US5634974A
Expired / Lapsed
US
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Method for forming hemispherical grained silicon
Assignee: AG Associates Israel Ltd
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Filing: 1995-11-03
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Granted: 1997-06-03
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Expires: 2015-11-03
Abstract
Abstract A method of forming HSG is disclosed, in which a layer of starting material is formed on a wafer, the layer of starting material is seeded with a species and the seeded layer is annealed. The seeding and annealing steps can be performed under different conditions and can be varied independently of each other.
Inventors
- 👤 Ronald A. Weimer
- 👤 Randhir P. S. Thakur
- 👤 Avishai Kepten
- 👤 Michael Sendler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 02:56
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B25/00; C30B25/02; C30B25/18; H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712; H10D1/716; Y; Y10; Y10S; Y10S438/00; Y10S438/964
Claims Analysis
Total Claims: 78
Claim 1
Independent Claim
89 words
A method of forming HSG, comprising the steps of: depositing a layer of starting material on a wafer using a method from the group consisting of plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition and rapid thermal chemical vapor deposition; seeding the layer of starting material with a species, the seeding step being performed under a first value for a process parameter; and annealing the seeded layer, the annealing step being performed under a second value for the process parameter, wherein the first and second values differ.
Claim 2
Independent Claim
89 words
A method of forming HSG, comprising the steps of: depositing a layer of starting material on a wafer using a method from the group consisting of plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition and rapid thermal chemical vapor deposition; seeding the layer of starting material with a species, the seeding step being performed under a first value for a process parameter; and annealing the seeded layer, the annealing step being performed under a second value for the process parameter, wherein the first and second values differ.
Claim 3
Dependent Claim
43 words
The method of claim 1 wherein the seeding step is performed under a first range of values for the process parameter and the annealing step is performed under a second range values for the process parameter, wherein the first and second ranges differ.
Claim 4
Dependent Claim
22 words
The method of claim 1 wherein the layer of starting material has a uniform thickness over a significant area of the wafer.
Claim 5
Dependent Claim
14 words
The method of claim 1 wherein the layer of starting material comprises amorphous silicon.
Claim 6
Dependent Claim
15 words
The method of claim 4 wherein the layer of starting material comprises doped amorphous silicon.
Claim 7
Dependent Claim
35 words
The method of claim 1 wherein the seeding step is performed in a first chamber, the layer of starting material is formed in a second chamber and the first and second chambers are different chambers.
Claim 8
Dependent Claim
19 words
The method of claim 1 wherein the seeding step comprises irradiating the layer of starting material with the species.
Claim 9
Dependent Claim
21 words
The method of claim 7 wherein the seeding step is performed at a temperature of approximately 100 to 1000 degrees Celsius.
Claim 10
Dependent Claim
20 words
The method of claim 7 wherein the seeding step is performed at a pressure of less than approximately 200 torr.
Claim 11
Dependent Claim
21 words
The method of claim 7 wherein the seeding step is performed at a flow rate of approximately 1 to 500 sccm.
Claim 12
Dependent Claim
22 words
The method of claim 7 wherein the seeding step is performed for a time period of approximately 1 second to 60 minutes.
Claim 13
Dependent Claim
32 words
The method of claim 7 wherein the species is selected from the group consisting of SiH 2 , Si 2 H 6 , SiH 2 Cl 2 and all other silicon hydrides.
Claim 14
Dependent Claim
41 words
The method of claim 7 wherein the species is selected from the group consisting of elements from Group IV of the Periodic Table of Elements and compounds formed from elements in Groups III and V of the Periodic Table of Elements.
Claim 15
Dependent Claim
57 words
The method of claim 7 wherein the seeding step is performed at a temperature of approximately 500 to 700 degrees Celsius with a flow rate of approximately 10 to 100 sccm and the annealing step is performed at a temperature of approximately 500 to 800 degrees Celsius for a time period of approximately 5 to 100 seconds.
Claim 16
Dependent Claim
19 words
The method of claim 1 wherein the seeding step comprises doping the layer of starting material with the species.
Claim 17
Dependent Claim
11 words
The method of claim 15 wherein the doping comprises ion implantation.
Claim 18
Dependent Claim
12 words
The method of claim 15 wherein the doping comprises vapor phase doping.
Claim 19
Dependent Claim
28 words
The method of claim 15 wherein the dopant is selected from the group consisting of elements from Group III and Group V of the Periodic Table of Elements.
