Patent US5946059A successfully refreshed from Google Patents.
US5946059A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electro-optical device and driving method for the same
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1997-11-04
•
Granted: 1999-08-31
•
Expires: 2017-11-04
Abstract
Abstract A grey tone display and a driving method are described. The display comprises a light influencing layer, an electrode pad located adjacent to the layer at one side of the layer in order to define a pixel in the layer, an n-channel field effect transistors connected to the electrode pad at its source terminal, a p-channel field effect transistors connected to the electrode pad at its source terminal, a first control line connected to the drain terminal of the n-channel field effect transistor, a second control line connected to the drain terminal of the p-channel field effect transistor, a third control line connected to the gate terminals of the n-channel field effect transistor and the p-channel field effect transistor, and a control circuit for supplying control signals to the first, second and third control lines. By this configuration, the voltage of the electrode pad can be arbitrarily controlled by adjusting the input level at the gate terminals.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Akira Mase
- 👤 Masaaki Hiroki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 12:33
CPC Classifications
G; G09; G09G; G09G3/00; G09G3/20; G09G3/34; G09G3/36; G09G3/3611; G09G3/3648; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/1368; G02F1/13624; G09G3/3659; H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6758; H10D62/00; H10D62/40; H10D86/00; H10D86/40; G02F1/136245; G02F2203/00; G02F2203/30; G09G2300/00; G09G2300/04; G09G2300/0421; G09G2300/0426; G09G2300/08; G09G2300/0809; G09G2300/0823; G09G2330/00; G09G2330/08; G09G3/2007; G09G3/2011
Claims Analysis
Total Claims: 51
Claim 1
Independent Claim
136 words
A method of manufacturing an electro-optical device comprising: forming at least one thin film transistor on said insulating surface, said thin film transistor comprising source, drain and channel regions; forming a gate insulating layer adjacent to said channel region; forming a gate electrode adjacent to said channel region; forming an interlayer insulating film comprising an inorganic material formed on said thin film transistor; forming an organic resin film over said thin film transistor and said interlayer insulating film; forming a pixel electrode formed over said organic resin film, wherein said interlayer insulating film is located between said organic resin film and at least said channel region of the thin film transistor; and wherein said channel region comprises silicon crystals of which apparent grain diameter calculated based on half-width of Raman spectra is 50 to 500 Å.
Claim 2
Independent Claim
136 words
A method of manufacturing an electro-optical device comprising: forming at least one thin film transistor on said insulating surface, said thin film transistor comprising source, drain and channel regions; forming a gate insulating layer adjacent to said channel region; forming a gate electrode adjacent to said channel region; forming an interlayer insulating film comprising an inorganic material formed on said thin film transistor; forming an organic resin film over said thin film transistor and said interlayer insulating film; forming a pixel electrode formed over said organic resin film, wherein said interlayer insulating film is located between said organic resin film and at least said channel region of the thin film transistor; and wherein said channel region comprises silicon crystals of which apparent grain diameter calculated based on half-width of Raman spectra is 50 to 500 Å.
Claim 3
Dependent Claim
20 words
A method of manufacturing an electro-optical device according to claim 1 wherein said pixel electrode is a transparent conductive film.
Claim 4
Dependent Claim
18 words
A method of manufacturing an electro-optical device according to claim 1 wherein said inorganic material comprises silicon oxide.
Claim 5
Dependent Claim
33 words
A method of manufacturing an electro-optical device according to claim 1 wherein said channel region comprises silicon and exhibits a peak of Raman spectra displaced from 522 cm-1 to the low frequency direction.
Claim 6
Dependent Claim
23 words
A method of manufacturing an electro-optical device according to claim 1 wherein said gate insulating film is 500 Å to 2000 Å thick.
Claim 7
Dependent Claim
22 words
A method of manufacturing an electro-optical device according to claim 1 wherein said interlayer insulating film is 0.2 to 0.6 pm thick.
Claim 8
Dependent Claim
20 words
A method of manufacturing an electro-optical device according to claim 1 consisting of 640×480 pixels arranged in a matrix form.
Claim 9
Dependent Claim
20 words
A method of manufacturing an electro-optical device according to claim 1 consisting of 1260×960 pixels arranged in a matrix form.
