US5914510A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor memory device and method of manufacturing the same
Assignee: Toshiba Corp
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Filing: 1996-12-13
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Granted: 1999-06-22
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Expires: 2016-12-13
Abstract
Abstract A semiconductor memory device having a first memory cell and a second memory cell, includes a first semiconductor substrate having a first conductivity type, a first layer having a second conductivity type serving as a buried plate electrode, a first capacitor insulating film in the first memory cell, a second capacitor insulating film in the second memory cell, a second layer contacting the first capacitor insulating film having a second conductivity type serving as a memory node, a third layer contacting the second capacitor insulating film having a second conductivity type serving as a memory node, wherein an upper surface of the semiconductor substrate and an upper surface of the second layer and the third layer form a step height.
Inventors
- 👤 Katsuhiko Hieda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:23
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/038; H10B12/0385; H10B12/30; H10B12/37; H10B12/373; H10D; H10D86/00; H10D86/01; H10D86/201; H10B12/05
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
360 words
A semiconductor memory device having a first memory cell and a second memory cell, comprising: a first semiconductor substrate having a first conductivity type; a first layer having a second conductivity type formed on said first semiconductor substrate and serving as a buried plate electrode; a first capacitor insulating film formed on said first layer in the first memory cell; a second capacitor insulating film formed on said first layer in the second memory cell; a second layer contacting the first capacitor insulating film having a second conductivity type serving as a memory node; a third layer contacting the second capacitor insulating film having a second conductivity type serving as a memory node; a first cap oxide film formed on the second layer; a second cap oxide film formed on the third layer; a first oxide film formed on the surface of the first cap oxide film; a second oxide film formed on the surface of the second cap oxide film; a first transfer transistor formed on the first oxide film having a source and drain region of the second conductivity type; a second transfer transistor formed on the second oxide film having a source and drain region of the second conductivity type; an isolation film formed on the first and second oxide films isolating the first memory cell and the second memory cell; a first polysilicon region electrically connecting the second layer and the source and drain regions of the first transfer transistor; a second polysilicon region electrically connecting the third layer and the source and drain regions of the second transfer transistor; a third cap oxide formed on the first polysilicon region; a fourth cap oxide formed on the second polysilicon region; a first gate electrode formed on the third cap oxide formed on the first polysilicon region serving as a gate electrode of a third transistor; and a second gate electrode formed on the fourth cap oxide formed on the second polysilicon region serving as a gate electrode of a fourth transistor, wherein an upper surface of the first semiconductor substrate and an upper surface of the second layer and the third layer form a step height.
Claim 2
Dependent Claim
360 words
A semiconductor memory device having a first memory cell and a second memory cell, comprising: a first semiconductor substrate having a first conductivity type; a first layer having a second conductivity type formed on said first semiconductor substrate and serving as a buried plate electrode; a first capacitor insulating film formed on said first layer in the first memory cell; a second capacitor insulating film formed on said first layer in the second memory cell; a second layer contacting the first capacitor insulating film having a second conductivity type serving as a memory node; a third layer contacting the second capacitor insulating film having a second conductivity type serving as a memory node; a first cap oxide film formed on the second layer; a second cap oxide film formed on the third layer; a first oxide film formed on the surface of the first cap oxide film; a second oxide film formed on the surface of the second cap oxide film; a first transfer transistor formed on the first oxide film having a source and drain region of the second conductivity type; a second transfer transistor formed on the second oxide film having a source and drain region of the second conductivity type; an isolation film formed on the first and second oxide films isolating the first memory cell and the second memory cell; a first polysilicon region electrically connecting the second layer and the source and drain regions of the first transfer transistor; a second polysilicon region electrically connecting the third layer and the source and drain regions of the second transfer transistor; a third cap oxide formed on the first polysilicon region; a fourth cap oxide formed on the second polysilicon region; a first gate electrode formed on the third cap oxide formed on the first polysilicon region serving as a gate electrode of a third transistor; and a second gate electrode formed on the fourth cap oxide formed on the second polysilicon region serving as a gate electrode of a fourth transistor, wherein an upper surface of the first semiconductor substrate and an upper surface of the second layer and the third layer form a step height.
Claim 3
Dependent Claim
27 words
A semiconductor memory device according to claim 1, wherein the upper surface of the first semiconductor substrate is lower than the upper surface of the second layer.
Claim 4
Dependent Claim
26 words
A semiconductor memory device according to claim 1, wherein the upper surface of the first semiconductor substrate is higher than the surface of the second layer.
Claim 5
Dependent Claim
35 words
A semiconductor memory device according to claim 1, further comprising a first diffusion region having the second conductivity type connected between the second layer and the source and drain region of the first transfer transistor.
