US5773329A
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Polysilicon grown by pulsed rapid thermal annealing
Assignee: AUO Corp
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Filing: 1996-07-24
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Granted: 1998-06-30
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Expires: 2016-07-24
Abstract
Abstract A method of low temperature and rapid silicon crystallization or rapid transformation of amorphous silicon to high quality polysilicon over a large area is disclosed using a pulsed rapid thermal annealing (PRTA) method and a metal seed layer. The PRTA method forms polysilicon thin film transistors (TFTs) with a high throughput, on low temperature and large area glass substrates. The PRTA method includes the steps of forming over a glass layer a tri-layer structure having a layer of amorphous silicon sandwiched between bottom and top dielectric layers; selectively etching the top dielectric layer to expose portions of the amorphous silicon layer; forming a metal seed layer over the exposed portions of the amorphous silicon layer; and pulsed rapid thermal annealing using successive pulses separated by rest periods to transform the amorphous silicon layer to a polysilicon layer. In an alternate PRTA method, instead of forming the tri-layer structure, a bi-layer structure is formded over the glass layer. The bi-layer structure does not have the top dielectric layer of the tri-layer structure. The bi-layer structure includes dielectric and amorphous silicon layers.
Inventors
- 👤 Yue Kuo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:38
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3816; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0212; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10P14/27; H10P14/271; H10P14/274; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3238; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/382; Y; Y10; Y10S; Y10S148/00; Y10S148/004; Y10S148/016
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
88 words
A method of forming a thin film semiconductor device comprising the steps of: (a) forming over a glass layer a tri-layer structure having a layer of amorphous silicon sandwiched between bottom and top dielectric layers; (b) selectively etching said top dielectric layer to expose portions of said amorphous silicon layer; (c) forming a metal seed layer over said exposed portions of said amorphous silicon layer; and (d) pulsed rapid thermal annealing comprising successive pulses separated by rest periods to transform said amorphous silicon layer to a polysilicon layer.
Claim 2
Independent Claim
88 words
A method of forming a thin film semiconductor device comprising the steps of: (a) forming over a glass layer a tri-layer structure having a layer of amorphous silicon sandwiched between bottom and top dielectric layers; (b) selectively etching said top dielectric layer to expose portions of said amorphous silicon layer; (c) forming a metal seed layer over said exposed portions of said amorphous silicon layer; and (d) pulsed rapid thermal annealing comprising successive pulses separated by rest periods to transform said amorphous silicon layer to a polysilicon layer.
Claim 3
Dependent Claim
35 words
The method of claim 1, wherein said trilayer forming step forms said tri-layer over a glass having a predetermined, strain temperature, and wherein said annealing step anneals at a temperature exceeding said predetermined strain temperature.
Claim 4
Dependent Claim
35 words
The method of claim 1, wherein the pulsed rapid thermal annealing step comprises said successive pulses having a duration of approximately one second separated by said rest periods having a duration of approximately five seconds.
Claim 5
Dependent Claim
28 words
The method of claim 3, wherein said pulsed rapid thermal annealing step forms said polysilicon layer having a length of 50 μm in five of said successive pulses.
Claim 6
Dependent Claim
27 words
The method of claim 1 after said selectively etching step, further comprising the step of furnace annealing prior to said step of forming a metal seed layer.
Claim 7
Dependent Claim
35 words
The method of claim 1, wherein said selectively etching step comprises the steps of: forming mask over portions of said top dielectric layer; etching unmasked portions of said top dielectric layer; and removing said mask.
Claim 8
Dependent Claim
37 words
The method of claim 1, after said selectively etching step, further comprising forming a heavily doped silicon layer over said exposed portions of said amorphous silicon layer, prior to said step of metal seed layer forming step.
Claim 9
Dependent Claim
22 words
The method of claim 7, before said step of forming the heavily doped silicon layer, further comprising the step of furnace annealing.
Claim 10
Dependent Claim
40 words
The method of claim 1, after said pulsed rapid thermal annealing step, further comprising the steps of: forming an insulating layer over said metal seed layer and said top dielectric layer; and forming a gate layer over said insulating layer.
Claim 11
Dependent Claim
21 words
The method of claim 1, before said step of forming the tri-layer structure, forming a gate layer over said glass layer.
Claim 12
Dependent Claim
17 words
The method of claim 1, wherein said metal seed layer comprises one of nickel, titanium and palladium.
Claim 13
Independent Claim
53 words
A method of transforming an amorphous silicon layer to a polysilicon layer comprising the steps of: forming a metal layer over said amorphous silicon layer; and pulsed rapid thermal annealing said metal and amorphous silicon layers using successive thermal pulses having a duration of approximately one second and separated by approximately five seconds.
Claim 14
Independent Claim
53 words
A method of transforming an amorphous silicon layer to a polysilicon layer comprising the steps of: forming a metal layer over said amorphous silicon layer; and pulsed rapid thermal annealing said metal and amorphous silicon layers using successive thermal pulses having a duration of approximately one second and separated by approximately five seconds.
Claim 15
Independent Claim
74 words
A method of crystallizing an amorphous silicon layer formed over a glass layer having a predetermined strain temperature, comprising the steps of: forming a metal layer over said amorphous silicon layer; and pulsed rapid thermal annealing said metal and amorphous silicon layers using successive thermal pulses having a temperature that exceeds said predetermined temperature, each pulse being for a duration sufficiently short in time to crystallize said amorphous silicon layer without damaging said glass.
Claim 16
Independent Claim
74 words
A method of crystallizing an amorphous silicon layer formed over a glass layer having a predetermined strain temperature, comprising the steps of: forming a metal layer over said amorphous silicon layer; and pulsed rapid thermal annealing said metal and amorphous silicon layers using successive thermal pulses having a temperature that exceeds said predetermined temperature, each pulse being for a duration sufficiently short in time to crystallize said amorphous silicon layer without damaging said glass.
Claim 17
Independent Claim
102 words
A method of of forming a thin film semiconductor device comprising the steps of: (a) sequentially forming over a glass layer a dielectric layer, an amorphous silicon layer, a heavily doped silicon layer, and a metal layer; (b) patterning said amorphous silicon, heavily doped silicon, and metal layers; (c) patterning said patterned heavily doped silicon and metal layers to form a source, a drain, and source and drain contacts, separated by an exposed portion of said amorphous silicon layer; and (d) pulsed rapid thermal annealing comprising successive pulses separated by rest periods to transform said amorphous silicon layer to a polysilicon layer.
Claim 18
Independent Claim
102 words
A method of of forming a thin film semiconductor device comprising the steps of: (a) sequentially forming over a glass layer a dielectric layer, an amorphous silicon layer, a heavily doped silicon layer, and a metal layer; (b) patterning said amorphous silicon, heavily doped silicon, and metal layers; (c) patterning said patterned heavily doped silicon and metal layers to form a source, a drain, and source and drain contacts, separated by an exposed portion of said amorphous silicon layer; and (d) pulsed rapid thermal annealing comprising successive pulses separated by rest periods to transform said amorphous silicon layer to a polysilicon layer.
Claim 19
Dependent Claim
43 words
The method of claim 14, after said pulsed rapid thermal annealing step, further comprising the steps of: forming a gate dielectric layer over said exposed amporphous silicon portion and said source and drain contacts; and forming a gate over said gate dielectric layer.
Claim 20
Dependent Claim
21 words
The method of claim 14, before the sequentially forming step, further comprising the step of forming a gate over said substrate.
Claim 21
Dependent Claim
27 words
The method of claim 16, wherein the gate forming step comprises forming a gate layer over said substrate; and patterning said gate layer to form said gate.
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