Method for manufacturing crystalline film

Claim 1

A method for manufacturing a crystalline film, comprising the steps of: depositing a thin film of a metallic material of which a eutectic compound is produced together with a material to be crystallized, on a planar amorphous or metallic substrate; patterning said thin film with a periodic relief having the same rotation symmetry as the crystal axis of a crystal face which is to be grown preferentially in parallel to the plane of said planar substrate, said periodic relief exposing said planar substrate corresponding to portions of said thin film removed by the patterning; heating the resulting substrate on which said thin film patterned with said periodic relief is disposed at a temperature higher than the eutectic temperature of said material to be crystallized and said metallic material; and depositing said material to be crystallized on said thin film patterned with said periodic relief under the heating conditions, whereby a crystalline film is precipitated on the initial planar substrate from the euctectic alloy layer which is composed of said material to be crystallized and said metallic thin film by the above steps.

Claim 2

A method for manufacturing a crystalline film, comprising the steps of: depositing a thin film of a metallic material of which a eutectic compound is produced together with a material to be crystallized, on a planar amorphous or metallic substrate; patterning said thin film with a periodic relief having the same rotation symmetry as the crystal axis of a crystal face which is to be grown preferentially in parallel to the plane of said planar substrate, said periodic relief exposing said planar substrate corresponding to portions of said thin film removed by the patterning; heating the resulting substrate on which said thin film patterned with said periodic relief is disposed at a temperature higher than the eutectic temperature of said material to be crystallized and said metallic material; and depositing said material to be crystallized on said thin film patterned with said periodic relief under the heating conditions, whereby a crystalline film is precipitated on the initial planar substrate from the euctectic alloy layer which is composed of said material to be crystallized and said metallic thin film by the above steps.

Claim 7

A method for manufacturing a crystalline film by growing a single-crystal thin film of a semiconductor on a planar amorphous substrate, said method comprising the steps of: forming a resist pattern having a desired shape on a planar amorphous substrate; depositing a thin film of a metal of which a eutectic compound is produced together with said semiconductor on the resulting substrate; patterning said thin film with a periodic pattern of a polygon or a triangle having cross angles in a shape similar to the crystal habit of the crystal of said semiconductor to be precipitated by removing said resist pattern together with the thin film thereon, said periodic pattern thereby exposing said planar amorphous substrate corresponding to the portions of said thin film removed by said patterning; and depositing a semiconductor on said thin film patterned with said periodic pattern under the heating conditions, whereby a single-crystal thin film of said semiconductor is precipitated on the initial planar substrate.

Claim 8

A method for manufacturing a crystalline film by growing a single-crystal thin film of a semiconductor on a planar amorphous substrate, said method comprising the steps of: forming a resist pattern having a desired shape on a planar amorphous substrate; depositing a thin film of a metal of which a eutectic compound is produced together with said semiconductor on the resulting substrate; patterning said thin film with a periodic pattern of a polygon or a triangle having cross angles in a shape similar to the crystal habit of the crystal of said semiconductor to be precipitated by removing said resist pattern together with the thin film thereon, said periodic pattern thereby exposing said planar amorphous substrate corresponding to the portions of said thin film removed by said patterning; and depositing a semiconductor on said thin film patterned with said periodic pattern under the heating conditions, whereby a single-crystal thin film of said semiconductor is precipitated on the initial planar substrate.

Claim 9

A method for manufacturing a crystalline film by growing a single-crystal thin film of a semiconductor on a planar amorphous substrate, comprising the steps of: deposition an initial thin film of a metal of which a eutectic compound is produced together with a semiconductor on a planar amorphous substrate; patterning said initial thin film with a periodic pattern of a polygon or a triangle having cross angles in a shape similar to the crystal habit of a single crystal thin film of said semiconductor to be precipitated, said periodic pattern exposing said planar amorphous substrate corresponding to portions of said initial thin film removed by the patterning; heating the resulting substrate on which said initial thin film patterned with said periodic pattern is disposed at a temperature higher than the eutectic temperature of said semiconductor and said metal; and depositing said semiconductor on said initial thin film patterned with said periodic pattern under the heating conditions, whereby said single crystal thin film of said semiconductor is precipitated on the initial planar substrate.

Claim 10

A method for manufacturing a crystalline film by growing a single-crystal thin film of a semiconductor on a planar amorphous substrate, comprising the steps of: deposition an initial thin film of a metal of which a eutectic compound is produced together with a semiconductor on a planar amorphous substrate; patterning said initial thin film with a periodic pattern of a polygon or a triangle having cross angles in a shape similar to the crystal habit of a single crystal thin film of said semiconductor to be precipitated, said periodic pattern exposing said planar amorphous substrate corresponding to portions of said initial thin film removed by the patterning; heating the resulting substrate on which said initial thin film patterned with said periodic pattern is disposed at a temperature higher than the eutectic temperature of said semiconductor and said metal; and depositing said semiconductor on said initial thin film patterned with said periodic pattern under the heating conditions, whereby said single crystal thin film of said semiconductor is precipitated on the initial planar substrate.