US5691228A
Expired / Lapsed
US
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Semiconductor processing method of making a hemispherical grain (HSG) polysilicon layer
Assignee: Micron Technology Inc
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Filing: 1996-01-18
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Granted: 1997-11-25
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Expires: 2016-01-18
Abstract
Abstract A semiconductor processing method of providing a hemispherical grain polysilicon layer atop a substrate includes, a) providing a substantially amorphous layer of silicon over a substrate at a selected temperature; b) raising the temperature of the substantially amorphous silicon layer to a higher dielectric layer deposition temperature, the temperature raising being effective to transform the amorphous silicon layer into hemispherical grain polysilicon; and c) depositing a dielectric layer over the silicon layer at the higher dielectric deposition temperature. Transformation to hemispherical grain might occur during the temperature rise to the higher dielectric layer deposition temperature, after the higher dielectric layer deposition temperature has been achieved but before dielectric layer deposition, or after the higher dielectric layer deposition temperature has been achieved and during dielectric layer deposition. The temperature raising step can include initially raising the silicon layer temperature to an annealing temperature below the higher dielectric layer deposition temperature, and maintaining the silicon layer at the annealing temperature for a time period effective to increase its degree of surface roughness. Subsequently the silicon layer temperature is raised to the higher dielectric layer deposition temperature, with such further increasing the degree of surface roughness of the resultant silicon layer.
Inventors
- 👤 Er-Xang Ping
- 👤 Randhir P. S. Thakur
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 08:05
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712
Claims Analysis
Total Claims: 39
Claim 1
Independent Claim
78 words
A semiconductor processing method of providing a hemispherical grain polysilicon layer atop a substrate comprising the following steps: providing a substantially amorphous layer of silicon over a substrate at a selected temperature; raising the temperature of the substantially amorphous silicon layer to a higher dielectric layer deposition temperature, the temperature raising being effective to transform the amorphous silicon layer into hemispherical grain polysilicon; and depositing a dielectric layer over the silicon layer at the higher dielectric deposition temperature.
Claim 2
Dependent Claim
78 words
A semiconductor processing method of providing a hemispherical grain polysilicon layer atop a substrate comprising the following steps: providing a substantially amorphous layer of silicon over a substrate at a selected temperature; raising the temperature of the substantially amorphous silicon layer to a higher dielectric layer deposition temperature, the temperature raising being effective to transform the amorphous silicon layer into hemispherical grain polysilicon; and depositing a dielectric layer over the silicon layer at the higher dielectric deposition temperature.
Claim 3
Dependent Claim
27 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 1 wherein the selected temperature is less than or equal to about 550° C.
Claim 4
Dependent Claim
29 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 1 wherein the higher dielectric deposition temperature is from about 650° C. to about 850° C.
Claim 5
Dependent Claim
42 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 1 wherein, the selected temperature is less than or equal to about 550° C.; and the higher dielectric deposition temperature is from about 650° C. to about 850° C.
Claim 6
Dependent Claim
33 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 1 further comprising cleaning the substantially amorphous silicon layer prior to raising the temperature to the higher dielectric deposition temperature.
Claim 7
Dependent Claim
46 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 1 further comprising cleaning the substantially amorphous silicon layer prior to raising the temperature to the higher dielectric deposition temperature, the cleaning comprising lowering the temperature of the substrate below the selected temperature.
Claim 8
Dependent Claim
34 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 1 wherein the step of depositing the dielectric layer comprises providing such layer to predominately comprise Si 3 N 4 .
Claim 9
Dependent Claim
26 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 1 wherein the hemispherical grain layer is substantially formed before the depositing step.
Claim 10
Dependent Claim
26 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 1 wherein the hemispherical grain layer is substantially formed during the depositing step.
Claim 11
Dependent Claim
44 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 1 comprising providing the hemispherical grain polysilicon layer into a desired lower capacitor plate shape, and providing an outer capacitor plate outwardly of the dielectric layer to form a capacitor construction.
