US5930625A — Method for fabricating a stacked, or crown shaped…

Claim 1

Independent Claim 257 words

A method for fabricating a stacked, or crown shaped, capacitor structure, for a DRAM device, on a semiconductor substrate, comprising the steps of: providing a transfer gate transistor, on said semiconductor substrate, comprised of a polysilicon gate structure, on a gate insulator layer, with a source and drain region in regions of said semiconductor substrate, not covered by said polysilicon gate structures; forming a storage node contact hole, in an insulator layer, exposing the top surface of a source region; forming a storage node electrode shape, from an in situ doped, amorphous silicon layer, on the top surface of said insulator layer, and completely filling said storage node contact hole; performing a preclean procedure in a low pressure chamber, located in a cluster tool, to remove native oxide from the surface of said storage node electrode shape; selectively forming hemispherical grain, (HSG), silicon seeds, on the surface of said storage node electrode shape, in situ, in a LPCVD chamber, of said cluster tool, using a silane, or disilane flow, below 1.0E-3 moles/m 3 ; growing HSG silicon grains, with a diameter between about 200 to 800 Angstroms, from said HSG silicon seeds, via an anneal procedure, performed in situ, in said LPCVD chamber, of said cluster tool, creating a storage node electrode, comprised of said HSG silicon grains on said storage node electrode shape; forming a capacitor dielectric layer on said storage node electrode; depositing a polysilicon layer; and patterning of said polysilicon layer to form the upper electrode for said stacked, or crown shaped capacitor structure.

Claim 2

Independent Claim 257 words

A method for fabricating a stacked, or crown shaped, capacitor structure, for a DRAM device, on a semiconductor substrate, comprising the steps of: providing a transfer gate transistor, on said semiconductor substrate, comprised of a polysilicon gate structure, on a gate insulator layer, with a source and drain region in regions of said semiconductor substrate, not covered by said polysilicon gate structures; forming a storage node contact hole, in an insulator layer, exposing the top surface of a source region; forming a storage node electrode shape, from an in situ doped, amorphous silicon layer, on the top surface of said insulator layer, and completely filling said storage node contact hole; performing a preclean procedure in a low pressure chamber, located in a cluster tool, to remove native oxide from the surface of said storage node electrode shape; selectively forming hemispherical grain, (HSG), silicon seeds, on the surface of said storage node electrode shape, in situ, in a LPCVD chamber, of said cluster tool, using a silane, or disilane flow, below 1.0E-3 moles/m 3 ; growing HSG silicon grains, with a diameter between about 200 to 800 Angstroms, from said HSG silicon seeds, via an anneal procedure, performed in situ, in said LPCVD chamber, of said cluster tool, creating a storage node electrode, comprised of said HSG silicon grains on said storage node electrode shape; forming a capacitor dielectric layer on said storage node electrode; depositing a polysilicon layer; and patterning of said polysilicon layer to form the upper electrode for said stacked, or crown shaped capacitor structure.

Claim 3

Dependent Claim 75 words

The method of claim 1, wherein said storage node electrode shape is comprised of amorphous silicon, obtained via deposition of an amorphous layer, using an LPCVD procedure, at a temperature below 550° C., to a thickness between about 200 to 10000 Angstroms, and doped in situ via the addition of phosphine, to a silane, or disilane ambient, resulting in said amorphous silicon layer with a surface concentration between about 0 to 4E20 atoms/cm 3 .

Claim 4

Dependent Claim 30 words

The method of claim 1, wherein said storage node electrode shape is formed via an anisotropic RIE procedure, applied to said amorphous silicon layer, using Cl 2 as an etchant.

Claim 5

Dependent Claim 52 words

The method of claim 1, wherein said preclean procedure, used to remove native oxide from the surface of said storage node electrode shape, is performed in said low pressure chamber, using hydrofluoric vapors, at a temperature between about 20 to 25° C., and at a pressure between about 10 to 760 Torr.

Claim 6

Dependent Claim 54 words

The method of claim 1, wherein said HSG silicon seeds are formed on the surface of said storage node electrode shape, in said furnace, at a temperature between about 550 to 580° C., at a pressure below 1.0 torr, using a silane, or a disilane flow at a concentration below 1.0E-3 moles/m 3 .

