Patent US6008121A successfully refreshed from Google Patents.
US6008121A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Etching high aspect contact holes in solid state devices
Assignee: Samsung Electronics Co Ltd
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Filing: 1996-03-19
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Granted: 1999-12-28
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Expires: 2016-03-19
Abstract
Abstract Contact holes through a dielectric are formed by forming a layer of polysilicon having a thickness between 0.02 um and 0.15 um inclusive on the dielectric, forming a layer of resist having a thickness between 0.4 um and 0.6 um inclusive on the layer of polysilicon, making a mask of the layer of resist, using it to form a mask in the layer of polysilicon and etching contact holes in the dielectric by exposing it to etching gasses through the apertures in the polysilicon mask. When the dielectric includes a layer of oxide adjacent the polysilicon mask and a layer of nitride between it and elements of the device, the resist mask is removed prior to etching the contact hole and a gas mixture of: C 4 F 8 ; one of Ar, H, F; CO; CF 4 or C 2 F 6 is used. Contact holes are made through a dielectric to conductors in a substrate by the same method, and desired cross sections are obtained by using a second resist mask and a selective etch for the polysilicon followed by a selective etch for the dielectric. These structures can be stacked and suitable interconnections made by the described method. Contact holes to gate electrodes can be etched using the basic process.
Inventors
- 👤 Chi-Hua Yang
- 👤 Virinder S. Grewal
- 👤 Volker B. Laux
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:41
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/73; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/084; H10W20/088; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/952
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
225 words
A method for producing contact holes through a dielectric layer to an element of a solid state device comprising the steps of: forming a layer of polysilicon on the dielectric layer, the dielectric layer including an oxide layer formed on a nitride layer, the layer of polysilicon having a thickness between 0.02 um and 0.15 um inclusive; forming a layer of resist material on the layer of polysilicon, the layer of resist material having a thickness between 0.4 um and 0.6 um inclusive; forming openings in the layer of resist material at locations where each of the contact holes are to be formed in the dielectric layer; etching apertures in the layer of polysilicon by exposing it to etching gas through the openings in the layer of resist material; and selectively etching contact holes in the dielectric layer by exposing it to etching gas through the apertures in the layer of polysilicon; wherein the dielectric layer is comprised of silicon oxide in contact with the layer of polysilicon and nitride in contact with the silicon oxide and wherein the gas used to etch the dielectric is a mixture of: C 4 F 8 ; one of Ar, H and Ne; CO; and one of CF 4 and C 2 F 6 ; and wherein the layer of resist is removed before etching the contact holes.
Claim 2
Independent Claim
225 words
A method for producing contact holes through a dielectric layer to an element of a solid state device comprising the steps of: forming a layer of polysilicon on the dielectric layer, the dielectric layer including an oxide layer formed on a nitride layer, the layer of polysilicon having a thickness between 0.02 um and 0.15 um inclusive; forming a layer of resist material on the layer of polysilicon, the layer of resist material having a thickness between 0.4 um and 0.6 um inclusive; forming openings in the layer of resist material at locations where each of the contact holes are to be formed in the dielectric layer; etching apertures in the layer of polysilicon by exposing it to etching gas through the openings in the layer of resist material; and selectively etching contact holes in the dielectric layer by exposing it to etching gas through the apertures in the layer of polysilicon; wherein the dielectric layer is comprised of silicon oxide in contact with the layer of polysilicon and nitride in contact with the silicon oxide and wherein the gas used to etch the dielectric is a mixture of: C 4 F 8 ; one of Ar, H and Ne; CO; and one of CF 4 and C 2 F 6 ; and wherein the layer of resist is removed before etching the contact holes.
Claim 3
Dependent Claim
26 words
A method as set forth in claim 1 wherein the etching gas to which the polysilicon layer is exposed in one of HBr, HCl and F.
Claim 4
Independent Claim
218 words
A method for forming contact holes for a device for use as one layer of a multilayered integrated device comprising the steps of: forming parallel conductors in the surface of a first substrate; forming a layer of dielectric on that surface; forming a layer of polysilicon material having a thickness between 0.02 um and 0.15 um inclusive on the layer of dielectric; forming a first layer of resist having a thickness between 0.4 um and 0.6 um inclusive on said layer of polysilicon; forming openings only in said layer of resist where contact holes are to be made through the layer of dielectric; forming apertures in the layer of polysilicon by exposing it to an etching gas through said openings; forming a first portion of a contact hole in the dielectric by exposing it to an etching gas through the apertures; removing the first layer of resist in which the openings have been formed; forming a second layer of resist at selected areas of the now exposed layer of polysilicon; etching the exposed polysilicon with a gas that etches it faster than it etches the dielectric; and etching the dielectric with gas that etches it faster than it etches the exposed polysilicon so as to form a second portion of a contact hole that extends to a conductor.