Claim 12
Dependent Claim
105 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 1 wherein the substantially amorphous layer as provided has an initial degree of surface roughness, the temperature raising step comprising: initially raising the silicon layer temperature to an annealing temperature below the higher dielectric layer deposition temperature, and maintaining the silicon layer at the annealing temperature for a time period effective to increase the degree of surface roughness from the initial degree; and subsequently raising the silicon layer temperature to the higher dielectric layer deposition temperature, the subsequent temperature raising further increasing the degree of surface roughness of the resultant silicon layer.
Claim 13
Dependent Claim
37 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 11 further comprising cleaning the silicon layer after the intermediate temperature annealing before subsequently raising the temperature to the higher dielectric layer deposition temperature.
Claim 14
Dependent Claim
102 words
A semiconductor processing method of providing a hemispherical grain polysilicon layer atop a substrate comprising the following steps: providing a substantially amorphous layer of silicon over a substrate at a selected temperature; raising the temperature of the substantially amorphous silicon layer to a higher dielectric layer deposition temperature and maintaining the silicon layer at the higher deposition temperature for a selected period of time, the selected period of time and the higher temperature in combination being effective to transform the amorphous silicon layer into hemispherical grain polysilicon; and depositing a dielectric layer over the silicon layer at the higher dielectric deposition temperature.
Claim 15
Dependent Claim
102 words
A semiconductor processing method of providing a hemispherical grain polysilicon layer atop a substrate comprising the following steps: providing a substantially amorphous layer of silicon over a substrate at a selected temperature; raising the temperature of the substantially amorphous silicon layer to a higher dielectric layer deposition temperature and maintaining the silicon layer at the higher deposition temperature for a selected period of time, the selected period of time and the higher temperature in combination being effective to transform the amorphous silicon layer into hemispherical grain polysilicon; and depositing a dielectric layer over the silicon layer at the higher dielectric deposition temperature.
Claim 16
Dependent Claim
27 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 13 wherein the selected temperature is less than or equal to about 550° C.
Claim 17
Dependent Claim
29 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 13 wherein the higher dielectric deposition temperature is from about 650° C. to about 850° C.
Claim 18
Dependent Claim
42 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 13 wherein, the selected temperature is less than or equal to about 550° C.; and the higher dielectric deposition temperature is from about 650° C. to about 850° C.
Claim 19
Dependent Claim
33 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 13 further comprising cleaning the substantially amorphous silicon layer prior to raising the temperature to the higher dielectric deposition temperature.
Claim 20
Dependent Claim
46 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 13 further comprising cleaning the substantially amorphous silicon layer prior to raising the temperature to the higher dielectric deposition temperature, the cleaning comprising lowering the temperature of the substrate below the selected temperature.
Claim 21
Dependent Claim
34 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 13 wherein the step of depositing the dielectric layer comprises providing such layer to predominately comprise Si 3 N 4 .
Claim 22
Dependent Claim
26 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 13 wherein the hemispherical grain layer is substantially formed before the depositing step.
Claim 23
Dependent Claim
26 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 13 wherein the hemispherical grain layer is substantially formed during the depositing step.
Claim 24
Dependent Claim
44 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 13 comprising providing the hemispherical grain polysilicon layer into a desired lower capacitor plate shape, and providing an outer capacitor plate outwardly of the dielectric layer to form a capacitor construction.
Claim 25
Dependent Claim
105 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 13 wherein the substantially amorphous layer as provided has an initial degree of surface roughness, the temperature raising step comprising: initially raising the silicon layer temperature to an annealing temperature below the higher dielectric layer deposition temperature, and maintaining the silicon layer at the annealing temperature for a time period effective to increase the degree of surface roughness from the initial degree; and subsequently raising the silicon layer temperature to the higher dielectric layer deposition temperature, the subsequent temperature raising further increasing the degree of surface roughness of the resultant silicon layer.