Claim 7

Dependent Claim 49 words

The method of claim 1, wherein said HSG silicon grains, are created by annealing of said HSG seeds, in said furnace, at a temperature between about 550 to 580° C., at a pressure less than 1.0 torr, in nitrogen ambient, for a time between about 0 to 120 min.

Claim 8

Dependent Claim 37 words

The method of claim 1, wherein said capacitor dielectric layer is Ta 2 O 5 , obtained using R.F. sputtering, or chemical vapor deposition procedures, to an equivalent silicon oxide thickness between about 20 to 80 Angstroms.

Claim 9

Dependent Claim 87 words

The method of claim 1, wherein said capacitor dielectric layer is ONO or NO, at an equivalent silicon dioxide thickness between about 20 to 80 Angstroms, created by an initial thermal oxidation of said thin, heavily doped, polysilicon layer, to form a silicon dioxide layer, between about 0 to 50 Angstroms, followed by a deposition of silicon nitride, to a thickness between about 10 to 100 Angstroms, and thermal oxidation of said silicon nitride layer, creating a silicon oxynitride layer, on the underlying, said silicon dioxide layer.

Claim 10

Dependent Claim 54 words

The method of claim 1, wherein said upper electrode, of said stacked, or crown shaped capacitor structure, is formed via deposition of a polysilicon layer, using LPCVD procedures, at a thickness between about 500 to 10000 Angstroms, and patterning of said polysilicon layer, via an anisotropic RIE procedure, using Cl 2 as a etchant.

Claim 11

Independent Claim 315 words

A method of fabricating a storage node electrode, for a DRAM, stacked, or crown shaped capacitor structure, using in situ furnace procedures, to perform a HF vapor pre-clean procedure, to selectively form HSG silicon seeds, in situ, and to anneal, to form HSG silicon grains, in situ, on the surface of a storage node electrode shape, comprising the steps of: providing a transfer gate transistor on a semiconductor substrate, comprised of a polysilicon gate structure, on an underlying gate insulator layer, and with source and drain region in said semiconductor substrate; depositing an insulator layer on said transfer gate transistor; planarizing said insulator layer; opening a storage node contact hole in said insulator layer, exposing the top surface a source region, in said transfer gate transistor; depositing an in situ doped, amorphous silicon layer on top surface of said insulator layer, and completely filling said storage node contact hole; patterning of said in situ doped, amorphous silicon layer to form an amorphous silicon storage node electrode shape; performing an HF preclean procedure, in a low pressure chamber, in a cluster tool, to remove native oxide from the surface of said amorphous silicon storage node electrode; selectively forming HSG silicon seeds, on the surface of said storage node electrode shape, via a procedure, performed in situ, in a LPCVD chamber, located in said cluster tool, using a silane, or disilane flow, below 1.0 E-3 moles/m 3 ; growing HSG silicon grains, with a diameter between about 200 to 800 Angstroms, from said HSG silicon seeds, via an anneal procedure, performed in situ, in said LPCVD chamber, creating a storage node electrode, comprised of said HSG silicon grains on said amorphous silicon storage node electrode shape; forming a capacitor dielectric layer on said storage node electrode; depositing a polysilicon layer; and patterning of said polysilicon layer to form upper electrode structure, for said DRAM, stacked capacitor structure.

