US4120743A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Crossed grain growth
Assignee: Motorola Solutions Inc
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Filing: 1975-12-31
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Granted: 1978-10-17
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Expires: 1995-12-31
Abstract
Abstract A method of producing a sheet of semiconductor material directly usable for the production of solar cells is disclosed. The method comprises establishing a molten region at an edge of a sheet of semiconductor material, moving the molten region across the sheet to create a path of elongated crystal grains, establishing a molten zone along a portion of the path of the elongated crystal grains and parallel thereto, and causing the molten zone to travel in a direction transverse to the path of elongated crystal grains.
Inventors
- 👤 Aslan Baghdadi
- 👤 Ralph J. Ellis
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 14:00
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B13/00; C30B13/14; C30B13/34; C30B29/60; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904; Y10S117/905
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
89 words
A method for modifying the crystalline structure of a sheet of semiconductor material which comprises: establishing a molten region at the edge of and extending through the thickness of said sheet; moving said molten region across said sheet to an opposing edge of said sheet thereby creating a path of elongated crystal grains; establishing a molten zone parallel to and abutting said path along a portion thereof and extending through the thickness of said sheet; and causing said molten zone to travel in a direction transverse to said path.
Claim 2
Independent Claim
89 words
A method for modifying the crystalline structure of a sheet of semiconductor material which comprises: establishing a molten region at the edge of and extending through the thickness of said sheet; moving said molten region across said sheet to an opposing edge of said sheet thereby creating a path of elongated crystal grains; establishing a molten zone parallel to and abutting said path along a portion thereof and extending through the thickness of said sheet; and causing said molten zone to travel in a direction transverse to said path.
Claim 3
Dependent Claim
36 words
The method of claim 1 further including the step of moving said molten region back and forth across said sheet to create a plurality of paths of elongated crystal grains prior to establishing said molten zone.
Claim 4
Dependent Claim
20 words
The method of claim 2 wherein said molten zone is established within the plurality of paths of elongated crystal grains.
Claim 5
Independent Claim
146 words
A method for producing a ribbon of semiconductor material having crystalline grains which comprise a substantial fraction of the width of said ribbon which comprises: providing a ribbon of semiconductor material; establishing a molten region contiguous with a longitudinal edge of said ribbon of semiconductor material and extending through the thickness of said ribbon; moving said molten region across said ribbon to a position at least contiguous with an opposing longitudinal edge of said ribbon of semiconductor material thereby creating a path of elongated crystal grains; heating in a direction transverse to the longitudinal edges of said ribbon along a portion of the path of elongated crystal grains to provide a molten zone abutting said path of elongated crystal grains and extending through the thickness of said ribbon; and causing the molten zone to travel in a direction parallel to the longitudinal edges of said ribbon.
Claim 6
Independent Claim
146 words
A method for producing a ribbon of semiconductor material having crystalline grains which comprise a substantial fraction of the width of said ribbon which comprises: providing a ribbon of semiconductor material; establishing a molten region contiguous with a longitudinal edge of said ribbon of semiconductor material and extending through the thickness of said ribbon; moving said molten region across said ribbon to a position at least contiguous with an opposing longitudinal edge of said ribbon of semiconductor material thereby creating a path of elongated crystal grains; heating in a direction transverse to the longitudinal edges of said ribbon along a portion of the path of elongated crystal grains to provide a molten zone abutting said path of elongated crystal grains and extending through the thickness of said ribbon; and causing the molten zone to travel in a direction parallel to the longitudinal edges of said ribbon.
Claim 7
Dependent Claim
39 words
The method of claim 4 wherein said molten zone is caused to travel by applying heat from a source while moving said ribbon in a direction transverse to the direction of said molten zone and away from said source.
Claim 8
Dependent Claim
22 words
The method of claim 5 wherein the width of said molten region is three to 10 times the thickness of the ribbon.
Claim 9
Dependent Claim
22 words
The method of claim 5 wherein the width of said molten zone is three to 10 times the thickness of the ribbon.
Claim 10
Dependent Claim
11 words
The method of claim 5 wherein said semiconductor material is silicon.
Claim 11
Dependent Claim
36 words
The method of claim 4 further including the step of moving said molten region back and forth across said ribbon to create a plurality of paths of elongated crystal grains prior to establishing said molten zone.
Claim 12
Dependent Claim
21 words
The method according to claim 9 wherein said molten zone is established within the plurality of paths of elongated crystal grains.
Claim 13
Dependent Claim
40 words
The method according to claim 9 wherein said molten zone is caused to travel by applying heat from a source while moving said ribbon in a direction transverse to the direction of said molten zone and away from said source.
Claim 14
Dependent Claim
11 words
The method of claim 11 wherein said semiconductor material is silicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-10-16 | 1982-04-17 | 1982-10-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-10-16 | 1986-04-17 | 1986-10-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-10-16 | 1990-04-17 | 1990-10-17 | $7700.00 | Window Closed / Lapsed |