US5656531A
Expired / Lapsed
US
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Method to form hemi-spherical grain (HSG) silicon from amorphous silicon
Assignee: Round Rock Research LLC
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Filing: 1995-12-15
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Granted: 1997-08-12
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Expires: 2015-12-15
Abstract
Abstract An embodiment of the present invention develops a process for forming Hemi-Spherical Grained silicon by the steps of: forming amorphous silicon from a gas source comprising at least one of dichlorosilane, disilane or trisilane, wherein the amorphous silicon comprising at least one impurity doped amorphous portion, the amorphous silicon is deposited at a deposition temperature no greater than 525° C; and annealing the amorphous silicon for a sufficient amount of time and at an elevated annealing temperature, thereby transforming the amorphous silicon into the Hemi-Spherical Grained silicon.
Inventors
- 👤 Randhir P. S. Thakur
- 👤 Lyle D. Breiner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:48
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3451; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10D1/716; Y; Y10; Y10S; Y10S438/00; Y10S438/964
Claims Analysis
Total Claims: 51
Claim 1
Independent Claim
80 words
A process for forming Hemi-Spherical Grained silicon comprising the steps of: forming amorphous silicon from a gas source comprising at least one of dichlorosilane, disilane or trisilane, wherein said amorphous silicon comprising at least one impurity doped amorphous portion, said amorphous silicon is deposited at a deposition temperature no greater than 525° C; and annealing said amorphous silicon for a sufficient amount of time and at an elevated annealing temperature, thereby transforming said amorphous silicon into said Hemi-Spherical Grained silicon.
Claim 2
Dependent Claim
80 words
A process for forming Hemi-Spherical Grained silicon comprising the steps of: forming amorphous silicon from a gas source comprising at least one of dichlorosilane, disilane or trisilane, wherein said amorphous silicon comprising at least one impurity doped amorphous portion, said amorphous silicon is deposited at a deposition temperature no greater than 525° C; and annealing said amorphous silicon for a sufficient amount of time and at an elevated annealing temperature, thereby transforming said amorphous silicon into said Hemi-Spherical Grained silicon.
Claim 3
Dependent Claim
40 words
The process as recited in claim 1, wherein the thickness of said amorphous silicon is at a sufficient thickness such that during said step of annealing the grain formation of said HSG silicon consumes substantially all of said amorphous silicon.
Claim 4
Dependent Claim
18 words
The process as recited in claim 1, wherein said deposition temperature ranges from 450° C to 525° C.
Claim 5
Dependent Claim
19 words
The process as recited in claim 1, wherein said elevated annealing temperature ranges from 500° C to 800° C.
Claim 6
Dependent Claim
18 words
The process as recited in claim 1, wherein said amorphous silicon comprises more than one amorphous silicon layer.
Claim 7
Dependent Claim
20 words
The process as recited in claim 5, wherein each said amorphous silicon layer has a thickness up to 500 Angstroms.
Claim 8
Dependent Claim
24 words
The process as recited in claim 5, wherein each said amorphous silicon layer has a thickness ranging from 200 Angstroms up to 500 Angstroms.
Claim 9
Dependent Claim
28 words
The process as recited in claim 1, wherein said amorphous silicon comprises multiple amorphous silicon layers wherein every other layer is an in-situ conductively doped amorphous silicon layer.
Claim 10
Dependent Claim
22 words
The process as recited in claim 8, wherein said in-situ conductively doped amorphous silicon layer is doped via a hydrogen dopant source.
Claim 11
Dependent Claim
22 words
The process as recited in claim 9, wherein said dopant source comprises at least one of PH 3 or AsH 3 .
Claim 12
Dependent Claim
25 words
The process as recited in claim 1, wherein said step of annealing is performed at a pressure of 1×10 -1 Torr to 1×10 -6 Torr.
Claim 13
Dependent Claim
17 words
The process as recited in claim 1, wherein said gas source is diluted with an inert gas.
Claim 14
Dependent Claim
26 words
The process as recited in claim 12, wherein said inert gas is a gas selected from the group consisting of He, Ar, and N 2 .
Claim 15
Dependent Claim
17 words
The process as recited in claim 1, wherein said steps are performed in a furnace type reactor.
Claim 16
Dependent Claim
21 words
The process as recited in claim 1, wherein said steps are performed in a Rapid Thermal Chemical Vapor Deposition type reactor.
