Patent US5908317A successfully refreshed from Google Patents.
US5908317A
Expired / Lapsed
US
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Method of forming chip bumps of bump chip scale semiconductor package
Assignee: Amkor Technology Singapore Holding Pte Ltd
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Filing: 1997-03-07
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Granted: 1999-06-01
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Expires: 2017-03-07
Abstract
Abstract A method of forming chip bumps of a bump chip scale semiconductor package, such a package and a chip bump are disclosed. In the bump chip scale semiconductor package produced by the above method, the chip bumps are directly formed on the chip pads of a semiconductor chip. The above chip bumps are used as the signal input and output terminals of the package and are used as surface mounting joints when the chip is mounted to a mother board.
Inventors
- 👤 Young Wook Heo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 18:37
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/20; H10W70/00; H10W70/099; H10W72/01; H10W72/0198; H10W74/00; H10W74/10; H10W74/111; H10W74/129; H10W72/012; H10W72/01215; H10W72/01221; H10W72/01225; H10W72/013; H10W72/01331; H10W72/071; H10W72/072; H10W72/07251; H10W72/221; H10W72/222; H10W72/223; H10W72/251; H10W72/252; H10W72/255; H10W72/50; H10W72/551; H10W72/552; H10W72/5522
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
169 words
A method for forming chip bumps of a bump chip scale semiconductor package, comprising: a) forming a gold bump on each chip pad of a semiconductor chip using a gold wire from a ball bond wire bonder, said gold bump having a gold tail; b) then applying a resin layer to the gold bump side of said semiconductor chip and around the gold bump leaving a part of each gold tail extending from the resin layer and curing the resin layer thus forming a resin coating layer on the gold bump side of the semiconductor chip; c) then bending the extending gold tail of said gold bump using a coining machine thus forming a bent gold tail; d) applying a flux to the bent gold tail side of said chip and positioning a solder ball on said bent gold tail; and e) heating the solder ball to form a chip bump, said chip bump having a spherical or hemispherical configuration and including said bent gold tail as its core.
Claim 2
Independent Claim
169 words
A method for forming chip bumps of a bump chip scale semiconductor package, comprising: a) forming a gold bump on each chip pad of a semiconductor chip using a gold wire from a ball bond wire bonder, said gold bump having a gold tail; b) then applying a resin layer to the gold bump side of said semiconductor chip and around the gold bump leaving a part of each gold tail extending from the resin layer and curing the resin layer thus forming a resin coating layer on the gold bump side of the semiconductor chip; c) then bending the extending gold tail of said gold bump using a coining machine thus forming a bent gold tail; d) applying a flux to the bent gold tail side of said chip and positioning a solder ball on said bent gold tail; and e) heating the solder ball to form a chip bump, said chip bump having a spherical or hemispherical configuration and including said bent gold tail as its core.
Claim 3
Dependent Claim
28 words
The method according to claim 1, wherein positioning the solder ball: applying a solder paste to the resin coating layer at a position including said bent gold tail.
Claim 4
Dependent Claim
44 words
The method according to claim 1, wherein heating the solder ball comprises: turning over the chip with the bent gold tail being directed downward and immersing said bent gold tail into a solder pot thus forming a solder bump on said bent gold tail.
Claim 5
Dependent Claim
39 words
The method according to claim 1, wherein heating the solder ball comprises: turning over the chip with the bent gold tail being directed downward and forming a solder bump on said bent gold tail though a wave soldering process.
Claim 6
Dependent Claim
20 words
The method according to claim 1 wherein said gold tail of the gold bump has a height of 10-30 mil.
Claim 7
Dependent Claim
39 words
The method according to claim 1, wherein said resin layer of the resin coating layer is formed of polyimide or epoxy resin and is heated at a temperature of 150-240° C. for at least 30 minutes thus being cured.
Claim 8
Dependent Claim
14 words
The method according to claim 1, wherein said flux is a rosin base flux.
Claim 9
Dependent Claim
29 words
The method according to claim 1, wherein said heating is performed in a convection oven, furnace or IR (infrared ray) reflow device maintaining a temperature higher than 190° C.
Claim 10
Independent Claim
120 words
A method for forming chip bumps of a bump chip scale semiconductor package, comprising: a) forming a solder bump including a solder tail on each chip pad of a semiconductor chip using a solder wire; b) then applying a resin layer to the solder bump side of said semiconductor chip and around the bump leaving a part of each solder tail extending from the resin layer and curing the resin layer thus forming a resin coating layer on a side of said solder bump; and c) then fusing the extending part of said solder tail and cooling the fused solder tail thus forming the fused solder tail into a spherical or hemispherical chip bump due to gravity and surface tension.
Claim 11
Independent Claim
120 words
A method for forming chip bumps of a bump chip scale semiconductor package, comprising: a) forming a solder bump including a solder tail on each chip pad of a semiconductor chip using a solder wire; b) then applying a resin layer to the solder bump side of said semiconductor chip and around the bump leaving a part of each solder tail extending from the resin layer and curing the resin layer thus forming a resin coating layer on a side of said solder bump; and c) then fusing the extending part of said solder tail and cooling the fused solder tail thus forming the fused solder tail into a spherical or hemispherical chip bump due to gravity and surface tension.
Claim 12
Dependent Claim
41 words
The method according to claim 9, wherein the forming of the solder bump comprises: forming a gold bump core on each chip pad of the semiconductor chip using a gold wire; and covering said gold bump core with the solder wire.
Claim 13
Dependent Claim
25 words
The method according to claim 9, wherein the curing of the resin coating layer is followed by applying a flux to the resin coating layer.
Claim 14
Dependent Claim
14 words
The method according to claim 11, wherein said flux is a rosin base flux.
Claim 15
Dependent Claim
20 words
The method according to claim 9, wherein said solder tail of the solder bump has a height of 10-30 mil.
Claim 16
Dependent Claim
39 words
The method according to claim 9, wherein said resin layer of the resin coating layer is formed of polyimide or epoxy resin and is heated at a temperature of 150-240° C. for at least 30 minutes for the curing.
Claim 17
Dependent Claim
29 words
The method according to claim 9, wherein said heating is performed in a convection oven, furnace or IR (infrared ray) reflow device maintaining a temperature higher than 190° C.
Claim 18
Dependent Claim
65 words
The method according to claim 13, further comprising after forming the chip bump: applying a flux to the chip bump side of said chip and applying solder paste to form an additional chip bump on the resin coating layer at a position including said chip bump; and fusing the solder paste and cooling the fused solder paste thus enlarging the size of said chip bump.
Claim 19
Dependent Claim
59 words
The method according to claim 13, further comprising after forming the chip bump: applying a flux to the chip bump side of said chip and applying a solder paste to said chip bump; and fusing the solder paste to the chip bump and cooling the fused solder paste and chip bump thus enlarging the size of said chip bump.
Claim 20
Dependent Claim
14 words
The method according to claim 17, wherein said flux is a rosin base flux.
Claim 21
Dependent Claim
29 words
The method according to claim 16, wherein said heating is performed in a convection oven, furnace or IR (infrared ray) reflow device maintaining a temperature higher than 190° C.
Claim 22
Dependent Claim
14 words
The method according to claim 16 wherein said flux is a rosin base flux.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-05-31 | 2002-11-30 | 2003-06-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-05-31 | 2006-11-30 | 2007-06-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-05-31 | 2010-11-30 | 2011-06-01 | $7700.00 | Window Closed / Lapsed |