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Patent US5879969A successfully refreshed from Google Patents.
US5879969A
Expired / Lapsed
US
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Semiconductor device and method for forming the same
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1997-04-30
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Granted: 1999-03-09
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Expires: 2017-04-30
Abstract
Abstract In a thin-film insulated gate type field effect transistor having a metal gate in which the surface of the gate electrode is subjected to anodic oxidation, a silicon nitride film is provided so as to be interposed between the gate electrode and the gate insulating film to prevent invasion of movable ions into a channel, and also to prevent the breakdown of the gate insulating film due to a potential difference between the gate electrode and the channel region. By coating a specific portion of the gate electrode with metal material such as chrome or the like for the anodic oxidation, and then removing only the metal material such as chrome or the like together with the anodic oxide of the metal material such as chrome or the like, an exposed portion of metal gate (e.g. aluminum) is formed, and an upper wiring is connected to the exposed portion. Further, an aluminum oxide or silicon nitride is formed as an etching stopper between the gate electrode and the gate insulating film or between the substrate and the layer on the substrate, so that the over-etching can be prevented and the flatness of the element can be improved. In addition, a contact is formed in no consideration of the concept "contact hole".
Inventors
- 👤 Shunpei Yamazaki
- 👤 Hongyong Zhang
- 👤 Yasuhiko Takemura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 03:22
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/6737; H10D30/6739; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D30/6746; H10D86/00; H10D86/40; H10D86/441; H10D86/60; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; G02F1/136; G02F1/1362; G02F1/13624; G02F1/136245
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
90 words
A method of manufacturing a semiconductor device comprising the steps of: forming an electrode pattern on a substrate, said electrode pattern comprising an anodizable material; forming a wiring on said substrate, said wiring being electrically connected to said electrode pattern and comprising a different material from said anodizable material; performing an anodic oxidation to oxidize an exposed surface of said electrode pattern by feeding an electric field thereto through said wiring; and selectively removing said wiring after performing said anodic oxidation to expose an unoxidized surface of said electrode pattern.
Claim 2
Independent Claim
90 words
A method of manufacturing a semiconductor device comprising the steps of: forming an electrode pattern on a substrate, said electrode pattern comprising an anodizable material; forming a wiring on said substrate, said wiring being electrically connected to said electrode pattern and comprising a different material from said anodizable material; performing an anodic oxidation to oxidize an exposed surface of said electrode pattern by feeding an electric field thereto through said wiring; and selectively removing said wiring after performing said anodic oxidation to expose an unoxidized surface of said electrode pattern.
Claim 3
Dependent Claim
15 words
The method of claim 1 wherein said wiring is not anodized by said anodic oxidation.
Claim 4
Dependent Claim
23 words
The method of claim 2 wherein said wiring comprises a material selected from the group consisting of gold, titanium oxide, and indium oxide.
Claim 5
Dependent Claim
14 words
The method of claim 1 wherein said wiring is anodized by said anodic oxidation.
Claim 6
Dependent Claim
20 words
The method of claim 4 wherein said wiring comprises a metal selected from the group consisting of chromium and titanium.
Claim 7
Dependent Claim
18 words
The semiconductor device of claim 1 wherein said electrode pattern comprises a gate wiring and a gate electrode.
Claim 8
Independent Claim
121 words
A method of manufacturing a semiconductor device comprising the steps of: forming a first electrode pattern on a substrate, said first electrode pattern comprising an anodizable material; forming a wiring on said substrate, said wiring being electrically connected to said electrode pattern and comprising a different material from said anodizable material; performing an anodic oxidation to oxidize an exposed surface of said electrode pattern by feeding an electric field thereto through said wiring wherein a portion of said electrode pattern that is covered by said wiring is not oxidized; selectively removing said wiring after performing said anodic oxidation to expose said portion of the electrode pattern; and forming a second electrode in electrical contact with said portion of the electrode pattern.
