Patent US5929475A successfully refreshed from Google Patents.
US5929475A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Capacitor for integrated circuit and its fabrication method
Assignee: Panasonic Holdings Corp
•
Filing: 1995-12-15
•
Granted: 1999-07-27
•
Expires: 2015-12-15
Abstract
Abstract A method for fabricating a capacitor for an integrated circuit, comprising the steps of forming a titanium film for an adhesion layer over a substrate, forming a titanium dioxide film for a diffusion barrier layer by annealing the titanium film after ion-implantation of oxygen ion into a surface region of the titanium film so as to change titanium in the surface region to titanium dioxide, and forming a high dielectric constant capacitor on the titanium dioxide film.
Inventors
- 👤 Yasuhiro Uemoto
- 👤 Eigi Fujii
- 👤 Koji Arita
- 👤 Yoshihisa Nagano
- 👤 Yasuhiro Shimada
- 👤 Masamichi Azuma
- 👤 Atsuo Inoue
- 👤 Yasufumi Izutsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:26
CPC Classifications
H; H10; H10B; H10B53/00; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/696; H10D1/682; H10D1/684; H10D1/694; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6314; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/69; H10P14/692; H10P14/6938
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
97 words
A capacitor for an integrated circuit comprising: a substrate; an adhesion layer, selected from a group consisting of titanium and tantalum, formed over said substrate; a diffusion barrier layer of an oxide of said adhesion layer formed on said adhesion layer, said diffusion barrier layer being non-conductive, said diffusion barrier layer having a thickness of at least 50 nm; a bottom electrode of a noble metal formed on said diffusion barrier layer; a dielectric layer of a metal oxide formed on said bottom electrode; and a top electrode of a conductive metal formed on said dielectric layer.
Claim 2
Dependent Claim
97 words
A capacitor for an integrated circuit comprising: a substrate; an adhesion layer, selected from a group consisting of titanium and tantalum, formed over said substrate; a diffusion barrier layer of an oxide of said adhesion layer formed on said adhesion layer, said diffusion barrier layer being non-conductive, said diffusion barrier layer having a thickness of at least 50 nm; a bottom electrode of a noble metal formed on said diffusion barrier layer; a dielectric layer of a metal oxide formed on said bottom electrode; and a top electrode of a conductive metal formed on said dielectric layer.
Claim 3
Dependent Claim
20 words
The capacitor of claim 1, wherein said adhesion layer and said diffusion barrier layer comprise titanium and titanium dioxide, respectively.
References Cited (Backward Citations)
EP0471845A1
Cited
EP0404295A1
Cited
US5005102A
Cited
US5543644A
Cited
US5561307A
Cited
EP0609081A2
Cited
US5508953A
Cited
US5576564A
Cited
US5554866A
Cited
US5555486A
Cited
US5625233A
Cited
US5679969A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-07-26 | 2003-01-25 | 2003-07-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-07-26 | 2007-01-25 | 2007-07-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-07-26 | 2011-01-25 | 2011-07-27 | $7700.00 | Window Closed / Lapsed |