Claim 20
Dependent Claim
21 words
The method of claim 1 wherein the annealing step is performed at a temperature of approximately 200 to 1500 degrees Celsius.
Claim 21
Dependent Claim
20 words
The method of claim 1 wherein the annealing step is performed at a pressure of less than approximately 1 atm.
Claim 22
Dependent Claim
22 words
The method of claim 1 wherein the annealing step is performed for a time period of approximately 1 second to 5 hours.
Claim 23
Independent Claim
66 words
A method of forming HSG, comprising the steps of: forming a layer of starting material on a wafer; irradiating the layer of starting material with an undiluted hydride, the irradiating step being performed under a first value for a process parameter; and annealing the seeded layer, the annealing step being performed under a second value for the process parameter, wherein the first and second values differ.
Claim 24
Independent Claim
66 words
A method of forming HSG, comprising the steps of: forming a layer of starting material on a wafer; irradiating the layer of starting material with an undiluted hydride, the irradiating step being performed under a first value for a process parameter; and annealing the seeded layer, the annealing step being performed under a second value for the process parameter, wherein the first and second values differ.
Claim 25
Independent Claim
93 words
A method of forming HSG, comprising the steps of: forming a layer of starting material on a wafer; seeding the layer of starting material with a species, the seeding step being performed under a first value for a process parameter; annealing the seeded layer, the annealing step being performed under a second value for the process parameter, the first and second values being different; and wherein the seeding step is performed in a first chamber, the annealing step is performed in a second chamber, and the first and second chambers are different chambers.
Claim 26
Independent Claim
93 words
A method of forming HSG, comprising the steps of: forming a layer of starting material on a wafer; seeding the layer of starting material with a species, the seeding step being performed under a first value for a process parameter; annealing the seeded layer, the annealing step being performed under a second value for the process parameter, the first and second values being different; and wherein the seeding step is performed in a first chamber, the annealing step is performed in a second chamber, and the first and second chambers are different chambers.
Claim 27
Dependent Claim
24 words
The method of claim 23, further comprising the step of removing a native oxide layer from the seeded layer prior to the annealing step.
Claim 28
Dependent Claim
48 words
The method of claim 24, wherein the step of removing the native oxide layer from the seeded layer comprises performing an HF dip to the wafer after the seeding step, the step of performing the HF dip being performed prior to loading the wafer into the second chamber.
Claim 29
Dependent Claim
56 words
The method of claim 24, further comprising the step of transporting the wafer from the first chamber to the second chamber in a controlled ambient environment after the seeding step and before the annealing step, wherein the step of removing the native oxide layer from the seeded layer comprises subjecting the wafer to a vapor cleaning.
Claim 30
Dependent Claim
27 words
The method of claim 26, wherein the step of removing the native oxide layer from the seeded layer comprises subjecting the wafer to an HF vapor cleaning.
Claim 31
Dependent Claim
33 words
The method of claim 27 wherein the dielectric layer is formed in a first chamber, the annealing step is performed in a second chamber and the first and second chambers are different chambers.
Claim 32
Dependent Claim
21 words
The method of claim 26, wherein the controlled ambient environment is a vacuum maintained around the wafer during the transporting step.
Claim 33
Dependent Claim
24 words
The method of claim 26, wherein the controlled ambient environment is an N 2 purged ambient maintained around the wafer during the transporting step.
Claim 34
Dependent Claim
35 words
The method of claim 23, further comprising the step of transporting the wafer from the first chamber to the second chamber in a controlled ambient environment after the seeding step and before the annealing step.
Claim 35
Dependent Claim
21 words
The method of claim 31, wherein the controlled ambient environment is a vacuum maintained around the wafer during the transporting step.
Claim 36
Dependent Claim
24 words
The method of claim 31, wherein the controlled ambient environment is an N 2 purged ambient maintained around the wafer during the transporting step.
Claim 37
Dependent Claim
26 words
The method of claim 23, further comprising the step of removing a native oxide layer from the layer of starting material prior to the seeding step.
Claim 38
Dependent Claim
56 words
The method of claim 34, wherein the step of removing the native oxide layer from the layer of starting material comprises performing an HF dip to the wafer after the step of forming the layer of starting material, the step of performing the HF dip being performed prior to loading the wafer into the first chamber.
Claim 39
Dependent Claim
26 words
The method of claim 35, wherein the layer of starting material is formed in a third chamber that is different from the first and second chambers.