Claim 9
Independent Claim
121 words
A method of manufacturing a semiconductor device comprising the steps of: forming a first electrode pattern on a substrate, said first electrode pattern comprising an anodizable material; forming a wiring on said substrate, said wiring being electrically connected to said electrode pattern and comprising a different material from said anodizable material; performing an anodic oxidation to oxidize an exposed surface of said electrode pattern by feeding an electric field thereto through said wiring wherein a portion of said electrode pattern that is covered by said wiring is not oxidized; selectively removing said wiring after performing said anodic oxidation to expose said portion of the electrode pattern; and forming a second electrode in electrical contact with said portion of the electrode pattern.
Claim 10
Independent Claim
95 words
A method of manufacturing a semiconductor device comprising the steps of: forming an electrode pattern over a substrate, said electrode pattern comprising an oxidizable material; forming a mask in electrical contact with said electrode pattern; disposing said electrode pattern and said mask in an electrolyte for anodic oxidation; and oxidizing an unmasked surface of said electrode to form an insulating layer thereon by applying an electric current to said electrode pattern through said mask in said electrolyte, wherein said mask comprises a conductive material which has a higher resistivity against oxidation than said oxidizable material.
Claim 11
Independent Claim
95 words
A method of manufacturing a semiconductor device comprising the steps of: forming an electrode pattern over a substrate, said electrode pattern comprising an oxidizable material; forming a mask in electrical contact with said electrode pattern; disposing said electrode pattern and said mask in an electrolyte for anodic oxidation; and oxidizing an unmasked surface of said electrode to form an insulating layer thereon by applying an electric current to said electrode pattern through said mask in said electrolyte, wherein said mask comprises a conductive material which has a higher resistivity against oxidation than said oxidizable material.
Claim 12
Dependent Claim
11 words
The method of claim 8 wherein said electrode pattern comprises aluminum.
Claim 13
Dependent Claim
29 words
The method of claim 8 wherein said conductive material is selected from the group consisting of chromium, gold, titanium, silicon, indium oxide, titanium oxide, indium-titanium oxide, and zinc oxide.
Claim 14
Independent Claim
75 words
A method of manufacturing a semiconductor device comprising the steps of: forming an electrode pattern comprising an anodizable metal over a substrate; forming a conductive material in contact with said electrode pattern; disposing said electrode pattern and said conductive material into an electrolyte for anodic oxidation; conducting anodic oxidation in said electrolyte by applying an electric current to said electrode pattern through said conductive material, wherein said conductive material is different from said anodizable metal.
Claim 15
Independent Claim
75 words
A method of manufacturing a semiconductor device comprising the steps of: forming an electrode pattern comprising an anodizable metal over a substrate; forming a conductive material in contact with said electrode pattern; disposing said electrode pattern and said conductive material into an electrolyte for anodic oxidation; conducting anodic oxidation in said electrolyte by applying an electric current to said electrode pattern through said conductive material, wherein said conductive material is different from said anodizable metal.
Claim 16
Dependent Claim
34 words
A method of manufacturing a semiconductor device according to claim 11 wherein said conductive material is selected from the group consisting of chromium, titanium, silicon, indium oxide, titanium oxide, indium-titanium oxide, and zinc oxide.
References Cited (Backward Citations)
US3634203A
Cited
US4015281A
Cited
US3671819A
Cited
US3740280A
Cited
US4055885A
Cited
US4042945A
Cited
US4485393A
Cited
JPS5823479A
Cited
US4469568A
Cited
JPS58106861A
Cited
JPS63178560A
Cited
US5146301A
Cited
US4866498A
Cited
US5051794A
Cited
JPH02159730A
Cited
JPH02210420A
Cited
JPH02216129A
Cited
JPH02228042A
Cited
US5041888A
Cited
JPH03165575A
Cited
JPH03217059A
Cited
US5177577A
Cited
US5225356A
Cited
US5289030A
Cited
JPH04299864A
Cited
US5240868A
Cited
JPH04360580A
Cited
US5422293A
Cited
US5576225A
Cited
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