US5365875A
Expired / Lapsed
US
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Semiconductor element manufacturing method
Assignee: Fujifilm Business Innovation Corp
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Filing: 1992-09-18
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Granted: 1994-11-22
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Expires: 2012-09-18
Abstract
Abstract An object of this invention is to provide a semiconductor element manufacturing method in which, in forming a polycrystal semiconductor layer by applying ultraviolet rays to an amorphous semiconductor layer formed on a large substrate, an excimer laser employed in the conventional art is used in such a manner that the layer is made uniform in crystallinity, thereby to manufacture a polycrystal semiconductor layer high in quality. According to the present invention, in a semiconductor element manufacturing method comprising a step of applying an excimer laser beam providing a beam spot having a predetermined irradiation area to an amorphous semiconductor layer formed on an insulating substrate to crystallize the amorphous semiconductor layer to obtain a polycrystal semiconductor layer, the beam spot is moved over said amorphous semiconductor layer in a scanning mode while being shifted with a pitch of at most 1 mm, so that all the parts of the semiconductor layer are substantially equal to one another in the energy applied thereto.
Inventors
- 👤 Ichirou Asai
- 👤 Noriji Kato
- 👤 Mario Fuse
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 06:56
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; C; C30; C30B; C30B1/00; C30B1/02; C30B1/023; H10P14/29; H10P14/2901; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3456; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3816; H10P14/382; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
98 words
A semiconductor element manufacturing method comprising the steps of: applying a first laser beam to a semiconductor layer of amorphous material formed on an insulating substrate, to form crystalline nuclei which are in a range of from 10 Å to 1000 Å in grain size, wherein an intensity of energy of said first laser beam is greater than 270 mJ/cm 2 ; and applying a second laser beam to said semiconductor layer to remove defects therefrom, wherein an intensity of energy of said second laser beam is greater than said intensity of energy of said first laser beam.
Claim 2
Dependent Claim
98 words
A semiconductor element manufacturing method comprising the steps of: applying a first laser beam to a semiconductor layer of amorphous material formed on an insulating substrate, to form crystalline nuclei which are in a range of from 10 Å to 1000 Å in grain size, wherein an intensity of energy of said first laser beam is greater than 270 mJ/cm 2 ; and applying a second laser beam to said semiconductor layer to remove defects therefrom, wherein an intensity of energy of said second laser beam is greater than said intensity of energy of said first laser beam.
Claim 3
Dependent Claim
73 words
A semiconductor element manufacturing method comprising the steps of: applying a laser beam to a semiconductor layer of amorphous material formed on an insulating substrate in such a manner that said laser beam forms a beam spot having a width on said semiconductor layer; and continuously moving said semiconductor layer and said laser beam relative to each other with a pitch of less than ten percent of said width of said beam spot.
Claim 4
Dependent Claim
73 words
A semiconductor element manufacturing method comprising the steps of: applying a laser beam to a semiconductor layer of amorphous material formed on an insulating substrate in such a manner that said laser beam forms a beam spot having a width on said semiconductor layer; and continuously moving said semiconductor layer and said laser beam relative to each other with a pitch of less than ten percent of said width of said beam spot.
Claim 5
Dependent Claim
163 words
A semiconductor element manufacturing method comprising the steps of: applying a first laser beam to a semiconductor layer of amorphous material formed on an insulating substrate in such a manner that said laser beam forms a first beam spot having a first width; continuously moving said semiconductor layer and said first laser beam relative to each other with a pitch of less than fifty percent of the first width of said first beam spot, to form crystalline nuclei which are in a range of from 10 Å to 1000 Å in grain size; applying a second laser beam to said semiconductor layer in such a manner that said second laser beam forms a second beam spot having a second width on said semiconductor layer; and continuously moving said semiconductor layer and said second laser beam relative to each other with a pitch of less than fifty percent of the second width of said second beam spot, to remove defects from said semiconductor layer.
Claim 6
Dependent Claim
163 words
A semiconductor element manufacturing method comprising the steps of: applying a first laser beam to a semiconductor layer of amorphous material formed on an insulating substrate in such a manner that said laser beam forms a first beam spot having a first width; continuously moving said semiconductor layer and said first laser beam relative to each other with a pitch of less than fifty percent of the first width of said first beam spot, to form crystalline nuclei which are in a range of from 10 Å to 1000 Å in grain size; applying a second laser beam to said semiconductor layer in such a manner that said second laser beam forms a second beam spot having a second width on said semiconductor layer; and continuously moving said semiconductor layer and said second laser beam relative to each other with a pitch of less than fifty percent of the second width of said second beam spot, to remove defects from said semiconductor layer.
Claim 7
Dependent Claim
29 words
A semiconductor element manufacturing method as claimed in claim 3, wherein an intensity of energy of said second laser beam is larger than that of said first laser beam.
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