Claim 17
Dependent Claim
17 words
The process as recited in claim 1, wherein said steps are performed in a plasma type reactor.
Claim 18
Dependent Claim
17 words
The process as recited in claim 1, wherein said process is a dynamic random access device process.
Claim 19
Dependent Claim
19 words
The process as recited in claim 1, wherein said process is an erasable programmable read only memory device process.
Claim 20
Dependent Claim
18 words
The process as recited in claim 1, wherein said HSG silicon is used to form a storage electrode.
Claim 21
Dependent Claim
19 words
The process as recited in claim 19, wherein said storage electrode comprises a capacitor plate in a memory cell.
Claim 22
Dependent Claim
21 words
The process as recited in claim 19, whereto said storage electrode comprises a floating gate in a floating gate memory device.
Claim 23
Dependent Claim
97 words
A process for forming a Hemi-Spherical Grained silicon storage capacitor electrode comprising the steps of: forming amorphous silicon from a gas source comprising at least one of dichlorosilane, disilane or trisilane, wherein said amorphous silicon comprises at least one impurity doped amorphous portion, said amorphous silicon is deposited at a deposition temperature no greater than 525° C; annealing said amorphous silicon for a sufficient amount of time and at an elevated annealing temperature, thereby transforming said amorphous silicon into said Hemi-Spherical Grained silicon; and patterning said Hemi-Spherical Grained silicon into said Hemi-Spherical Grained silicon storage capacitor electrode.
Claim 24
Dependent Claim
97 words
A process for forming a Hemi-Spherical Grained silicon storage capacitor electrode comprising the steps of: forming amorphous silicon from a gas source comprising at least one of dichlorosilane, disilane or trisilane, wherein said amorphous silicon comprises at least one impurity doped amorphous portion, said amorphous silicon is deposited at a deposition temperature no greater than 525° C; annealing said amorphous silicon for a sufficient amount of time and at an elevated annealing temperature, thereby transforming said amorphous silicon into said Hemi-Spherical Grained silicon; and patterning said Hemi-Spherical Grained silicon into said Hemi-Spherical Grained silicon storage capacitor electrode.
Claim 25
Dependent Claim
40 words
The process as recited in claim 22, wherein the thickness of said amorphous silicon is at a sufficient thickness such that during said step of annealing the grain formation of said HSG silicon consumes substantially all of said amorphous silicon.
Claim 26
Dependent Claim
18 words
The process as recited in claim 22, wherein said deposition temperature ranges from 450° C to 525° C.
Claim 27
Dependent Claim
19 words
The process as recited in claim 22, wherein said elevated annealing temperature ranges from 500° C to 800° C.
Claim 28
Dependent Claim
18 words
The process as recited in claim 22, wherein said amorphous silicon comprises more than one amorphous silicon layer.
Claim 29
Dependent Claim
20 words
The process as recited in claim 26, wherein each said amorphous silicon layer has a thickness up to 500 Angstroms.
Claim 30
Dependent Claim
24 words
The process as recited in claim 26, wherein each said amorphous silicon layer has a thickness ranging from 200 Angstroms up to 500 Angstroms.
Claim 31
Dependent Claim
28 words
The process as recited in claim 22, wherein said amorphous silicon comprises multiple amorphous silicon layers wherein every other layer is an in-situ conductively doped amorphous silicon layer.
Claim 32
Dependent Claim
22 words
The process as recited in claim 22, wherein said in-situ conductively doped amorphous silicon layer is doped via a hydrogen dopant source.
Claim 33
Dependent Claim
22 words
The process as recited in claim 30, wherein said dopant source comprises at least one of PH 3 or ASH 3 .
Claim 34
Dependent Claim
25 words
The process as recited in claim 22, wherein said step of annealing is performed at a pressure of 1×10 -1 Torr to 1×10 -6 Torr.
Claim 35
Dependent Claim
17 words
The process as recited in claim 22, wherein said gas source is diluted with an inert gas.
Claim 36
Dependent Claim
26 words
The process as recited in claim 33, wherein said inert gas is a gas selected from the group consisting of He, Ar, and N 2 .
Claim 37
Dependent Claim
17 words
The process as recited in claim 22, wherein said steps are performed in a furnace type reactor.
Claim 38
Dependent Claim
21 words
The process as recited in claim 22, wherein said steps are performed in a Rapid Thermal Chemical Vapor Deposition type reactor.
