Method for manufacturing a semiconductor device

Claim 1

A method for manufacturing a semiconductor device comprising the following sequential steps of: forming a crystallized semiconductor film comprising silicon containing a catalyst metal for promoting crystallization of said semiconductor film on an insulating surface of a substrate; treating a surface of said semiconductor film in an oxidizing atmosphere after forming said crystallized semiconductor film with a thermal annealing at 400-700° C. or with a photo annealing to form an oxide layer on said semiconductor film; coating a photoresist on said oxide layer; selectively etching said oxide layer and said semiconductor film; removing said photoresist to expose said oxide layer under said photoresist; and removing said oxide layer.

Claim 2

A method for manufacturing a semiconductor device comprising the following sequential steps of: forming a crystallized semiconductor film comprising silicon containing a catalyst metal for promoting crystallization of said semiconductor film on an insulating surface of a substrate; treating a surface of said semiconductor film in an oxidizing atmosphere after forming said crystallized semiconductor film with a thermal annealing at 400-700° C. or with a photo annealing to form an oxide layer on said semiconductor film; coating a photoresist on said oxide layer; selectively etching said oxide layer and said semiconductor film; removing said photoresist to expose said oxide layer under said photoresist; and removing said oxide layer.

Claim 4

A method for manufacturing a semiconductor device comprising the following sequential steps of: forming an amorphous semiconductor film comprising silicon on an insulating surface of a substrate; forming a layer in contact with said amorphous semiconductor film which contains a catalyst metal for promoting crystallization of said semiconductor film; crystallizing said amorphous semiconductor film; exposing a surface of said semiconductor film to an oxidizing atmosphere after said crystallizing; treating said surface in said oxidizing atmosphere with a thermal annealing at 400-700° C. or photoannealing in order to form an oxide layer on said semiconductor film; forming a photoresist on said oxide layer; selectively etching said oxide layer and said semiconductor film; and removing said photoresist and said the oxide layer under said photoresist.

Claim 5

A method for manufacturing a semiconductor device comprising the following sequential steps of: forming an amorphous semiconductor film comprising silicon on an insulating surface of a substrate; forming a layer in contact with said amorphous semiconductor film which contains a catalyst metal for promoting crystallization of said semiconductor film; crystallizing said amorphous semiconductor film; exposing a surface of said semiconductor film to an oxidizing atmosphere after said crystallizing; treating said surface in said oxidizing atmosphere with a thermal annealing at 400-700° C. or photoannealing in order to form an oxide layer on said semiconductor film; forming a photoresist on said oxide layer; selectively etching said oxide layer and said semiconductor film; and removing said photoresist and said the oxide layer under said photoresist.

Claim 8

A method for manufacturing a semiconductor device comprising the following sequential steps of: forming a silicon oxide layer over a substrate; forming a non-single crystalline semiconductor layer on said silicon oxide layer; disposing a catalyst capable of promoting crystallization of said semiconductor layer in contact with said semiconductor layer; crystallizing said semiconductor layer with the aid of said catalyst; exposing a surface of said semiconductor layer to an oxidizing atmosphere with heating after crystallizing said semiconductor layer in order to oxidize the surface of said semiconductor layer to form an oxide layer thereon; selectively forming a mask on said semiconductor layer with said oxide layer interposed therebetween, said mask comprising an organic material; selectively etching said semiconductor layer together with said oxide layer by using said mask; and removing said mask and said oxide layer underlying said mask.

Claim 9

A method for manufacturing a semiconductor device comprising the following sequential steps of: forming a silicon oxide layer over a substrate; forming a non-single crystalline semiconductor layer on said silicon oxide layer; disposing a catalyst capable of promoting crystallization of said semiconductor layer in contact with said semiconductor layer; crystallizing said semiconductor layer with the aid of said catalyst; exposing a surface of said semiconductor layer to an oxidizing atmosphere with heating after crystallizing said semiconductor layer in order to oxidize the surface of said semiconductor layer to form an oxide layer thereon; selectively forming a mask on said semiconductor layer with said oxide layer interposed therebetween, said mask comprising an organic material; selectively etching said semiconductor layer together with said oxide layer by using said mask; and removing said mask and said oxide layer underlying said mask.

Claim 15

A method for manufacturing a semiconductor device comprising the steps of: forming a silicon oxide layer over a substrate; forming a non-single crystalline semiconductor layer on said silicon oxide layer; disposing a catalyst metal containing material in contact with said non-single crystalline semiconductor layer; crystallizing said semiconductor layer with said catalyst metal containing material; exposing a surface of said semiconductor layer to an oxidizing atmosphere while irradiating said semiconductor layer with light in order to oxidize the surface of said semiconductor layer to form an oxide layer thereon after crystallizing said semiconductor layer; selectively forming a mask on said semiconductor layer with said oxide layer interposed therebetween, said mask comprising an organic material; selectively etching said semiconductor layer together with said oxide layer by using said mask; and removing said mask and said oxide layer underlying said mask.

Claim 16

A method for manufacturing a semiconductor device comprising the steps of: forming a silicon oxide layer over a substrate; forming a non-single crystalline semiconductor layer on said silicon oxide layer; disposing a catalyst metal containing material in contact with said non-single crystalline semiconductor layer; crystallizing said semiconductor layer with said catalyst metal containing material; exposing a surface of said semiconductor layer to an oxidizing atmosphere while irradiating said semiconductor layer with light in order to oxidize the surface of said semiconductor layer to form an oxide layer thereon after crystallizing said semiconductor layer; selectively forming a mask on said semiconductor layer with said oxide layer interposed therebetween, said mask comprising an organic material; selectively etching said semiconductor layer together with said oxide layer by using said mask; and removing said mask and said oxide layer underlying said mask.

Claim 26

A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; disposing a catalyst containing material in contact with said semiconductor film, said catalyst capable of promoting a crystallization of silicon; crystallizing said semiconductor film with the aid of said catalyst; oxidizing a surface of said semiconductor film to form an oxide layer thereon; and removing said oxide film in order to expose a surface of said semiconductor film.

Claim 27

A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; disposing a catalyst containing material in contact with said semiconductor film, said catalyst capable of promoting a crystallization of silicon; crystallizing said semiconductor film with the aid of said catalyst; oxidizing a surface of said semiconductor film to form an oxide layer thereon; and removing said oxide film in order to expose a surface of said semiconductor film.

Claim 31

A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; disposing a catalyst containing material in contact with said semiconductor film, said catalyst capable of promoting a crystallization of silicon; crystallizing said semiconductor film with the aid of said catalyst by heating; further crystallizing said semiconductor film by irradiating said semiconductor film with laser light after said heating; oxidizing a surface of said semiconductor film to form an oxide layer thereon; and removing said oxide film in order to expose a surface of said semiconductor film.

Claim 32

A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on an insulating surface; disposing a catalyst containing material in contact with said semiconductor film, said catalyst capable of promoting a crystallization of silicon; crystallizing said semiconductor film with the aid of said catalyst by heating; further crystallizing said semiconductor film by irradiating said semiconductor film with laser light after said heating; oxidizing a surface of said semiconductor film to form an oxide layer thereon; and removing said oxide film in order to expose a surface of said semiconductor film.