US5977604A
Expired / Lapsed
US
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Buried layer in a semiconductor formed by bonding
Assignee: University of California
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Filing: 1996-03-08
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Granted: 1999-11-02
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Expires: 2016-03-08
Abstract
Abstract Buried layers are formed within a semiconductor. Metallic or insulating buried layers are produced several microns within a semiconductor substrate. The buried layer can confine current to the buried layer itself by using a conductive material to create the buried layer. The buried layer can also confine current to a specified area of the semiconductor, by using an insulating material inside of the buried layer or by leaving a created void within the material. The buried layer is useful in the construction of a semiconductor Vertical Cavity Laser (VCL). A buried isolation layer confines the current to a narrow active region increasing efficiency of the VCL. The buried layer is also useful in fabricating discrete devices, such as diodes, transistors, and photodetectors, as well as fabricating integrated circuits.
Inventors
- 👤 Dubravko Ivan Babic
- 👤 John E. Bowers
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 08:22
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/136; H01; H01S; H01S5/00; H01S5/10; H01S5/18; H01S5/183; H01S5/18341; H10D; H10D10/00; H10D10/01; H10D10/021; H10D10/051; H01S5/02; H01S5/0206; H01S5/0207; H01S5/0215; H01S5/0217; H01S5/18308; H01S5/18316; H01S5/18361; H01S5/18369; H01S5/1838; H01S5/20; H01S5/2054; H01S5/2059; H01S5/2072
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
222 words
A semiconductor optoelectronic device, comprising: a wafer substrate having a first surface and a second surface; a first epitaxial mirror having a top surface and a bottom surface, the bottom surface of the first epitaxial mirror coupled to the first surface of the wafer substrate; a first cladding layer having a first surface and a second surface, the first surface of the first cladding layer coupled to the top surface of the first epitaxial mirror, and the second surface having at least one valley and at least one mesa; a second cladding layer having a fusion surface and an epitaxial surface, the fusion surface of the second cladding layer coupled to at least one mesa of the second surface of the first cladding layer; a region having a first surface and a second surface, the first surface of the region coupled to the epitaxial surface of the second cladding layer; a third cladding layer having a top surface and a bottom surface, the bottom surface of the third cladding layer coupled to the second surface of the region; a second epitaxial mirror having an epitaxial surface and a contact surface, the epitaxial surface of the second epitaxial mirror coupled to the top surface of the third cladding layer; and a conductive contact coupled to the contact surface of the second epitaxial mirror.
Claim 2
Dependent Claim
222 words
A semiconductor optoelectronic device, comprising: a wafer substrate having a first surface and a second surface; a first epitaxial mirror having a top surface and a bottom surface, the bottom surface of the first epitaxial mirror coupled to the first surface of the wafer substrate; a first cladding layer having a first surface and a second surface, the first surface of the first cladding layer coupled to the top surface of the first epitaxial mirror, and the second surface having at least one valley and at least one mesa; a second cladding layer having a fusion surface and an epitaxial surface, the fusion surface of the second cladding layer coupled to at least one mesa of the second surface of the first cladding layer; a region having a first surface and a second surface, the first surface of the region coupled to the epitaxial surface of the second cladding layer; a third cladding layer having a top surface and a bottom surface, the bottom surface of the third cladding layer coupled to the second surface of the region; a second epitaxial mirror having an epitaxial surface and a contact surface, the epitaxial surface of the second epitaxial mirror coupled to the top surface of the third cladding layer; and a conductive contact coupled to the contact surface of the second epitaxial mirror.
Claim 3
Dependent Claim
21 words
The semiconductor optoelectronic device of claim 1, wherein at least one valley in the first cladding layer contains a conductive material.
Claim 4
Dependent Claim
19 words
The semiconductor optoelectronic device of claim 2, wherein the conductive material in the valley does not contact the mesa.
Claim 5
Dependent Claim
24 words
The semiconductor optoelectronic device of claim 1, wherein a current source is connected between the conductive material in the valley and the conductive contact.
Claim 6
Dependent Claim
26 words
The semiconductor optoelectronic device of claim 1, wherein the fusion surface of the second cladding layer has at least one mesa and at least one valley.
Claim 7
Dependent Claim
26 words
The semiconductor optoelectronic device of claim 1, wherein the bottom surface of the third cladding layer has at least one mesa and at least one valley.
Claim 8
Dependent Claim
14 words
The semiconductor optoelectronic device of claim 1, wherein the region is an active region.
Claim 9
Dependent Claim
14 words
The semiconductor optoelectronic device of claim 1, wherein the region is an absorbing region.
Claim 10
Dependent Claim
14 words
The semiconductor optoelectronic device of claim 1, wherein the region is a modulating region.
Claim 11
Dependent Claim
17 words
The semiconductor optoelectronic device of claim 1, wherein the semiconductor optoelectronic device is a vertical cavity laser.
Claim 12
Dependent Claim
100 words
A transistor comprising: a first wafer having a first surface and a second surface, the first surface of the first wafer having at least one mesa and at least one valley; a second wafer having a working surface and a bonding surface, the bonding surface of the second wafer coupled to the first surface of the first wafer and the working surface of the second wafer having at least one mesa and at least one valley; and a third wafer having a top surface and a bottom surface, the bottom surface coupled to the working surface of the second wafer.
Claim 13
Dependent Claim
100 words
A transistor comprising: a first wafer having a first surface and a second surface, the first surface of the first wafer having at least one mesa and at least one valley; a second wafer having a working surface and a bonding surface, the bonding surface of the second wafer coupled to the first surface of the first wafer and the working surface of the second wafer having at least one mesa and at least one valley; and a third wafer having a top surface and a bottom surface, the bottom surface coupled to the working surface of the second wafer.
Claim 14
Dependent Claim
79 words
A photodetector comprising: a wafer substrate having a first surface and a second surface, the first surface containing at least one valley and at least one mesa, wherein at least one valley contains a conductive material; a second wafer having a top surface and a bottom surface, the bottom surface being coupled to the first surface of the first wafer and coupled to the conductive material; and a conductive contact, coupled to the top surface of the second wafer.
Claim 15
Dependent Claim
79 words
A photodetector comprising: a wafer substrate having a first surface and a second surface, the first surface containing at least one valley and at least one mesa, wherein at least one valley contains a conductive material; a second wafer having a top surface and a bottom surface, the bottom surface being coupled to the first surface of the first wafer and coupled to the conductive material; and a conductive contact, coupled to the top surface of the second wafer.
Claim 16
Dependent Claim
17 words
The photodetector of claim 12, wherein the conductive material in the valley does not contact the mesa.
Claim 17
Dependent Claim
22 words
The photodetector of claim 12, wherein a current source is connected between the conductive material in the valley and the conductive contact.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-11-01 | 2003-05-03 | 2003-11-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-11-01 | 2007-05-03 | 2007-11-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-11-01 | 2011-05-03 | 2011-11-02 | $7700.00 | Window Closed / Lapsed |