickness of a few atomic layers, coupled to the bottom silicon layer; and a C-54 titanium silicide layer, coupled to the nitride layer.
Claim 12
Dependent Claim
55 words
A semiconductor transistor structure, comprising: a semiconductor layer; a gate oxide layer coupled to the semiconductor layer; a bottom silicon layer coupled to the gate oxide layer; a nitride layer, having a thickness of a few atomic layers, coupled to the bottom silicon layer; and a C-54 titanium silicide layer, coupled to the nitride layer.
Claim 13
Dependent Claim
62 words
A semiconductor transistor structure, comprising: a semiconductor layer; a gate oxide layer coupled to the semiconductor layer; a polysilicon layer coupled to the gate oxide layer; a non-nucleus silicon layer coupled to the polysilicon layer; a nitride layer, having a thickness of a few atomic layers, coupled to the non-nucleus silicon layer; and a titanium silicide layer, coupled to the nitride layer.
Claim 14
Dependent Claim
62 words
A semiconductor transistor structure, comprising: a semiconductor layer; a gate oxide layer coupled to the semiconductor layer; a polysilicon layer coupled to the gate oxide layer; a non-nucleus silicon layer coupled to the polysilicon layer; a nitride layer, having a thickness of a few atomic layers, coupled to the non-nucleus silicon layer; and a titanium silicide layer, coupled to the nitride layer.
Claim 15
Dependent Claim
78 words
A semiconductor transistor structure, comprising: a semiconductor layer; a gate oxide layer coupled to the semiconductor layer; a bottom silicon layer coupled to the gate oxide layer; a doped silicon region, doped with a dopant selected from the group consisting of oxygen and nitrogen, coupled to the bottom silicon layer; a nitride layer, having a thickness of a few atomic layers, coupled to the doped silicon region; and a C-54 titanium silicide layer, coupled to the nitride layer.
Claim 16
Dependent Claim
78 words
A semiconductor transistor structure, comprising: a semiconductor layer; a gate oxide layer coupled to the semiconductor layer; a bottom silicon layer coupled to the gate oxide layer; a doped silicon region, doped with a dopant selected from the group consisting of oxygen and nitrogen, coupled to the bottom silicon layer; a nitride layer, having a thickness of a few atomic layers, coupled to the doped silicon region; and a C-54 titanium silicide layer, coupled to the nitride layer.
Claim 17
Dependent Claim
77 words
A semiconductor transistor structure, comprising: a semiconductor layer; a gate oxide layer coupled to the semiconductor layer; a bottom silicon layer coupled to the gate oxide layer; a doped silicon region, doped with a dopant selected from the group consisting of oxygen and nitrogen, coupled to the bottom silicon layer; a nitride layer, having a thickness of a few atomic layers, coupled to the doped silicon region; and a titanium silicide layer, coupled to the nitride layer.
Claim 18
Dependent Claim
77 words
A semiconductor transistor structure, comprising: a semiconductor layer; a gate oxide layer coupled to the semiconductor layer; a bottom silicon layer coupled to the gate oxide layer; a doped silicon region, doped with a dopant selected from the group consisting of oxygen and nitrogen, coupled to the bottom silicon layer; a nitride layer, having a thickness of a few atomic layers, coupled to the doped silicon region; and a titanium silicide layer, coupled to the nitride layer.
Claim 19
Dependent Claim
56 words
A semiconductor transistor structure, comprising: a first semiconductor layer; a gate oxide layer coupled to the first semiconductor layer; an amorphous silicon semiconductor layer coupled to the gate oxide layer; a nitride layer having a thickness of a few atomic layers coupled to the second semiconductor layer; and a conductor layer, coupled to the nitride layer.
Claim 20
Dependent Claim
56 words
A semiconductor transistor structure, comprising: a first semiconductor layer; a gate oxide layer coupled to the first semiconductor layer; an amorphous silicon semiconductor layer coupled to the gate oxide layer; a nitride layer having a thickness of a few atomic layers coupled to the second semiconductor layer; and a conductor layer, coupled to the nitride layer.
Claim 21
Dependent Claim
18 words
The structure of claim 10, wherein the conductor layer comprises titanium silicide, approximately 400 to 3,000 angstroms thick.
Claim 22
Dependent Claim
24 words
The structure of claim 10, further comprising at least one diffusion barrier coupled between the gate oxide layer and the amorphous silicon semiconductor layer.
Claim 23
Dependent Claim
12 words
The structure of claim 10, wherein the conductor layer comprises titanium silicide.
Claim 24
Dependent Claim
15 words
The structure of claim 13, wherein the titanium silicide layer is in the C-54 phase.
Claim 25
Dependent Claim
19 words
The semiconductor transistor structure of claim 5 wherein the structure is comprised of a sub-0.25 micron word line stack.
Claim 26
Dependent Claim
19 words
The semiconductor transistor structure of claim 6 wherein the structure is comprised of a sub-0.25 micron word line stack.
Claim 27
Dependent Claim
19 words
The semiconductor transistor structure of claim 7 wherein the structure is comprised of a sub-0.25 micron word line stack.
Claim 28
Dependent Claim
59 words
A semiconductor structure, comprising: a semiconductor layer; an oxide layer coupled to the semiconductor layer; a polysilicon layer coupled to the oxide layer; an amorphous silicon layer coupled to the polysilicon layer; a nitride layer, having a thickness of a few atomic layers, coupled to the non-nucleus silicon layer; and a titanium silicide layer, coupled to the nitride layer.
Claim 29
Dependent Claim
59 words
A semiconductor structure, comprising: a semiconductor layer; an oxide layer coupled to the semiconductor layer; a polysilicon layer coupled to the oxide layer; an amorphous silicon layer coupled to the polysilicon layer; a nitride layer, having a thickness of a few atomic layers, coupled to the non-nucleus silicon layer; and a titanium silicide layer, coupled to the nitride layer.
Claim 30
Dependent Claim
16 words
The semiconductor structure of claim 18 wherein the titanium silicide layer is of the C-54 phase.
Claim 31
Dependent Claim
51 words
A semiconductor structure, comprising: a semiconductor layer; an oxide layer coupled to the semiconductor layer; a bottom silicon layer coupled to the oxide layer; a nitride layer, having a thickness of a few atomic layers, coupled to the bottom silicon layer; and a titanium silicide layer, coupled to the nitride layer.
Claim 32
Dependent Claim
51 words
A semiconductor structure, comprising: a semiconductor layer; an oxide layer coupled to the semiconductor layer; a bottom silicon layer coupled to the oxide layer; a nitride layer, having a thickness of a few atomic layers, coupled to the bottom silicon layer; and a titanium silicide layer, coupled to the nitride layer.
Claim 33
Dependent Claim
16 words
The semiconductor structure of claim 20 wherein the titanium silicide layer is of the C-54 phase.
Claim 34
Dependent Claim
59 words
A semiconductor structure, comprising: a semiconductor layer; an oxide layer coupled to the semiconductor layer; a polysilicon layer coupled to the oxide layer; a non-nucleus silicon layer coupled to the polysilicon layer; a nitride layer, having a thickness of a few atomic layers, coupled to the non-nucleus silicon layer; and a titanium silicide layer, coupled to the nitride layer.
Claim 35
Dependent Claim
59 words
A semiconductor structure, comprising: a semiconductor layer; an oxide layer coupled to the semiconductor layer; a polysilicon layer coupled to the oxide layer; a non-nucleus silicon layer coupled to the polysilicon layer; a nitride layer, having a thickness of a few atomic layers, coupled to the non-nucleus silicon layer; and a titanium silicide layer, coupled to the nitride layer.
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