Claim 10
Independent Claim
143 words
A method of manufacturing an electro-optical device comprising: forming at least one thin film transistor on an insulating surface, said thin film transistor comprising: a crystalline semiconductor layer having source, drain and channel regions; a gate insulating layer adjacent to said channel region; and a gate electrode adjacent to said channel region; an interlayer insulating film comprising an inorganic material formed on said thin film transistor; and forming an organic resin film over said thin film transistor and said interlayer insulating film; wherein said interlayer insulating film is located between said organic resin film and at least said channel region of the thin film transistor, and said crystalline semiconductor layer has an electron mobility from 15 to 300 cm2/Vsec; and wherein said semiconductor layer comprises silicon and exhibits a peak of Raman spectra displaced from 522 cm -1 to the low frequency direction.
Claim 11
Independent Claim
143 words
A method of manufacturing an electro-optical device comprising: forming at least one thin film transistor on an insulating surface, said thin film transistor comprising: a crystalline semiconductor layer having source, drain and channel regions; a gate insulating layer adjacent to said channel region; and a gate electrode adjacent to said channel region; an interlayer insulating film comprising an inorganic material formed on said thin film transistor; and forming an organic resin film over said thin film transistor and said interlayer insulating film; wherein said interlayer insulating film is located between said organic resin film and at least said channel region of the thin film transistor, and said crystalline semiconductor layer has an electron mobility from 15 to 300 cm2/Vsec; and wherein said semiconductor layer comprises silicon and exhibits a peak of Raman spectra displaced from 522 cm -1 to the low frequency direction.
Claim 12
Dependent Claim
25 words
A method of manufacturing an electro-optical device according to claim 9 further comprising a step of forming a pixel electrode over said organic resin film.
Claim 13
Dependent Claim
20 words
A method of manufacturing an electro-optical device according to claim 10 wherein said pixel electrode is a transparent conductive film.
Claim 14
Dependent Claim
26 words
A method of manufacturing an electro-optical device according to claim 10 wherein said pixel electrode is connected to said thin film transistor via a conductive film.
Claim 15
Dependent Claim
35 words
A method of manufacturing an electro-optical device according to claim 9 wherein said semiconductor layer comprises silicon crystals of which apparent grain diameter calculated based on half-width of Raman spectra is 50 to 500 Å.
Claim 16
Dependent Claim
18 words
A method of manufacturing an electro-optical device according to claim 9 wherein said inorganic material comprises silicon oxide.
Claim 17
Dependent Claim
30 words
A method of manufacturing an electro-optical device according to claim 9 wherein said channel region comprises a material selected from the group consisting of silicon, germanium and a combination thereof.
Claim 18
Dependent Claim
23 words
A method of manufacturing an electro-optical device according to claim 9 wherein said gate insulating film is 500 Å to 2000 Å thick.
Claim 19
Dependent Claim
22 words
A method of manufacturing an electro-optical device according to claim 9 wherein said interlayer insulating film is 0.2 to 0.6 μm thick.
Claim 20
Dependent Claim
20 words
A method of manufacturing an electro-optical device according to claim 9 consisting of 640×480 pixels arranged in a matrix form.
Claim 21
Dependent Claim
20 words
A method of manufacturing an electro-optical device according to claim 9 consisting of 1260×960 pixels arranged in a matrix form.
Claim 22
Independent Claim
145 words
A method of manufacturing an electro-optical device comprising: forming at least one thin film transistor on an insulating surface, said thin film transistor comprising: a crystalline semiconductor layer having source, drain and channel regions; a gate insulating layer adjacent to said channel region; and a gate electrode adjacent to said channel region; forming an interlayer insulating film comprising an inorganic material on said thin film transistor; and forming an organic resin film over said thin film transistor and said interlayer insulating film, wherein said interlayer insulating film is located between said organic resin film and at least said channel region of the thin film transistor, and said crystalline semiconductor layer has a hole mobility from 10 to 200 cm 2 /Vsec; and wherein said semiconductor layer comprises silicon and exhibits a peak of Raman spectra displaced from 522 cm -1 to the low frequency direction.
Claim 23
Independent Claim
145 words
A method of manufacturing an electro-optical device comprising: forming at least one thin film transistor on an insulating surface, said thin film transistor comprising: a crystalline semiconductor layer having source, drain and channel regions; a gate insulating layer adjacent to said channel region; and a gate electrode adjacent to said channel region; forming an interlayer insulating film comprising an inorganic material on said thin film transistor; and forming an organic resin film over said thin film transistor and said interlayer insulating film, wherein said interlayer insulating film is located between said organic resin film and at least said channel region of the thin film transistor, and said crystalline semiconductor layer has a hole mobility from 10 to 200 cm 2 /Vsec; and wherein said semiconductor layer comprises silicon and exhibits a peak of Raman spectra displaced from 522 cm -1 to the low frequency direction.
