US4350561A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Single crystal processes and products
Assignee: Spire Corp
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Filing: 1980-05-16
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Granted: 1982-09-21
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Expires: 2000-05-16
Abstract
Abstract The surface of a starting single crystal of specified composition (e.g., silicon) is etched to produce a relief texture; a stratum of release composition (e.g., aluminum) is deposited on the relief texture to acquire a replica texture and is released to provide a replica master; a replica stratum of the specified composition in the amorphous or polycrystalline state is deposited on the replica master in order to acquire the original relief texture. It has been found that, when the replica stratum is recrystallized, it assumes a replica single crystal structure corresponding to the starting single crystal structure.
Inventors
- 👤 Roger G. Little
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 12:06
CPC Classifications
C; C30; C30B; C30B11/00; C30B11/002; C30B11/005; C30B29/00; C30B29/60; H; H10; H10F; H10F77/00; H10F77/70; H10F77/703; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904; Y10S117/905; Y10S117/913; Y10S148/00; Y10S148/135; Y10S438/00; Y10S438/964
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
108 words
A method for forming a single crystal structure which is a replica of a starting single crystal structure comprising: (a) texture etching a surface of a starting single crystal structure of a specific crystalline orientation; (b) making a replica master of said texture-etched surface of said starting single crystal structure; (c) depositing a replica stratum in the amorphous state on said replica master; and (d) recrystallizing said amorphous replica stratum to form a replica single crystal structure corresponding in crystalline orientation to said specific crystalline orientation of said starting single crystal structure and with a relief surface analogous to the texture-etched surface of said starting single crystal structure.
Claim 2
Independent Claim
108 words
A method for forming a single crystal structure which is a replica of a starting single crystal structure comprising: (a) texture etching a surface of a starting single crystal structure of a specific crystalline orientation; (b) making a replica master of said texture-etched surface of said starting single crystal structure; (c) depositing a replica stratum in the amorphous state on said replica master; and (d) recrystallizing said amorphous replica stratum to form a replica single crystal structure corresponding in crystalline orientation to said specific crystalline orientation of said starting single crystal structure and with a relief surface analogous to the texture-etched surface of said starting single crystal structure.
Claim 3
Dependent Claim
24 words
The method of claim 1 wherein said starting single crystal structure and said replica single crystal structure are each formed of a specified composition.
Claim 4
Dependent Claim
27 words
The method of claim 2 wherein said specified composition is a composition selected from the group consisting of silicon, germanium, gallium arsenide, cadmium telluride or mercury-cadmium telluride.
Claim 5
Independent Claim
109 words
A method for forming a replica single crystal structure from a replica stratum of specified composition in amorphous or polycrystalline state comprising: (a) texture-etching a surface of a starting single crystal wafer to produce a relief texture characteristic of the specified composition forming said wafer; (b) making a replica master with a replica texture mirroring said relief texture; (c) depositing a replica stratum of said specified composition in amorphous or polycrystalline state on said replica texture of said replica master; and (d) exposing said deposited replica stratum to a pulsed energy source to form a replica single crystal structure corresponding in crystalline orientation to said starting single crystal wafer.
Claim 6
Independent Claim
109 words
A method for forming a replica single crystal structure from a replica stratum of specified composition in amorphous or polycrystalline state comprising: (a) texture-etching a surface of a starting single crystal wafer to produce a relief texture characteristic of the specified composition forming said wafer; (b) making a replica master with a replica texture mirroring said relief texture; (c) depositing a replica stratum of said specified composition in amorphous or polycrystalline state on said replica texture of said replica master; and (d) exposing said deposited replica stratum to a pulsed energy source to form a replica single crystal structure corresponding in crystalline orientation to said starting single crystal wafer.
Claim 7
Dependent Claim
27 words
The method of claim 4 wherein said specified composition is a composition selected from the group consisting of silicon, germanium, gallium arsenide, cadmium telluride or mercury-cadmium telluride.
Claim 8
Independent Claim
182 words
A method for forming a single crystal structure which is a replica of a starting single crystal structure comprising: (a) texture etching a surface to a depth of about two microns of a starting single crystal structure of specified composition and crystalline orientation and of a thickness of about ten microns to produce a relief texture uniquely characteristic of said specified composition; (b) depositing a stratum of release composition on said relief texture to acquire a replica texture thereof; (c) releasing said stratum of release composition to provide a replica master with said replica texture of said relief texture; (d) depositing a replica stratum of said specified composition in the amorphous or polycrystalline state on said replica texture of said replica master to acquire said relief texture; and (e) recrystallizing said replica stratum by quickly melting it at an elevated temperature, followed by rapid cooling of the melt by thermal conduction into said replica master to form a replica single crystal structure whose relief texture and crystalline orientation correspond to said relief texture and crystalline orientation of said starting single crystal structure.
Claim 9
Independent Claim
182 words
A method for forming a single crystal structure which is a replica of a starting single crystal structure comprising: (a) texture etching a surface to a depth of about two microns of a starting single crystal structure of specified composition and crystalline orientation and of a thickness of about ten microns to produce a relief texture uniquely characteristic of said specified composition; (b) depositing a stratum of release composition on said relief texture to acquire a replica texture thereof; (c) releasing said stratum of release composition to provide a replica master with said replica texture of said relief texture; (d) depositing a replica stratum of said specified composition in the amorphous or polycrystalline state on said replica texture of said replica master to acquire said relief texture; and (e) recrystallizing said replica stratum by quickly melting it at an elevated temperature, followed by rapid cooling of the melt by thermal conduction into said replica master to form a replica single crystal structure whose relief texture and crystalline orientation correspond to said relief texture and crystalline orientation of said starting single crystal structure.
Claim 10
Dependent Claim
27 words
The method of claim 6 wherein said specified composition is a composition selected from the group consisting of silicon, germanium, gallium arsenide, cadmium telluride or mercury-cadmium telluride.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-09-20 | 1986-03-22 | 1986-09-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-09-20 | 1990-03-22 | 1990-09-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-09-20 | 1994-03-22 | 1994-09-21 | $7700.00 | Window Closed / Lapsed |