Claim 40
Dependent Claim
85 words
The method of claim 34, wherein the layer of starting material is formed in a third chamber that is different from the first and second chambers, further comprising the step of transporting the wafer from the third chamber to the first chamber in a controlled ambient environment after the step of forming the layer of starting material and before the seeding step, wherein the step of removing the native oxide layer from the layer of starting material comprises subjecting the wafer to a vapor cleaning.
Claim 41
Dependent Claim
21 words
The method of claim 37, wherein the controlled ambient environment is a vacuum maintained around the wafer during the transporting step.
Claim 42
Dependent Claim
24 words
The method of claim 37, wherein the controlled ambient environment is an N 2 purged ambient maintained around the wafer during the transporting step.
Claim 43
Dependent Claim
29 words
The method of claim 37, wherein the step of removing the native oxide layer from the layer of starting material comprises subjecting the wafer to an HF vapor cleaning.
Claim 44
Dependent Claim
62 words
The method of claim 23, wherein the layer of starting material is formed in a third chamber that is different from the first and second chambers, further comprising the step of transporting the wafer from the third chamber to the first chamber in a controlled ambient environment after the step of forming the layer of starting material and before the seeding step.
Claim 45
Dependent Claim
21 words
The method of claim 41, wherein the controlled ambient environment is a vacuum maintained around the wafer during the transporting step.
Claim 46
Dependent Claim
24 words
The method of claim 41, wherein the controlled ambient environment is an N 2 purged ambient maintained around the wafer during the transporting step.
Claim 47
Independent Claim
72 words
A method of forming HSG, comprising the steps of: forming a layer of starting material on a wafer; seeding the layer of starting material with a species, the seeding step being performed under a first value for a process parameter; annealing the seeded layer, the annealing step being performed under a second value for process parameter, wherein the first and second values differ; and forming a dielectric layer above the annealed layer.
Claim 48
Independent Claim
72 words
A method of forming HSG, comprising the steps of: forming a layer of starting material on a wafer; seeding the layer of starting material with a species, the seeding step being performed under a first value for a process parameter; annealing the seeded layer, the annealing step being performed under a second value for process parameter, wherein the first and second values differ; and forming a dielectric layer above the annealed layer.
Claim 49
Dependent Claim
26 words
The method of claim 44, further comprising the step of removing a native oxide layer from the layer of starting material prior to the seeding step.
Claim 50
Dependent Claim
36 words
The method of claim 45, wherein the step of removing the native oxide layer from the layer of starting material comprises subjecting the wafer to an HF dip after the step of forming the starting layer.
Claim 51
Dependent Claim
50 words
The method of claim 46, wherein the step of forming the layer of starting material and the step of seeding the layer of starting material are respectively performed in first and second different chambers, and the HF dip step is performed prior to loading the wafer into the second chamber.
Claim 52
Dependent Claim
93 words
The method of claim 45, wherein the step of forming the layer of starting material and the step of seeding the layer of starting material are respectively performed in first and second different chambers, further comprising the step of transporting the wafer from the first chamber to the second chamber in a controlled ambient environment after the step of forming the layer of starting material and before the seeding step, wherein the step of removing the native oxide layer from the layer of starting material comprises subjecting the wafer to a vapor cleaning.
Claim 53
Dependent Claim
21 words
The method of claim 48, wherein the controlled ambient environment is a vacuum maintained around the wafer during the transporting step.
Claim 54
Dependent Claim
24 words
The method of claim 48, wherein the controlled ambient environment is an N 2 purged ambient maintained around the wafer during the transporting step.
Claim 55
Dependent Claim
29 words
The method of claim 48, wherein the step of removing the native oxide layer from the layer of starting material comprises subjecting the wafer to an HF vapor cleaning.
Claim 56
Dependent Claim
70 words
The method of claim 44, wherein the step of forming the layer of starting material and the step of seeding the layer of starting material are respectively performed in first and second different chambers, further comprising the step of transporting the wafer from the first chamber to the second chamber in a controlled ambient environment after the step of forming the layer of starting material and before the seeding step.
Claim 57
Dependent Claim
21 words
The method of claim 52, wherein the controlled ambient environment is a vacuum maintained around the wafer during the transporting step.
Claim 58
Dependent Claim
24 words
The method of claim 52, wherein the controlled ambient environment is an N 2 purged ambient maintained around the wafer during the transporting step.
