US5576564A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ferroelectric thin film with intermediate buffer layer
Assignee: Sharp Corp
•
Filing: 1994-12-28
•
Granted: 1996-11-19
•
Expires: 2014-12-28
Abstract
Abstract The present invention provides a substrate providing a ferroelectric crystal thin film which includes an electrode formed on a semiconductor single crystal substrate and a ferroelectric crystal thin film of Bi 4 Ti 3 O 12 formed on the electrode through the intermediary of a buffer layer.
Inventors
- 👤 Sakiko Satoh
- 👤 Hironori Matsunaga
- 👤 Kenji Nakanishi
- 👤 Yoshiyuki Masuda
- 👤 Masayoshi Koba
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 01:55
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10D1/692; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/689
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
90 words
A substrate providing a ferroelectric crystal thin film, comprising: a semiconductor single crystal substrate; an electrode formed on said substrate; a buffer layer on said electrode, wherein said buffer layer contains Bi, Ti, and O, and continuously varies in its composition of Bi, Ti and O from Bi 2 Ti 2 O 7 to Bi 4 Ti 3 O 12 in a direction from the electrode to the ferroelectric crystal thin film; and a ferroelectric crystal thin film comprising Bi 4 Ti 3 O 12 formed on said buffer layer.
Claim 2
Dependent Claim
90 words
A substrate providing a ferroelectric crystal thin film, comprising: a semiconductor single crystal substrate; an electrode formed on said substrate; a buffer layer on said electrode, wherein said buffer layer contains Bi, Ti, and O, and continuously varies in its composition of Bi, Ti and O from Bi 2 Ti 2 O 7 to Bi 4 Ti 3 O 12 in a direction from the electrode to the ferroelectric crystal thin film; and a ferroelectric crystal thin film comprising Bi 4 Ti 3 O 12 formed on said buffer layer.
Claim 3
Dependent Claim
18 words
A substrate according to claim 1, further comprising an upper electrode formed on the ferroelectric crystal thin film.
Claim 4
Dependent Claim
28 words
A substrate according to claim 1, wherein said buffer layer includes at least one crystalline layer, each crystalline layer consisting of a composite oxide containing Bi and Ti.
Claim 5
Dependent Claim
22 words
A substrate according to claim 3, wherein said at least one crystalline layer consists of Bi 2 Ti 2 O 7 .
Claim 6
Dependent Claim
22 words
A substrate according to claim 1, further including at least one insulating film between said electrode and said semiconductor single crystal substrate.
Claim 7
Dependent Claim
22 words
A substrate according to claim 1, further including at least one conductive film between said electrode and said semiconductor single crystal substrate.
References Cited (Backward Citations)
US3808674A
Cited
US5146299A
Cited
US5128007A
Cited
JPH04133369A
Cited
EP0568065A2
Cited
JPH06305897A
Cited
JPH06329497A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-11-19 | 2000-05-20 | 2000-11-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-11-19 | 2004-05-20 | 2004-11-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-11-19 | 2008-05-20 | 2008-11-19 | $7700.00 | Window Closed / Lapsed |