Claim 6
Dependent Claim
147 words
A semiconductor memory device comprising: a semiconductor substrate of a first conductive type; a first layer of a second conductive type on said semiconductor substrate and serving as a buried plate electrode; a capacitor insulating film on said first layer in a memory cell; a second layer of the second conductive type contacting said capacitor insulating film and serving as a storage node; an insulating film formed above said second layer; a silicon layer formed on said insulating film; a transfer transistor having a source region and a drain region which are formed in said silicon layer; and a conductive layer electrically connecting said second layer to one of the source and drain regions of said transfer transistor, wherein an upper surface of said semiconductor substrate and an upper surface of said second layer form a step height greater than a thickness of said capacitor insulating film.
Claim 7
Dependent Claim
147 words
A semiconductor memory device comprising: a semiconductor substrate of a first conductive type; a first layer of a second conductive type on said semiconductor substrate and serving as a buried plate electrode; a capacitor insulating film on said first layer in a memory cell; a second layer of the second conductive type contacting said capacitor insulating film and serving as a storage node; an insulating film formed above said second layer; a silicon layer formed on said insulating film; a transfer transistor having a source region and a drain region which are formed in said silicon layer; and a conductive layer electrically connecting said second layer to one of the source and drain regions of said transfer transistor, wherein an upper surface of said semiconductor substrate and an upper surface of said second layer form a step height greater than a thickness of said capacitor insulating film.
Claim 8
Dependent Claim
38 words
A device according to claim 5, further comprising a diffusion region formed in said silicon layer, and connecting said one of the source and drain regions of said transfer transistor to said conductive layer within said silicon layer.
Claim 9
Dependent Claim
255 words
A semiconductor memory device comprising: a semiconductor substrate of a first conductive type; a trench formed in said semiconductor substrate; a first layer of a second conductive type formed in a portion of said semiconductor substrate which defines said trench, and serving as a buried plate electrode; a capacitor insulating film formed on a surface of said trench; a second layer of the second conductive type formed in said trench, serving as a storage node, wherein an upper surface of said semiconductor substrate and an upper surface of said second layer form a step therebetween, a level of said upper surface of the second layer is higher than a level of said upper surface of said semiconductor substrate, and a difference in the level between the upper surface of the second layer and the upper surface of the semiconductor substrate is greater than a thickness of the capacitor insulating film; an insulating film formed above said second layer; a silicon layer formed on said insulating film; a transfer transistor having a source region, a drain region and a gate electrode, the source and drain regions being formed in said silicon layer, said gate electrode including a part of a word line provided above said silicon layer such that the word line is insulated from said silicon layer; a through hole extending through said insulating film and said silicon layer; and a conductive layer in said through hole, and electrically connecting said second layer to one of the source and drain regions of said transfer transistor.
Claim 10
Dependent Claim
255 words
A semiconductor memory device comprising: a semiconductor substrate of a first conductive type; a trench formed in said semiconductor substrate; a first layer of a second conductive type formed in a portion of said semiconductor substrate which defines said trench, and serving as a buried plate electrode; a capacitor insulating film formed on a surface of said trench; a second layer of the second conductive type formed in said trench, serving as a storage node, wherein an upper surface of said semiconductor substrate and an upper surface of said second layer form a step therebetween, a level of said upper surface of the second layer is higher than a level of said upper surface of said semiconductor substrate, and a difference in the level between the upper surface of the second layer and the upper surface of the semiconductor substrate is greater than a thickness of the capacitor insulating film; an insulating film formed above said second layer; a silicon layer formed on said insulating film; a transfer transistor having a source region, a drain region and a gate electrode, the source and drain regions being formed in said silicon layer, said gate electrode including a part of a word line provided above said silicon layer such that the word line is insulated from said silicon layer; a through hole extending through said insulating film and said silicon layer; and a conductive layer in said through hole, and electrically connecting said second layer to one of the source and drain regions of said transfer transistor.
Claim 11
Dependent Claim
38 words
A device according to claim 7, further comprising a diffusion region formed in said silicon layer, and connecting said one of the source and drain regions of said transfer transistor to said conductive layer within said silicon layer.
Claim 12
Dependent Claim
29 words
A device according to claim 7, wherein said trench has a longitudinal axis and a transverse axis, the longitudinal axis of said trench being parallel to the word line.
Claim 13
Dependent Claim
29 words
A device according to claim 7, wherein said trench has a longitudinal axis and a transverse axis, the longitudinal axis of said trench being perpendicular to the word line.