Claim 59
Dependent Claim
24 words
The method of claim 44, further comprising the step of removing a native oxide layer from the seeded layer prior to the annealing step.
Claim 60
Dependent Claim
30 words
The method of claim 55, wherein the step of removing the native oxide layer from the seeded layer comprises subjecting the wafer to an HF dip after the seeding step.
Claim 61
Dependent Claim
48 words
The method of claim 56, wherein the step of seeding the layer of starting material and the step of annealing the seeded layer are respectively performed in first and second different chambers, and the HF dip step is performed prior to loading the wafer into the second chamber.
Claim 62
Dependent Claim
89 words
The method of claim 55, wherein the step of seeding the layer of starting material and the step of annealing the seeded layer are respectively performed in first and second different chambers, further comprising the step of transporting the wafer from the first chamber to the second chamber in a controlled ambient environment after the step of seeding the layer of starting material and before the annealing step, wherein the step of removing the native oxide layer from the seeded layer comprises subjecting the wafer to a vapor cleaning.
Claim 63
Dependent Claim
21 words
The method of claim 58, wherein the controlled ambient environment is a vacuum maintained around the wafer during the transporting step.
Claim 64
Dependent Claim
24 words
The method of claim 58, wherein the controlled ambient environment is an N 2 purged ambient maintained around the wafer during the transporting step.
Claim 65
Dependent Claim
27 words
The method of claim 58, wherein the step of removing the native oxide layer from the seeded layer comprises subjecting the wafer to an HF vapor cleaning.
Claim 66
Dependent Claim
68 words
The method of claim 44, wherein the step of seeding the layer of starting material and the step of annealing the seeded layer are respectively performed in first and second different chambers, further comprising the step of transporting the wafer from the first chamber to the second chamber in a controlled ambient environment after the step of seeding the layer of starting material and before the annealing step.
Claim 67
Dependent Claim
21 words
The method of claim 62, wherein the controlled ambient environment is a vacuum maintained around the wafer during the transporting step.
Claim 68
Dependent Claim
24 words
The method of claim 62, wherein the controlled ambient environment is an N 2 purged ambient maintained around the wafer during the transporting step.
Claim 69
Dependent Claim
28 words
The method of claim 44, further comprising the step of removing a native oxide layer from the annealed layer prior to the step of forming the dielectric layer.
Claim 70
Dependent Claim
30 words
The method of claim 65, wherein the step of removing the native oxide layer from the annealed layer comprises subjecting the wafer to an HF dip after the annealing step.
Claim 71
Dependent Claim
46 words
The method of claim 66, wherein the step of annealing the seeded layer and the step of forming the dielectric layer are respectively performed in first and second different chambers, and the HF dip step is performed prior to loading the wafer into the second chamber.
Claim 72
Dependent Claim
89 words
The method of claim 65, wherein the step of annealing the seeded layer and the step of forming the dielectric layer are respectively performed in first and second different chambers, further comprising the step of transporting the wafer from the first chamber to the second chamber in a controlled ambient environment after the step of annealing the seeded layer and before the step of forming the dielectric layer, wherein the step of removing the native oxide layer from the annealed layer comprises subjecting the wafer to a vapor cleaning.
Claim 73
Dependent Claim
21 words
The method of claim 68, wherein the controlled ambient environment is a vacuum maintained around the wafer during the transporting step.
Claim 74
Dependent Claim
24 words
The method of claim 68, wherein the controlled ambient environment is an N 2 purged ambient maintained around the wafer during the transporting step.
Claim 75
Dependent Claim
27 words
The method of claim 68, wherein the step of removing the native oxide layer from the seeded layer comprises subjecting the wafer to an HF vapor cleaning.
Claim 76
Dependent Claim
68 words
The method of claim 44, wherein the step of annealing the seeded layer and the step of forming the dielectric layer are respectively performed in first and second different chambers, further comprising the step of transporting the wafer from the first chamber to the second chamber in a controlled ambient environment after the step of annealing the seeded layer and before the step of forming the dielectric layer.
Claim 77
Dependent Claim
21 words
The method of claim 72, wherein the controlled ambient environment is a vacuum maintained around the wafer during the transporting step.
Claim 78
Dependent Claim
24 words
The method of claim 72, wherein the controlled ambient environment is an N 2 purged ambient maintained around the wafer during the transporting step.
References Cited (Backward Citations)
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