Claim 24
Dependent Claim
25 words
A method of manufacturing an electro-optical device according to claim 20 further comprising a step of forming a pixel electrode over said organic resin film.
Claim 25
Dependent Claim
20 words
A method of manufacturing an electro-optical device according to claim 21 wherein said pixel electrode is a transparent conductive film.
Claim 26
Dependent Claim
26 words
A method of manufacturing an electro-optical device according to claim 21 wherein said pixel electrode is connected to said thin film transistor via a conductive film.
Claim 27
Dependent Claim
35 words
A method of manufacturing an electro-optical device according to claim 20 wherein said semiconductor layer comprises silicon crystals of which apparent grain diameter calculated based on half-width of Raman spectra is 50 to 500 Å.
Claim 28
Dependent Claim
18 words
A method of manufacturing an electro-optical device according to claim 20 wherein said inorganic material comprises silicon oxide.
Claim 29
Dependent Claim
30 words
A method of manufacturing an electro-optical device according to claim 20 wherein said channel region comprises a material selected from the group consisting of silicon, germanium and a combination thereof.
Claim 30
Dependent Claim
23 words
A method of manufacturing an electro-optical device according to claim 20 wherein said gate insulating film is 500 Å to 2000 Å thick.
Claim 31
Dependent Claim
22 words
A method of manufacturing an electro-optical device according to claim 20 wherein said interlayer insulating film is 0.2 to 0.6 μm thick.
Claim 32
Dependent Claim
20 words
A method of manufacturing an electro-optical device according to claim 20 consisting of 640×480 pixels arranged in a matrix form.
Claim 33
Dependent Claim
20 words
A method of manufacturing an electro-optical device according to claim 20 consisting of 1260×960 pixels arranged in a matrix form.
Claim 34
Independent Claim
161 words
A method of manufacturing an electro-optical device comprising: forming at least one thin film transistor on an insulating surface, said thin film transistor comprising: a crystalline semiconductor layer having source, drain and channel regions, said channel region doped with boron at a concentration, 1×10 15 to 1×10 18 cm -3 ; a gate insulating layer adjacent to said channel region; and a gate electrode adjacent to said channel region; an interlayer insulating film comprising an inorganic material formed on said thin film transistor; forming an organic resin film over said thin film transistor and said interlayer insulating film; wherein said inorganic film is located between said organic resin film and at least said channel region of the thin film transistor, and said crystalline semiconductor layer has an electron mobility from 15 to 300 cm 2 /Vsec; and wherein said channel region comprises silicon crystals of which apparent grain diameter calculated based on half-width of Raman spectra is 50 to 500 Å.
Claim 35
Independent Claim
161 words
A method of manufacturing an electro-optical device comprising: forming at least one thin film transistor on an insulating surface, said thin film transistor comprising: a crystalline semiconductor layer having source, drain and channel regions, said channel region doped with boron at a concentration, 1×10 15 to 1×10 18 cm -3 ; a gate insulating layer adjacent to said channel region; and a gate electrode adjacent to said channel region; an interlayer insulating film comprising an inorganic material formed on said thin film transistor; forming an organic resin film over said thin film transistor and said interlayer insulating film; wherein said inorganic film is located between said organic resin film and at least said channel region of the thin film transistor, and said crystalline semiconductor layer has an electron mobility from 15 to 300 cm 2 /Vsec; and wherein said channel region comprises silicon crystals of which apparent grain diameter calculated based on half-width of Raman spectra is 50 to 500 Å.
Claim 36
Dependent Claim
14 words
A method according to claim 31 wherein said interlayer insulating film comprises silicon oxide.
Claim 37
Independent Claim
163 words
A method of manufacturing an electro-optical device comprising: forming at least one thin film transistor on an insulating surface, said thin film transistor comprising: a crystalline semiconductor layer having source, drain and channel regions, said channel region doped with boron at a concentration 1×10 15 to 1×10 18 cm -3 ; a gate insulating layer adjacent to said channel region; and a gate electrode adjacent to said channel region; forming an interlayer insulating film comprising an inorganic material on said thin film transistor; and forming an organic resin film over said thin film transistor and said interlayer insulating film, wherein said interlayer insulating film is located between said organic resin film and at least said channel region of the thin film transistor, and said crystalline semiconductor layer has a hole mobility from 10 to 200 cm 2 /Vsec; and wherein said channel region comprises silicon crystals of which apparent grain diameter calculated based on half-width of Raman spectra is 50 to 500 Å.
