Abstract A polycrystalline semiconductor sheet may be converted to a macrocrystalline or monocrystalline semiconductor sheet through use of a controlled melt perturbation in the sheet. The process is initiated by formation of a small melt area generally in the center of the sheet of polycrystalline material and then by controlled sweeping motions a molten zone is ultimately formed across the entire width of the sheet. As the molten zone is allowed to solidify crystals of large size are formed, and with proper control of this crystal, can grow across the entire width of the polycrystalline sheet, or at least crystals of sufficiently large size for production of semiconductor activity may be produced. Following formation of macrocrystalline material across the width of the sheet the perturbation may be continued throughout the process to sweep any dislocations or crystal boundaries to the edge of the sheet where they may be trimmed from the remainder of the material as desired. This process allows formation of a highly modified macrocrystalline semiconductor material without requiring use of a seed crystal.
In a continuous process for converting a polycrystalline semiconductor sheet to a macrocrystalline sheet which comprises the steps of: heating said polycrystalline sheet to form a molten region of small width as compared to the width of said sheet, said molten region having enlarged molten regions at each end thereof; moving said sheet to allow said molten region to travel lengthwise along said sheet while extending the width of said molten region and maintaining said enlarged molten regions at the ends thereof; continuing to extend the width of said molten region until coextensive with the width of said sheet; and allowing said sheet to solidify into macrocrystalline material as said molten region passes lengthwise along it, the improvement comprising continuously creating additional small width molten regions having enlarged molten regions at each end thereof, said additional regions created centrally of the previously extended molten region as the edges of the previous enlarged molten regions extend to the sides of said sheet, and extending said additional molten regions laterally outwardly along said traveling molten region to the sides of said sheet.
Claim 2
Dependent Claim
180 words
In a continuous process for converting a polycrystalline semiconductor sheet to a macrocrystalline sheet which comprises the steps of: heating said polycrystalline sheet to form a molten region of small width as compared to the width of said sheet, said molten region having enlarged molten regions at each end thereof; moving said sheet to allow said molten region to travel lengthwise along said sheet while extending the width of said molten region and maintaining said enlarged molten regions at the ends thereof; continuing to extend the width of said molten region until coextensive with the width of said sheet; and allowing said sheet to solidify into macrocrystalline material as said molten region passes lengthwise along it, the improvement comprising continuously creating additional small width molten regions having enlarged molten regions at each end thereof, said additional regions created centrally of the previously extended molten region as the edges of the previous enlarged molten regions extend to the sides of said sheet, and extending said additional molten regions laterally outwardly along said traveling molten region to the sides of said sheet.
Claim 3
Dependent Claim
42 words
The process of claim 1 wherein said molten region having an extended width is shaped to have a linear central portion and shaped end portions whereby growth vectors associated with said shaped end portions sweep defects to the sides of said sheet.
Claim 4
Dependent Claim
15 words
The process of claim 2 wherein said shaped end portions have a substantially circular shape.