Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
69 words
A method of forming a microelectronic structure, said method comprising: forming an oxidizable layer; forming an oxygen gettering layer on said oxidizable layer which oxygen gettering layer getters diffusing oxygen, thus minimizing the formation of a oxidized resistive layer either in or on said oxidizable layer; forming a noble metal layer on said oxygen gettering layer; and forming a layer of a high-dielectric-constant material on said noble metal layer.
Claim 2
Dependent Claim
25 words
The method according to claim 1 , further comprising forming said oxygen gettering layer to be part of a final structure and least partially oxidized.
Claim 3
Dependent Claim
25 words
The method according to claim 1 , further comprising forming said oxygen gettering layer to be part of an intermediate structure and not substantially oxidized.
Claim 4
Independent Claim
19 words
The method according to any preceding claims, further comprising forming a electrically conductive layer on said high-dielectric-constant material layer.
Claim 5
Dependent Claim
35 words
The method according to claim 4 , further comprising selecting said electrically conductive layer from the group consisting of: titanium nitride, ruthenium dioxide, YBa₂Cu₃O 7-x , platinum, palladium, rhodium, gold, iridium, silver, and combinations thereof.
Claim 6
Independent Claim
47 words
The method according to any preceding claim, further comprising forming said oxygen gettering layer comprising a mixture of at least one noble metal and at least one reactive component, wherein the ratio of said noble metal to said reactive component is between about 99:1 and about 1:3.
Claim 7
Dependent Claim
66 words
The method according to claim 6 , further comprising forming oxygen gettering layer comprising said graded mixture of at least one noble metal and at least one reactive component, wherein said reactive component constitutes greater than 99% of said oxygen gettering layer near said oxidizable layer, and said reactive component transitions to constitute less than 1% of said oxygen gettering layer near said noble metal layer.
Claim 8
Independent Claim
27 words
The method according to any preceding claim, further comprising forming said noble metal from the group consisting of: platinum, palladium, rhodium, gold, iridium, silver, and combinations thereof.
Claim 9
Independent Claim
55 words
The method according to any of claims 6 to 8 , further comprising selecting said reactive component and said oxidisable layer from the group consisting of: tantalum, tungsten, titanium, molybdenum, titanium nitride, zirconium nitride, titanium silicide, tantalum silicide, tungsten silicide, molybdenum silicide, tantalum carbide, titanium boride, boron carbide, silicon, germanium, carbon, GaAs, and combinations thereof.
Claim 10
Independent Claim
36 words
The method according to any preceding claim, further comprising selecting said high-dielectric-constant material from the group consisting of: barium strontium titanate, barium titanate, strontium titanate, lead zirconium titanate, lead zinc niobate, tantalum pentoxide, and combinations thereof.
Claim 11
Independent Claim
13 words
The method according to any preceding claim for forming a microelectronic capacitor layer.
Claim 12
Dependent Claim
60 words
A microelectronic structure comprising: an oxidizable layer; an oxygen gettering layer overlaying said oxidizable layer; a noble metal layer overlaying said oxygen gettering layer; and a layer of a high-dielectric-constant material overlaying said noble metal layer, whereby said oxygen gettering layer getters diffusing oxygen, thus minimizing the formation of a oxidized resistive layer either in or on said oxidizable layer.
Claim 13
Dependent Claim
23 words
The structure of claim 12 , wherein said oxygen gettering layer is part of a final structure and is at least partially oxidized.
Claim 14
Dependent Claim
22 words
The structure of claim 12 , wherein said oxygen gettering layer is part of an intermediate structure and is not substantially oxidized.
Claim 15
Dependent Claim
24 words
The structure of any of claims 12 to 14 , wherein said structure further comprises an electrically conductive layer overlaying said high-dielectric-constant material layer.
Claim 16
Dependent Claim
48 words
The structure of any of claims 12 to 14 , wherein said oxygen gettering layer comprises a mixture of at least one noble metal and at least one reactive component wherein the ratio of said noble metal to said reactive component is between about 99:1 and about 1:3.
Claim 17
Dependent Claim
43 words
The structure of claim 16 , wherein said reactive component constitutes greater than 99% of said oxygen gettering layer near said oxidizable layer, and said reactive component transitions to constitute less than 1% of said oxygen gettering layer near said noble metal layer.