Claim 12

Independent Claim 315 words

A method of fabricating a storage node electrode, for a DRAM, stacked, or crown shaped capacitor structure, using in situ furnace procedures, to perform a HF vapor pre-clean procedure, to selectively form HSG silicon seeds, in situ, and to anneal, to form HSG silicon grains, in situ, on the surface of a storage node electrode shape, comprising the steps of: providing a transfer gate transistor on a semiconductor substrate, comprised of a polysilicon gate structure, on an underlying gate insulator layer, and with source and drain region in said semiconductor substrate; depositing an insulator layer on said transfer gate transistor; planarizing said insulator layer; opening a storage node contact hole in said insulator layer, exposing the top surface a source region, in said transfer gate transistor; depositing an in situ doped, amorphous silicon layer on top surface of said insulator layer, and completely filling said storage node contact hole; patterning of said in situ doped, amorphous silicon layer to form an amorphous silicon storage node electrode shape; performing an HF preclean procedure, in a low pressure chamber, in a cluster tool, to remove native oxide from the surface of said amorphous silicon storage node electrode; selectively forming HSG silicon seeds, on the surface of said storage node electrode shape, via a procedure, performed in situ, in a LPCVD chamber, located in said cluster tool, using a silane, or disilane flow, below 1.0 E-3 moles/m 3 ; growing HSG silicon grains, with a diameter between about 200 to 800 Angstroms, from said HSG silicon seeds, via an anneal procedure, performed in situ, in said LPCVD chamber, creating a storage node electrode, comprised of said HSG silicon grains on said amorphous silicon storage node electrode shape; forming a capacitor dielectric layer on said storage node electrode; depositing a polysilicon layer; and patterning of said polysilicon layer to form upper electrode structure, for said DRAM, stacked capacitor structure.

Claim 13

Dependent Claim 70 words

The method of claim 10, wherein said in situ doped, amorphous silicon layer is obtained via LPCVD procedures, at a temperature below 550° C., to a thickness between about 200 to 10000 Angstroms, with said in situ doped, amorphous silicon having an N type concentration between about 0 to 4E20 atoms/cm 3 , resulting from an in situ doping procedure, using phosphine in a silane, or in a disilane ambient.

Claim 14

Dependent Claim 37 words

The method of claim 10, wherein said in situ doped, amorphous silicon storage node electrode shape is formed via anisotropic RIE procedures, applied to said in situ doped, amorphous silicon layer, using Cl 2 as an etchant.

Claim 15

Dependent Claim 39 words

The method of claim 10, wherein said HF preclean procedure, is performed in said low pressure chamber, of said cluster tool, at a temperature between about 20 to 25° C., at a pressure between about 10 to 760 torr.

Claim 16

Dependent Claim 66 words

The method of claim 10, wherein said HSG silicon seeds are selectively formed, in said LPCVD chamber, of said cluster tool, on the surface of said in situ doped, amorphous silicon storage node electrode shape, at a temperature between about 550 to 580° C., at a pressure less than 1.0 torr, using a silane, or a disilane flow with a concentration below 1.0E-3 mole/m 3 .

Claim 17

Dependent Claim 53 words

The method of claim 10, wherein said HSG silicon grains are formed, in situ in said LPCVD chamber, via annealing of said HSG silicon seeds, at a temperature between about 550 to 580° C., at a pressure below 1.0 torr, in a nitrogen ambient for a time between about 0 to 120 min.

Claim 18

Dependent Claim 80 words

The method of claim 10, wherein said capacitor dielectric layer is ONO, or NO, with an equivalent silicon dioxide thickness between about 20 to 80 Angstroms, created by growing a thin silicon oxide layer on said thin, heavily doped, polysilicon layer, at a thickness between about 0 to 50 Angstroms, depositing between about 10 to 100 Angstroms of a silicon nitride layer, and oxidizing said silicon nitride layer to from a silicon oxynitride layer on said thin silicon oxide layer.

Claim 19

Dependent Claim 32 words

The method of claim 10, wherein said capacitor dielectric layer is Ta 2 O 5 , deposited using R.F. sputtering, to an equivalent silicon dioxide thickness between about 20 to 80 Angstroms.

Claim 20

Dependent Claim 32 words

The method of claim 10, wherein said polysilicon layer is deposited using LPCVD procedures, at a temperature between about 500 to 700° C., to a thickness between about 500 to 2000 Angstroms.

Claim 21

Dependent Claim 25 words

The method of claim 10, wherein said upper polysilicon electrode structure is created via RIE of said polysilicon layer, using Cl 2 as an etchant.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2002-07-26	2003-01-25	2003-07-27	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2006-07-26	2007-01-25	2007-07-27	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2010-07-26	2011-01-25	2011-07-27	$7700.00	Window Closed / Lapsed

Method for fabricating a stacked, or crown shaped, capacitor structure

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