Claim 14
Dependent Claim
37 words
A semiconductor memory device according to claim 7, further comprising a first diffusion region having the second conductivity type connected between the second layer and one of the source and drain regions of the first transfer transistor.
Claim 15
Dependent Claim
275 words
A semiconductor memory device comprising: a first semiconductor substrate of a first conductive type; an insulating film formed on a surface of the first semiconductor substrate; a second semiconductor substrate of the first conductive type formed above said insulating film; a trench formed in said first semiconductor substrate; a first layer of a second conductive type formed in a portion of said first semiconductor substrate which defines said trench, and serving as a buried plate electrode; a capacitor insulating film formed on a surface of said trench; a second layer of the second conductive type formed in said trench, serving as a storage node, wherein an upper surface of said first semiconductor substrate and an upper surface of said second layer form a step therebetween, a level of said upper surface of the second layer is higher than a level of said upper surface of said first semiconductor substrate, and a difference in the level between the upper surface of the second layer and the upper surface of the first semiconductor substrate is greater than a thickness of the capacitor insulating film; a transfer transistor having a source region, a drain region and a gate electrode, the source and drain regions being formed in said second semiconductor substrate, the gate electrode including a part of a word line above said second semiconductor substrate such that the word line is insulated from said second semiconductor substrate; a through hole extending through said insulating film and said second semiconductor substrate; and a conductive layer formed in said through hole, and electrically connecting said second layer to one of the source and drain regions of said transfer transistor.
Claim 16
Dependent Claim
275 words
A semiconductor memory device comprising: a first semiconductor substrate of a first conductive type; an insulating film formed on a surface of the first semiconductor substrate; a second semiconductor substrate of the first conductive type formed above said insulating film; a trench formed in said first semiconductor substrate; a first layer of a second conductive type formed in a portion of said first semiconductor substrate which defines said trench, and serving as a buried plate electrode; a capacitor insulating film formed on a surface of said trench; a second layer of the second conductive type formed in said trench, serving as a storage node, wherein an upper surface of said first semiconductor substrate and an upper surface of said second layer form a step therebetween, a level of said upper surface of the second layer is higher than a level of said upper surface of said first semiconductor substrate, and a difference in the level between the upper surface of the second layer and the upper surface of the first semiconductor substrate is greater than a thickness of the capacitor insulating film; a transfer transistor having a source region, a drain region and a gate electrode, the source and drain regions being formed in said second semiconductor substrate, the gate electrode including a part of a word line above said second semiconductor substrate such that the word line is insulated from said second semiconductor substrate; a through hole extending through said insulating film and said second semiconductor substrate; and a conductive layer formed in said through hole, and electrically connecting said second layer to one of the source and drain regions of said transfer transistor.
Claim 17
Dependent Claim
29 words
A device according to claim 12, wherein said trench has a longitudinal axis and a transverse axis, the longitudinal axis of said trench being parallel to the word line.
Claim 18
Dependent Claim
29 words
A device according to claim 12, wherein said trench has a longitudinal axis and a transverse axis, the longitudinal axis of said trench being perpendicular to the word line.
Claim 19
Dependent Claim
37 words
A semiconductor memory device according to claim 12, further comprising a first diffusion region having the second conductivity type connected between the second layer and one of the source and drain regions of the first transfer transistor.
Claim 20
Dependent Claim
224 words
A semiconductor memory device comprising: a semiconductor substrate of a first conductive type; a trench formed in said semiconductor substrate; a first layer of a second conductive type formed on a portion of said semiconductor substrate which defines said trench, and serving as a buried plate electrode; a capacitor insulating film formed on a surface of said trench; a second layer of the second conductive type formed in said trench, serving as a storage node, wherein an upper surface of said semiconductor substrate and an upper surface of said second layer form a step therebetween and a level of said upper surface of the second layer is lower than a level of said upper surface of said semiconductor substrate; an insulating film formed above said second layer; a silicon layer formed on said insulating film; a transfer transistor having a source region, a drain region and a gate electrode, the source and drain regions being formed in said silicon layer, said gate electrode including a part of a word line provided above said silicon layer such that the word line is insulated from said silicon layer; a through hole extending through said insulating film and said silicon layer; and a conductive layer in said through hole, and electrically connecting said second layer to one of the source and drain regions of said transfer transistor.