Claim 38
Independent Claim
163 words
A method of manufacturing an electro-optical device comprising: forming at least one thin film transistor on an insulating surface, said thin film transistor comprising: a crystalline semiconductor layer having source, drain and channel regions, said channel region doped with boron at a concentration 1×10 15 to 1×10 18 cm -3 ; a gate insulating layer adjacent to said channel region; and a gate electrode adjacent to said channel region; forming an interlayer insulating film comprising an inorganic material on said thin film transistor; and forming an organic resin film over said thin film transistor and said interlayer insulating film, wherein said interlayer insulating film is located between said organic resin film and at least said channel region of the thin film transistor, and said crystalline semiconductor layer has a hole mobility from 10 to 200 cm 2 /Vsec; and wherein said channel region comprises silicon crystals of which apparent grain diameter calculated based on half-width of Raman spectra is 50 to 500 Å.
Claim 39
Independent Claim
118 words
A method of manufacturing an electro-optical device comprising: preparing at least one thin film transistor over a substrate, said thin film transistor comprising source, drain, channel regions, a gate insulating film adjacent to said channel region and a gate electrode adjacent to said channel region with said gate insulating film interposed therebetween; forming an inorganic insulating film covering said thin film transistor; forming an organic resin film over said thin film transistor with said inorganic insulating film interposed therebetween; forming a transparent conductive oxide film over said organic resin film by sputtering at a temperature ranging from room temperature to 150° C.; and annealing said transparent conductive oxide film at a temperature ranging from 200 to 400° C.
Claim 40
Independent Claim
118 words
A method of manufacturing an electro-optical device comprising: preparing at least one thin film transistor over a substrate, said thin film transistor comprising source, drain, channel regions, a gate insulating film adjacent to said channel region and a gate electrode adjacent to said channel region with said gate insulating film interposed therebetween; forming an inorganic insulating film covering said thin film transistor; forming an organic resin film over said thin film transistor with said inorganic insulating film interposed therebetween; forming a transparent conductive oxide film over said organic resin film by sputtering at a temperature ranging from room temperature to 150° C.; and annealing said transparent conductive oxide film at a temperature ranging from 200 to 400° C.
Claim 41
Dependent Claim
21 words
A method according to claim 34 wherein said transparent conductive oxide film is in direct contact with said organic resin film.
Claim 42
Dependent Claim
16 words
A method according to claim 34 wherein said gate electrode is located over said channel region.
Claim 43
Dependent Claim
14 words
A method according to claim 34 wherein said inorganic insulating film comprises silicon oxide.
Claim 44
Dependent Claim
16 words
A method according to claim 34 wherein said transparent conductive oxide film comprises indium tin oxide.
Claim 45
Dependent Claim
13 words
A method according to claim 34 wherein said organic resin film comprises polyimide.
Claim 46
Independent Claim
153 words
A method of manufacturing an electro-optical device comprising: preparing at least one thin film transistor over a substrate, said thin film transistor comprising source, drain, channel regions, a gate insulating film adjacent to said channel region and a gate electrode adjacent to said channel region with said gate insulating film interposed therebetween; forming an inorganic insulating film over said thin film transistor; forming an organic resin film over said thin film transistor with said inorganic insulating film interposed therebetween; forming a contact hole through said organic resin film; forming a transparent conductive oxide film over said organic resin film by sputtering at a temperature ranging from room temperature to 150° C. wherein said transparent conductive oxide film is electrically connected with one of said source and drain regions through said contact hole of the organic resin film; and annealing said transparent conductive oxide film at a temperature ranging from 200 to 400° C.
Claim 47
Independent Claim
153 words
A method of manufacturing an electro-optical device comprising: preparing at least one thin film transistor over a substrate, said thin film transistor comprising source, drain, channel regions, a gate insulating film adjacent to said channel region and a gate electrode adjacent to said channel region with said gate insulating film interposed therebetween; forming an inorganic insulating film over said thin film transistor; forming an organic resin film over said thin film transistor with said inorganic insulating film interposed therebetween; forming a contact hole through said organic resin film; forming a transparent conductive oxide film over said organic resin film by sputtering at a temperature ranging from room temperature to 150° C. wherein said transparent conductive oxide film is electrically connected with one of said source and drain regions through said contact hole of the organic resin film; and annealing said transparent conductive oxide film at a temperature ranging from 200 to 400° C.
