US5994164A
Expired / Lapsed
US
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Nanostructure tailoring of material properties using controlled crystallization
Assignee: Penn State Research Foundation
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Filing: 1998-03-18
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Granted: 1999-11-30
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Expires: 2018-03-18
Abstract
Abstract The present invention is generally related to controllably modifying or tailoring the structure of crystalline films to adjust and enhance the material properties of the film, such as optical, mechanical and electrical properties. Crystalline films generally refer to microcrystalline ( mu c) film, nanocrystalline (nc) film, polycrystalline (poly-c) film, and other crystallized films. The present invention provides a method for controllably obtaining desired grain sizes (or crystal sizes) in crystalline films and for controllably providing a predominance of grains sizes in a predetermined range to adjust and enhance the optical absorption properties of the crystalline film. The present invention also provide a method for controlling the mechanical properties, e.g., stress formation levels, during crystallization of at least a portion of the precursor film. Through control of the stress formation levels, it is possible to controllably adjust and enhance the electrical properties (e.g., doping efficiencies, carrier mobility, Fermi level and minority carrier lifetimes) of the crystallized portion.
Inventors
- 👤 Stephen J. Fonash
- 👤 A. Kaan Kalkan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:28
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/164; H10F77/1642; H10F71/00; H10F71/131; H10F77/1645; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3456; H10P14/38; H10P14/3802; H10P14/3806; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/545; Y02E10/546; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
92 words
A method for enhancing optical absorption characteristics of a semiconductor film, comprising the steps of: contacting at least a portion of an amorphous semiconductor film with a nucleating site material that is chosen to provide a predominance of grain sizes that are less than about 200 Angstroms, after an annealing of said amorphous film; and subjecting said amorphous silicon film to an annealing process, whereby said portion of said amorphous semiconductor film is converted to a crystalline film having a predominance of said grain sizes that are less than about 200 Angstroms.
Claim 2
Independent Claim
92 words
A method for enhancing optical absorption characteristics of a semiconductor film, comprising the steps of: contacting at least a portion of an amorphous semiconductor film with a nucleating site material that is chosen to provide a predominance of grain sizes that are less than about 200 Angstroms, after an annealing of said amorphous film; and subjecting said amorphous silicon film to an annealing process, whereby said portion of said amorphous semiconductor film is converted to a crystalline film having a predominance of said grain sizes that are less than about 200 Angstroms.
Claim 3
Dependent Claim
12 words
The method as recited in claim 1, wherein said semiconductor is silicon.
Claim 4
Dependent Claim
15 words
The method as recited in claim 1, wherein said nucleating site material is a palladium.
Claim 5
Independent Claim
95 words
A method for converting at least a portion of an amorphous semiconductor film to a crystallized state, said method providing reduced stress levels in said semiconductor film, said method comprising the steps of: depositing an amorphous semiconductor film on a substrate at a temperature which assures as a result of said depositing a presence of voids in said film; and subjecting said amorphous semiconductor film to an annealing process to crystallize at least a portion of said amorphous silicon film, said voids present in said amorphous semiconductor film enabling stress relaxation in the crystallized portion.
Claim 6
Independent Claim
95 words
A method for converting at least a portion of an amorphous semiconductor film to a crystallized state, said method providing reduced stress levels in said semiconductor film, said method comprising the steps of: depositing an amorphous semiconductor film on a substrate at a temperature which assures as a result of said depositing a presence of voids in said film; and subjecting said amorphous semiconductor film to an annealing process to crystallize at least a portion of said amorphous silicon film, said voids present in said amorphous semiconductor film enabling stress relaxation in the crystallized portion.
Claim 7
Dependent Claim
12 words
The method as recited in claim 4, wherein said semiconductor is silicon.