Claim 21
Dependent Claim
224 words
A semiconductor memory device comprising: a semiconductor substrate of a first conductive type; a trench formed in said semiconductor substrate; a first layer of a second conductive type formed on a portion of said semiconductor substrate which defines said trench, and serving as a buried plate electrode; a capacitor insulating film formed on a surface of said trench; a second layer of the second conductive type formed in said trench, serving as a storage node, wherein an upper surface of said semiconductor substrate and an upper surface of said second layer form a step therebetween and a level of said upper surface of the second layer is lower than a level of said upper surface of said semiconductor substrate; an insulating film formed above said second layer; a silicon layer formed on said insulating film; a transfer transistor having a source region, a drain region and a gate electrode, the source and drain regions being formed in said silicon layer, said gate electrode including a part of a word line provided above said silicon layer such that the word line is insulated from said silicon layer; a through hole extending through said insulating film and said silicon layer; and a conductive layer in said through hole, and electrically connecting said second layer to one of the source and drain regions of said transfer transistor.
Claim 22
Dependent Claim
38 words
A device according to claim 16, further comprising a diffusion region formed in said silicon layer, and connecting said one of the source and drain regions of said transfer transistor to said conductive layer within said silicon layer.
Claim 23
Dependent Claim
29 words
A device according to claim 16, wherein said trench has a longitudinal axis and a transverse axis, the longitudinal axis of said trench being parallel to the word line.
Claim 24
Dependent Claim
29 words
A device according to claim 16, wherein said trench has a longitudinal axis and a transverse axis, the longitudinal axis of said trench being perpendicular to the word line.
Claim 25
Dependent Claim
37 words
A semiconductor memory device according to claim 16, further comprising a first diffusion region having the second conductivity type connected between the second layer and one of the source and drain regions of the first transfer transistor.
Claim 26
Dependent Claim
243 words
A semiconductor memory device comprising: a first semiconductor substrate of a first conductive type; an insulating film formed on a surface of the first semiconductor substrate; a second semiconductor substrate of the first conductive type formed above said insulating film; a trench formed in said first semiconductor substrate; a first layer of a second conductive type formed in a portion of said first semiconductor substrate which defines said trench, and serving as a buried plate electrode; a capacitor insulating film formed on a surface of said trench; a second layer of the second conductive type formed in said trench, serving as a storage node, wherein an upper surface of said first semiconductor substrate and an upper surface of said second layer form a step therebetween and a level of said upper surface of the second layer is lower than a level of said upper surface of said first semiconductor substrate; a transfer transistor having a source region, a drain region and a gate electrode, the source and drain regions being formed in said second semiconductor substrate, the gate electrode including a part of a word line above said second semiconductor substrate such that the word line is insulated from said second semiconductor substrate; a through hole extending through said insulating film and said second semiconductor substrate; and a conductive layer formed in said through hole, and electrically connecting said second layer to one of the source and drain regions of said transfer transistor.
Claim 27
Dependent Claim
243 words
A semiconductor memory device comprising: a first semiconductor substrate of a first conductive type; an insulating film formed on a surface of the first semiconductor substrate; a second semiconductor substrate of the first conductive type formed above said insulating film; a trench formed in said first semiconductor substrate; a first layer of a second conductive type formed in a portion of said first semiconductor substrate which defines said trench, and serving as a buried plate electrode; a capacitor insulating film formed on a surface of said trench; a second layer of the second conductive type formed in said trench, serving as a storage node, wherein an upper surface of said first semiconductor substrate and an upper surface of said second layer form a step therebetween and a level of said upper surface of the second layer is lower than a level of said upper surface of said first semiconductor substrate; a transfer transistor having a source region, a drain region and a gate electrode, the source and drain regions being formed in said second semiconductor substrate, the gate electrode including a part of a word line above said second semiconductor substrate such that the word line is insulated from said second semiconductor substrate; a through hole extending through said insulating film and said second semiconductor substrate; and a conductive layer formed in said through hole, and electrically connecting said second layer to one of the source and drain regions of said transfer transistor.
Claim 28
Dependent Claim
29 words
A device according to claim 21, wherein said trench has a longitudinal axis and a transverse axis, the longitudinal axis of said trench being parallel to the word line.
Claim 29
Dependent Claim
29 words
A device according to claim 21, wherein said trench has a longitudinal axis and a transverse axis, the longitudinal axis of said trench being perpendicular to the word line.
Claim 30
Dependent Claim
37 words
A semiconductor memory device according to claim 21, further comprising a first diffusion region having the second conductivity type connected between the second layer and one of the source and drain regions of the first transfer transistor.
Claim 31
Dependent Claim
26 words
A semiconductor memory device according to claim 5, wherein the upper surface of said semiconductor substrate is higher than the upper surface of said second layer.
Claim 32
Dependent Claim
26 words
A semiconductor memory device according to claim 5, wherein the upper surface of said semiconductor substrate is lower than the upper surface of said second layer.
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