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US5962904A
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Gate electrode stack with diffusion barrier
Assignee: Micron Technology Inc
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Filing: 1997-09-16
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Granted: 1999-10-05
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Expires: 2017-09-16
Abstract
Abstract Disclosed is a gate electrode stack structure that uses a refractory metal silicon nitride layer as a diffusion barrier. The gate electrode stack has several layers, including a gate oxide layer over the semiconductor substrate, a polysilicon layer over the gate oxide layer, and the diffusion barrier between the polysilicon layer and a layer of electrically conductive material above. The diffusion barrier, which is preferably composed of a substantially amorphous refractory metal silicon nitride such as tungsten silicon nitride, of does not oxidize when an oxidation process is applied to the gate electrode stack. Moreover, the diffusion barrier substantially prevents diffusion of the electrically conductive material into the polysilicon during heating processes. The refractory metal silicon nitride maintains a bulk resistivity less than 2,000 microhm-cm, thereby preserving satisfactory conductivity in the gate electrode stack. A process for forming the gate electrode stack and diffusion barrier is also disclosed.
Inventors
- 👤 Yongjun Hu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 04:42
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D64/664; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
54 words
A structure formed on a semiconductor substrate, said structure comprising: a layer of silicon-containing material positioned over said semiconductor substrate; a first electrically conductive layer comprising both tungsten silicon nitride and titanium silicon nitride positioned over said layer of silicon-containing material; and a second electrically conductive layer positioned over said first electrically conductive layer.
Claim 2
Dependent Claim
54 words
A structure formed on a semiconductor substrate, said structure comprising: a layer of silicon-containing material positioned over said semiconductor substrate; a first electrically conductive layer comprising both tungsten silicon nitride and titanium silicon nitride positioned over said layer of silicon-containing material; and a second electrically conductive layer positioned over said first electrically conductive layer.
Claim 3
Dependent Claim
74 words
A gate electrode stack formed on a semiconductor substrate, said gate electrode stack comprising: a gate oxide layer formed over a semiconductor substrate; a polysilicon layer formed over said gate oxide layer; a diffusion barrier formed over and in contact with said polysilicon layer, said diffusion barrier including a layer composed of both tungsten silicon nitride and titanium silicon nitride; and a refractory metal layer formed over and in contact with said diffusion barrier.
Claim 4
Dependent Claim
74 words
A gate electrode stack formed on a semiconductor substrate, said gate electrode stack comprising: a gate oxide layer formed over a semiconductor substrate; a polysilicon layer formed over said gate oxide layer; a diffusion barrier formed over and in contact with said polysilicon layer, said diffusion barrier including a layer composed of both tungsten silicon nitride and titanium silicon nitride; and a refractory metal layer formed over and in contact with said diffusion barrier.
Claim 5
Dependent Claim
22 words
A gate electrode stack as recited in claim 2, wherein said gate electrode stack has a sheet resistivity less than 1.7 ohm/sq.
Claim 6
Dependent Claim
30 words
A gate electrode stack as recited in claim 2, wherein said layer composed of both tungsten silicon nitride and titanium silicon nitride has a bulk resistivity less than 2,000 microhm-cm.
Claim 7
Dependent Claim
79 words
A diffusion barrier comprising: a first surface in contact with a silicon-containing material, said silicon-containing material being formed over a semiconductor substrate; a second surface opposite said first surface, said second surface being in contact with an electrically conductive material that is reactive with silicon when exposed to heat; and a layer composed of both tungsten silicon nitride and of titanium silicon nitride situated between said first and second surfaces and having a bulk resistivity less than 2,000 microhm-cm.
Claim 8
Dependent Claim
79 words
A diffusion barrier comprising: a first surface in contact with a silicon-containing material, said silicon-containing material being formed over a semiconductor substrate; a second surface opposite said first surface, said second surface being in contact with an electrically conductive material that is reactive with silicon when exposed to heat; and a layer composed of both tungsten silicon nitride and of titanium silicon nitride situated between said first and second surfaces and having a bulk resistivity less than 2,000 microhm-cm.
Claim 9
Dependent Claim
91 words
A structure formed on a semiconductor substrate, said structure comprising: a polysilicon layer positioned over said semiconductor substrate; a first electrically conductive layer composed of both tungsten silicon nitride and titanium silicon nitride positioned over said polysilicon layer, wherein said structure has a thickness and said first electrically conductive layer has a bulk resistivity less than 2,000 microhm-cm and a peak-to-peak surface roughness less than 25% of the thickness of said structure; and a second electrically conductive layer composed of a refractory metal and positioned over said first electrically conductive layer.
Claim 10
Dependent Claim
91 words
A structure formed on a semiconductor substrate, said structure comprising: a polysilicon layer positioned over said semiconductor substrate; a first electrically conductive layer composed of both tungsten silicon nitride and titanium silicon nitride positioned over said polysilicon layer, wherein said structure has a thickness and said first electrically conductive layer has a bulk resistivity less than 2,000 microhm-cm and a peak-to-peak surface roughness less than 25% of the thickness of said structure; and a second electrically conductive layer composed of a refractory metal and positioned over said first electrically conductive layer.
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