Claim 48
Independent Claim
142 words
A method of manufacturing an electro-optical device comprising: preparing at least one thin film transistor over a substrate, said thin film transistor comprising source, drain, channel regions, a gate insulating film adjacent to said channel region and a gate electrode adjacent to said channel region with said gate insulating film interposed therebetween; forming an inorganic insulating film over said thin film transistor; forming an organic resin film over said thin film transistor with said inorganic insulating film interposed therebetween; forming a transparent conductive oxide film over said organic resin film by sputtering at a temperature ranging from room temperature to 150° C.; and annealing said transparent conductive oxide film at a temperature ranging from 200 to 400° C., wherein said channel region comprises silicon crystals of which apparent grain diameter calculated based on half-width of Raman spectra is 50 to 500 Å.
Claim 49
Independent Claim
142 words
A method of manufacturing an electro-optical device comprising: preparing at least one thin film transistor over a substrate, said thin film transistor comprising source, drain, channel regions, a gate insulating film adjacent to said channel region and a gate electrode adjacent to said channel region with said gate insulating film interposed therebetween; forming an inorganic insulating film over said thin film transistor; forming an organic resin film over said thin film transistor with said inorganic insulating film interposed therebetween; forming a transparent conductive oxide film over said organic resin film by sputtering at a temperature ranging from room temperature to 150° C.; and annealing said transparent conductive oxide film at a temperature ranging from 200 to 400° C., wherein said channel region comprises silicon crystals of which apparent grain diameter calculated based on half-width of Raman spectra is 50 to 500 Å.
Claim 50
Independent Claim
141 words
A method of manufacturing an electro-optical device comprising: preparing at least one thin film transistor over a substrate, said thin film transistor comprising source, drain, channel regions, a gate insulating film adjacent to said channel region and a gate electrode adjacent to said channel region with said gate insulating film interposed therebetween; forming an inorganic insulating film over said thin film transistor; forming an organic resin film over said thin film transistor with said inorganic insulating film interposed therebetween; forming a transparent conductive oxide film over said organic resin film by sputtering at a temperature ranging from room temperature to 150° C.; and annealing said transparent conductive oxide film at a temperature ranging from 200 to 400° C., wherein said channel region comprises silicon and exhibits a peak of Raman spectra displaced from 522 cm -1 to the low frequency direction.
Claim 51
Independent Claim
141 words
A method of manufacturing an electro-optical device comprising: preparing at least one thin film transistor over a substrate, said thin film transistor comprising source, drain, channel regions, a gate insulating film adjacent to said channel region and a gate electrode adjacent to said channel region with said gate insulating film interposed therebetween; forming an inorganic insulating film over said thin film transistor; forming an organic resin film over said thin film transistor with said inorganic insulating film interposed therebetween; forming a transparent conductive oxide film over said organic resin film by sputtering at a temperature ranging from room temperature to 150° C.; and annealing said transparent conductive oxide film at a temperature ranging from 200 to 400° C., wherein said channel region comprises silicon and exhibits a peak of Raman spectra displaced from 522 cm -1 to the low frequency direction.
References Cited (Backward Citations)
JPS4977537A
Cited
US4068020A
Cited
US4103297A
Cited
JPS53144297A
Cited
JPS5532026A
Cited
US4239346A
Cited
US4378417A
Cited
US4365013A
Cited
JPH02210330A
Cited
US4969031A
Cited
US4680580A
Cited
US4591892A
Cited
US4740829A
Cited
US5077223A
Cited
US4862237A
Cited
US4860069A
Cited
EP0161555A2
Cited
US4959700A
Cited
US4818077A
Cited
JPS61136263A
Cited
JPS61141174A
Cited
US4986213A
Cited
US4888305A
Cited
US4597160A
Cited
JPS62126677A
Cited
JPS6310777A
Cited
US4969025A
Cited
US4891330A
Cited
US5132754A
Cited
US5012228A
Cited
US4938565A
Cited
US5003356A
Cited
US5327001A
Cited
JPS6468724A
Cited
US5055899A
Cited
JPH01130131A
Cited
US4897360A
Cited
JPH01156725A
Cited
US4949141A
Cited
US5250931A
Cited
JPH01321073A
Cited
JPH0251129A
Cited
JPH02103925A
Cited
US5084905A
Cited
JPH02188723A
Cited
US5051570A
Cited
JPH02234134A
Cited
US5132821A
Cited
US5056895A
Cited
US5235195A
Cited
US5744818A
Cited
US5495353A
Cited
US5612799A
Cited
US5250818A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-08-30 | 2003-03-01 | 2003-08-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-08-30 | 2007-03-01 | 2007-08-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-08-30 | 2011-03-01 | 2011-08-31 | $7700.00 | Window Closed / Lapsed |