Claim 5
Independent Claim
218 words
A method for forming contact holes for a device for use as one layer of a multilayered integrated device comprising the steps of: forming parallel conductors in the surface of a first substrate; forming a layer of dielectric on that surface; forming a layer of polysilicon material having a thickness between 0.02 um and 0.15 um inclusive on the layer of dielectric; forming a first layer of resist having a thickness between 0.4 um and 0.6 um inclusive on said layer of polysilicon; forming openings only in said layer of resist where contact holes are to be made through the layer of dielectric; forming apertures in the layer of polysilicon by exposing it to an etching gas through said openings; forming a first portion of a contact hole in the dielectric by exposing it to an etching gas through the apertures; removing the first layer of resist in which the openings have been formed; forming a second layer of resist at selected areas of the now exposed layer of polysilicon; etching the exposed polysilicon with a gas that etches it faster than it etches the dielectric; and etching the dielectric with gas that etches it faster than it etches the exposed polysilicon so as to form a second portion of a contact hole that extends to a conductor.
Claim 6
Dependent Claim
47 words
A method as set forth in claim 3 further comprising the steps of: filling the first and second portions of the contact hole with metal; and polishing the metal so as to form a surface that is contiguous with a given surface of the layer of dielectric.
Claim 7
Dependent Claim
43 words
A method as set forth in claim 4 further comprising the steps of: forming a second layer of dielectric on the given surface having parallel conductors therein; and forming contact holes in the second layer of dielectric for providing connections to the metal.
Claim 8
Independent Claim
182 words
A method for forming contact holes for a gate electrode in a substrate comprising the steps of: forming a layer of doped polysilicon on the substrate; forming a conductive layer of silicide on the layer of doped polysilicon; forming a dielectric layer of one of oxide or nitride on the layer of silicide; forming a layer of polysilicon having a thickness between 0.02 μm and 0.15 μm inclusive on the dielectric layer; forming a layer of resist having a thickness between 0.4 μm and 0.6 μm inclusive on the layer of polysilicon; forming openings in the layer of resist at locations contact holes are to have; forming apertures in the layer of polysilicon by exposing it to etching gasses through the openings in the layer of resist; forming portions of a contact hole that only extend part of the way through the layer of dielectric by exposing the dielectric layer to an etching gas through the apertures; stripping the layer of resist; and continuing the etching so as to sacrifice the layer of polysilicon and extend the contact holes to the substrate.
Claim 9
Independent Claim
182 words
A method for forming contact holes for a gate electrode in a substrate comprising the steps of: forming a layer of doped polysilicon on the substrate; forming a conductive layer of silicide on the layer of doped polysilicon; forming a dielectric layer of one of oxide or nitride on the layer of silicide; forming a layer of polysilicon having a thickness between 0.02 μm and 0.15 μm inclusive on the dielectric layer; forming a layer of resist having a thickness between 0.4 μm and 0.6 μm inclusive on the layer of polysilicon; forming openings in the layer of resist at locations contact holes are to have; forming apertures in the layer of polysilicon by exposing it to etching gasses through the openings in the layer of resist; forming portions of a contact hole that only extend part of the way through the layer of dielectric by exposing the dielectric layer to an etching gas through the apertures; stripping the layer of resist; and continuing the etching so as to sacrifice the layer of polysilicon and extend the contact holes to the substrate.
Claim 10
Dependent Claim
29 words
A method as set forth in claim 6 wherein the etching gas used to form apertures in the thin layer of polysilicon is one of HBr, HCl and F.
Claim 11
Dependent Claim
33 words
A method as set forth in claim 6 wherein the etching gas used to form the contact holes is one of CHF 3 /CF 4 and C 4 F 8 /CF 4 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-12-27 | 2003-06-28 | 2003-12-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-12-27 | 2007-06-28 | 2007-12-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-12-27 | 2011-06-28 | 2011-12-28 | $7700.00 | Window Closed / Lapsed |