Claim 26
Dependent Claim
37 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 23 further comprising cleaning the silicon layer after the intermediate temperature annealing before subsequently raising the temperature to the higher dielectric layer deposition temperature.
Claim 27
Dependent Claim
94 words
A semiconductor processing method of providing a hemispherical grain polysilicon layer atop a substrate comprising the following steps: providing a substantially amorphous layer of silicon over a substrate at a selected temperature; raising the temperature of the substantially amorphous silicon layer to a higher dielectric layer deposition temperature over a selected period of time, the selected period of time and the temperature increase in combination being effective to transform the amorphous silicon layer into hemispherical grain polysilicon; and depositing a dielectric layer over the hemispherical grain polysilicon layer at the higher dielectric deposition temperature.
Claim 28
Dependent Claim
94 words
A semiconductor processing method of providing a hemispherical grain polysilicon layer atop a substrate comprising the following steps: providing a substantially amorphous layer of silicon over a substrate at a selected temperature; raising the temperature of the substantially amorphous silicon layer to a higher dielectric layer deposition temperature over a selected period of time, the selected period of time and the temperature increase in combination being effective to transform the amorphous silicon layer into hemispherical grain polysilicon; and depositing a dielectric layer over the hemispherical grain polysilicon layer at the higher dielectric deposition temperature.
Claim 29
Dependent Claim
29 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 25 wherein the selected period of time is from about 5 minutes to about 20 minutes.
Claim 30
Dependent Claim
27 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 25 wherein the selected temperature is less than or equal to about 550° C.
Claim 31
Dependent Claim
29 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 25 wherein the higher dielectric deposition temperature is from about 650° C. to about 850° C.
Claim 32
Dependent Claim
42 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 25 wherein, the selected temperature is less than or equal to about 550° C.; and the higher dielectric deposition temperature is from about 650° C. to about 850° C.
Claim 33
Dependent Claim
56 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 25 wherein, the selected temperature is less than or equal to about 550° C.; the higher dielectric deposition temperature is from about 650° C. to about 850° C.; and the selected period of time is from about 5 minutes to about 20 minutes.
Claim 34
Dependent Claim
33 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 25 further comprising cleaning the substantially amorphous silicon layer prior to raising the temperature to the higher dielectric deposition temperature.
Claim 35
Dependent Claim
46 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 25 further comprising cleaning the substantially amorphous silicon layer prior to raising the temperature to the higher dielectric deposition temperature, the cleaning comprising lowering the temperature of the substrate below the selected temperature.
Claim 36
Dependent Claim
34 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 25 wherein the step of depositing the dielectric layer comprises providing such layer to predominately comprise Si 3 N 4 .
Claim 37
Dependent Claim
44 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 25 comprising providing the hemispherical grain polysilicon layer into a desired lower capacitor plate shape, and providing an outer capacitor plate outwardly of the dielectric layer to form a capacitor construction.
Claim 38
Dependent Claim
105 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 25 wherein the substantially amorphous layer as provided has an initial degree of surface roughness, the temperature raising step comprising: initially raising the silicon layer temperature to an annealing temperature below the higher dielectric layer deposition temperature, and maintaining the silicon layer at the annealing temperature for a time period effective to increase the degree of surface roughness from the initial degree; and subsequently raising the silicon layer temperature to the higher dielectric layer deposition temperature, the subsequent temperature raising further increasing the degree of surface roughness of the resultant silicon layer.
Claim 39
Dependent Claim
37 words
The semiconductor processing method of providing a hemispherical grain polysilicon layer of claim 35 further comprising cleaning the silicon layer after the intermediate temperature annealing before subsequently raising the temperature to the higher dielectric layer deposition temperature.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-11-24 | 2001-05-26 | 2001-11-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-11-24 | 2005-05-26 | 2005-11-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-11-24 | 2009-05-26 | 2009-11-25 | $7700.00 | Window Closed / Lapsed |