Claim 39
Dependent Claim
17 words
The process as recited in claim 22, wherein said steps are performed in a plasma type reactor.
Claim 40
Dependent Claim
17 words
The process as recited in claim 22, wherein said process is a dynamic random access device process.
Claim 41
Dependent Claim
19 words
The process as recited in claim 22, wherein said process is an erasable programmable read only memory device process.
Claim 42
Dependent Claim
96 words
A process for forming Hemi-Spherical Grained silicon comprising the steps of: forming multiple amorphous silicon layers from any combinations of gas sources selected from the group consisting of dichlorosilane, disilane or trisilane, wherein at least one of said amorphous silicon layers comprise an impurity doped amorphous portion, said amorphous silicon layers are deposited at a deposition temperature no greater than 525° C; and annealing said amorphous silicon layers for a sufficient amount of time and at an elevated annealing temperature, thereby transforming at least a portion of said amorphous silicon layers into said Hemi-Spherical Grained silicon.
Claim 43
Dependent Claim
96 words
A process for forming Hemi-Spherical Grained silicon comprising the steps of: forming multiple amorphous silicon layers from any combinations of gas sources selected from the group consisting of dichlorosilane, disilane or trisilane, wherein at least one of said amorphous silicon layers comprise an impurity doped amorphous portion, said amorphous silicon layers are deposited at a deposition temperature no greater than 525° C; and annealing said amorphous silicon layers for a sufficient amount of time and at an elevated annealing temperature, thereby transforming at least a portion of said amorphous silicon layers into said Hemi-Spherical Grained silicon.
Claim 44
Dependent Claim
46 words
The process as recited in claim 40, wherein the total thickness of said amorphous silicon layers is at a sufficient thickness such that during said step of annealing, the grain formation of said HSG silicon consumes substantially the said total thickness of said amorphous silicon layers.
Claim 45
Dependent Claim
18 words
The process as recited in claim 40, wherein said deposition temperature ranges from 450° C to 525° C.
Claim 46
Dependent Claim
19 words
The process as recited in claim 40, wherein said elevated annealing temperature ranges from 500° C to 800° C.
Claim 47
Dependent Claim
111 words
A process for forming a Hemi-Spherical Grained silicon storage electrode comprising the steps of: forming multiple amorphous silicon layers from any combinations of gas sources selected from the group consisting of dichlorosilane, disilane or trisilane, wherein at least one of said amorphous silicon layers comprise an impurity doped amorphous portion, said amorphous silicon layers are deposited at a deposition temperature no greater than 525° C; annealing said amorphous silicon layers for a sufficient amount of time and at an elevated annealing temperature, thereby transforming at least a portion of said amorphous silicon layers into said Hemi-Spherical Grained silicon; and patterning said Hemi-Spherical Grained silicon into said Hemi-Spherical Grained silicon storage electrode.
Claim 48
Dependent Claim
111 words
A process for forming a Hemi-Spherical Grained silicon storage electrode comprising the steps of: forming multiple amorphous silicon layers from any combinations of gas sources selected from the group consisting of dichlorosilane, disilane or trisilane, wherein at least one of said amorphous silicon layers comprise an impurity doped amorphous portion, said amorphous silicon layers are deposited at a deposition temperature no greater than 525° C; annealing said amorphous silicon layers for a sufficient amount of time and at an elevated annealing temperature, thereby transforming at least a portion of said amorphous silicon layers into said Hemi-Spherical Grained silicon; and patterning said Hemi-Spherical Grained silicon into said Hemi-Spherical Grained silicon storage electrode.
Claim 49
Dependent Claim
46 words
The process as recited in claim 44, wherein the total thickness of said amorphous silicon layers is at a sufficient thickness such that during said step of annealing, the grain formation of said HSG silicon consumes substantially the said total thickness of said amorphous silicon layers.
Claim 50
Dependent Claim
18 words
The process as recited in claim 44, wherein said deposition temperature ranges from 450° C to 525° C.
Claim 51
Dependent Claim
19 words
The process as recited in claim 44, wherein said elevated annealing temperature ranges from 500° C to 800° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-08-11 | 2001-02-10 | 2001-08-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-08-11 | 2005-02-10 | 2005-08-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-08-11 | 2009-02-10 | 2009-08-12 | $7700.00 | Window Closed / Lapsed |