US5407856A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Direct substrate bonding
Assignee: Fraunhofer-Gesellschaft zur Förderung der Angewandten Forschung eV
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Filing: 1992-05-08
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Granted: 1995-04-18
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Expires: 2012-05-08
Abstract
Abstract Disclosed is a process for producing a solid, surface bonding between two wafer plates, of which at least one is composed of a semiconducting material, such as e.g. silicon. The process has the following steps: on the cleaned surface of at least one wafer plate a film having a residual moisture from solvents containing silicates or phosphates is applied, the two wafer surfaces on at least one of which a film is applied are joined, the two wafers are tempered in the joined state at temperatures lower than approx. 420° C.
Inventors
- 👤 Hans J. Quenzer
- 👤 Wolfgang Benecke
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 10:47
CPC Classifications
H; H10; H10P; H10P10/00; H10P10/12; H10P10/128; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S148/135
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
95 words
A process for producing a solid, surface bonding between two wafer plates, of which at least one is composed of a semiconducting material, such as e.g. silicon, having the following steps: on the cleaned surface (11) of at least one said wafer plate (1) a film (3) having a residual moisture from solvents containing silicates or phosphates is applied, said two wafer surfaces (11, 21) on at least one of which said film (3) is applied are joined, said two wafers (1,2) are tempered in the joined state at temperatures lower than approx. 420° C.
Claim 2
Dependent Claim
95 words
A process for producing a solid, surface bonding between two wafer plates, of which at least one is composed of a semiconducting material, such as e.g. silicon, having the following steps: on the cleaned surface (11) of at least one said wafer plate (1) a film (3) having a residual moisture from solvents containing silicates or phosphates is applied, said two wafer surfaces (11, 21) on at least one of which said film (3) is applied are joined, said two wafers (1,2) are tempered in the joined state at temperatures lower than approx. 420° C.
Claim 3
Dependent Claim
16 words
A process according to claim 1, characterized by said two joined wafer surfaces being highly polished.
Claim 4
Dependent Claim
14 words
A process according to claim 1 or 2, characterized by said solvent being water.
Claim 5
Dependent Claim
27 words
A process according to one of the claims 1 to 3, characterized by the thickness of the layer of said film being a maximum of 100 nm.
Claim 6
Dependent Claim
41 words
A process according to one of the claims 1 to 4, characterized by said tempering procedure being conducted at temperatures lying when using silicate solutions between 150° C. and 300° C. when using phosphate solutions between 300° C. and 420° C.
Claim 7
Dependent Claim
31 words
A process according to one of the claims 1 to 5, characterized by said joined wafer surfaces to be joined being cleaned and dried prior to the applicaiton of said film.
Claim 8
Dependent Claim
36 words
A process according to one of the claims 1 to 6, characterized by said wafer plates placed on top of each other being stored for approx. 24 hours at room temperature prior to said tempering procedure.
Claim 9
Dependent Claim
19 words
A process according to one of the claims 1 to 7, characterized by said wafer plates having metalized areas.
Claim 10
Dependent Claim
28 words
A process according to one of the claims 1 to 8, characterized by one wafer being a silicon wafer and the other wafer being a quarz glass wafer.
Claim 11
Dependent Claim
28 words
A process according to one of the claims 1 to 8, characterized by said one wafer being a silicon wafer and said other wafer being a GaAs wafer.
Claim 12
Dependent Claim
28 words
A process according to one of the claims 1 to 8, characterized by said one wafer being a silicon wafer and said other wafer being a InP wafer.
Claim 13
Dependent Claim
40 words
A process according to one of the claims 1 to 8, characterized by said one wafer being a wafer made of a semiconducting material and said other wafer being made of an optically active material, such as e.g. lithium niobate.
Claim 14
Dependent Claim
28 words
A process according to one of the claims 1 to 8, characterized by at least one said wafer having an oxide layer on the surface to be joined.
Claim 15
Dependent Claim
15 words
A process according to claim 13, characterized by said oxide layer being a spin-on glass.
Claim 16
Dependent Claim
21 words
A process according to one of the claims 1 to 14, characterized by said applied film being composed of sodium silicate.
Claim 17
Dependent Claim
21 words
A process according to one of the claims 1 to 14, characterized by said applied film being composed of aluminium phosphate.
Claim 18
Dependent Claim
32 words
A process according to one of the claims 1 to characterized by the adhesive forces caused by said film immediately following the joining of said wafer plates compensating for any wafer warping.
Claim 19
Dependent Claim
21 words
A process according to one of the claims 1 to 17, characterized by said film being applied as a liquid film.
Claim 20
Dependent Claim
28 words
A process according to one of the claims 1 to 17, characterized by the film material having a residual moisture being applied by means of a spin-dry process.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-17 | 1998-10-17 | 1999-04-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-17 | 2002-10-17 | 2003-04-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-17 | 2006-10-17 | 2007-04-18 | $7700.00 | Window Closed / Lapsed |