Claim 8
Independent Claim
139 words
A method for converting at least a portion of an amorphous semiconductor film to a crystallized state, said method assuring a reduced stress levels in said semiconductor film, said method comprising the steps of: depositing an interface layer on a substrate, said interface layer having a glass transition temperature; depositing an amorphous semiconductor film on said interface layer, said amorphous semiconductor film having a higher solid phase crystallization temperature than said glass transition temperature of said interface layer; and subjecting said amorphous semiconductor film and interface layer to an annealing process at a temperature that exceeds said glass transition temperature of said interface layer so as to soften said interface layer during said annealing, said annealing enabling a crystallization of at least a portion of said amorphous silicon film, while said interface layer enables a relaxation of strain therein.
Claim 9
Independent Claim
139 words
A method for converting at least a portion of an amorphous semiconductor film to a crystallized state, said method assuring a reduced stress levels in said semiconductor film, said method comprising the steps of: depositing an interface layer on a substrate, said interface layer having a glass transition temperature; depositing an amorphous semiconductor film on said interface layer, said amorphous semiconductor film having a higher solid phase crystallization temperature than said glass transition temperature of said interface layer; and subjecting said amorphous semiconductor film and interface layer to an annealing process at a temperature that exceeds said glass transition temperature of said interface layer so as to soften said interface layer during said annealing, said annealing enabling a crystallization of at least a portion of said amorphous silicon film, while said interface layer enables a relaxation of strain therein.
Claim 10
Dependent Claim
12 words
The method as recited in claim 6, wherein said semiconductor is silicon.
Claim 11
Dependent Claim
14 words
The method as recited in claim 7 wherein said interface layer is a glass.
Claim 12
Independent Claim
122 words
A method for crystallizing at least a portion of an amorphous semiconductor film to a crystallized state, and for further adjusting a level of residual tensile stress in said film comprising the steps of: treating at least a portion of said amorphous semiconductor film with a nucleating site material that is chosen to cause a shift of the first order Raman peak of a resulting crystalline portion of said film, after being subjected to an annealing process; and subjecting said amorphous silicon film to an annealing process to crystallize said at least a portion of said amorphous silicon film, said shift of said Raman peak indicating an adjustment of the residual tensile stress in said portion of said film that is crystallized.
Claim 13
Independent Claim
122 words
A method for crystallizing at least a portion of an amorphous semiconductor film to a crystallized state, and for further adjusting a level of residual tensile stress in said film comprising the steps of: treating at least a portion of said amorphous semiconductor film with a nucleating site material that is chosen to cause a shift of the first order Raman peak of a resulting crystalline portion of said film, after being subjected to an annealing process; and subjecting said amorphous silicon film to an annealing process to crystallize said at least a portion of said amorphous silicon film, said shift of said Raman peak indicating an adjustment of the residual tensile stress in said portion of said film that is crystallized.
Claim 14
Dependent Claim
31 words
The method of claim 9, wherein said nucleating material is selected to cause an increase in said residual stress and a resulting decrease in wave number position of said Raman peak.
Claim 15
Dependent Claim
11 words
The method of claim 10, wherein said nucleating material is Palladium.
Claim 16
Dependent Claim
31 words
The method of claim 9, wherein said nucleating material is selected to cause a decrease in said residual stress and a resulting increase in wave number position of said Raman peak.
Claim 17
Dependent Claim
11 words
The method of claim 12, wherein said nucleating material is Nickel.
Claim 18
Independent Claim
81 words
A method for enhancing optical absorption properties of a crystalline silicon film, comprising the steps of: providing said crystalline silicon film on a substrate; implanting ions in said crystalline silicon film to influence the optical absorption properties of said film, said implanting controlled to assure that species are implanted in said film at a dose to assure continued crystallinity of said film, said dose in excess of about 10 12 /cm 2 but less than about 10 15 /cm 2 .
Claim 19
Independent Claim
81 words
A method for enhancing optical absorption properties of a crystalline silicon film, comprising the steps of: providing said crystalline silicon film on a substrate; implanting ions in said crystalline silicon film to influence the optical absorption properties of said film, said implanting controlled to assure that species are implanted in said film at a dose to assure continued crystallinity of said film, said dose in excess of about 10 12 /cm 2 but less than about 10 15 /cm 2 .
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