US5877086A
Expired / Lapsed
US
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Metal planarization using a CVD wetting film
Assignee: Applied Materials Inc
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Filing: 1997-07-11
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Granted: 1999-03-02
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Expires: 2017-07-11
Abstract
Abstract The present invention is a process for planarization of substrate layers comprising apertures to form continuous, void-free contacts or vias in sub-half micron applications. A CVD silicon or metal silicide wetting layer is deposited onto the substrate layer comprising apertures to provide a conformal wetting layer for a PVD metal layer. The PVD metal layer is deposited onto the previously formed CVD metal layer at a temperature below that of the melting point temperature of the metal. The CVD layer diffuses into the PVD layer and the resulting conductive layer is substantially void-free. The planarization process is preferably carried out in a multi-chamber system that includes both PVD and CVD processing chambers so that once the substrate is introduced into a vacuum environment, the filling of vias and contacts occurs without the formation of an oxide layer over the CVD wetting layer.
Inventors
- 👤 Michio Aruga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 07:40
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10P; H10P72/00; H10P72/04; H10P72/0451; H10P72/0461; H10W20/056; H10W20/059
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
41 words
A method for planarization of a substrate layer comprising apertures, comprising the steps of: chemical vapor depositing a silicon or metal silicide wetting layer on a substrate layer comprising apertures; and physical vapor depositing a metal layer on the wetting layer.
Claim 2
Independent Claim
41 words
A method for planarization of a substrate layer comprising apertures, comprising the steps of: chemical vapor depositing a silicon or metal silicide wetting layer on a substrate layer comprising apertures; and physical vapor depositing a metal layer on the wetting layer.
Claim 3
Dependent Claim
27 words
The method of claim 1, wherein the wetting layer has an initial thickness of between about 80 and about 100 Angstroms before diffusing into the metal layer.
Claim 4
Dependent Claim
16 words
The method of claim 1, wherein the physical vapor depositing initially occurs below about 400° C.
Claim 5
Dependent Claim
17 words
The method of claim 1, wherein the metal layer comprises at least 99% by weight of aluminum.
Claim 6
Dependent Claim
21 words
The method of claim 1, wherein the wetting layer completely diffuses into the metal layer to form a uniform conductive layer.
Claim 7
Dependent Claim
21 words
The method of claim 1, wherein the substrate layer comprising the apertures further comprises a barrier layer of Ti or TiN.
Claim 8
Dependent Claim
26 words
The method of claim 1, wherein the wetting layer is deposited by thermal decomposition of disilane or by reaction of WF 6 and SiH 4 .
Claim 9
Dependent Claim
26 words
The method of claim 1, wherein the wetting layer and the metal layer are deposited in a multi-chamber apparatus which precludes oxidation of the wetting layer.
Claim 10
Independent Claim
73 words
A method for planarization of a patterned dielectric layer, comprising the steps of: depositing a Ti or TiN barrier layer on the patterned dielectric layer; chemical vapor depositing a silicon or tungsten silicide wetting layer on the barrier layer by thermal decomposition of disilane or by reaction of WF 6 and SiH 4 ; and physical vapor depositing a metal layer comprising at least 99% by weight of aluminum on the wetting layer.
Claim 11
Independent Claim
73 words
A method for planarization of a patterned dielectric layer, comprising the steps of: depositing a Ti or TiN barrier layer on the patterned dielectric layer; chemical vapor depositing a silicon or tungsten silicide wetting layer on the barrier layer by thermal decomposition of disilane or by reaction of WF 6 and SiH 4 ; and physical vapor depositing a metal layer comprising at least 99% by weight of aluminum on the wetting layer.
Claim 12
Dependent Claim
27 words
The method of claim 9, wherein the wetting layer has an initial thickness of between about 80 and about 100 Angstroms before diffusing into the metal layer.
Claim 13
Dependent Claim
16 words
The method of claim 9, wherein the physical vapor depositing initially occurs below about 400° C.
Claim 14
Dependent Claim
21 words
The method of claim 9, wherein the wetting layer completely diffuses into the metal layer to form a uniform conductive layer.
Claim 15
Dependent Claim
29 words
The method of claim 9, wherein the barrier layer, the wetting layer, and the metal layer are deposited in a multi-chamber apparatus which precludes oxidation of the wetting layer.
Claim 16
Dependent Claim
40 words
A semiconductor wafer, produced by a process comprising the steps of: chemical vapor depositing a wetting layer comprising silicon or a metal silicide on a wafer layer comprising apertures; and physical vapor depositing a metal layer on the wetting layer.
Claim 17
Dependent Claim
40 words
A semiconductor wafer, produced by a process comprising the steps of: chemical vapor depositing a wetting layer comprising silicon or a metal silicide on a wafer layer comprising apertures; and physical vapor depositing a metal layer on the wetting layer.
Claim 18
Dependent Claim
27 words
The wafer of claim 14, wherein the wetting layer has an initial thickness of between about 80 and about 100 Angstroms before diffusing into the metal layer.
Claim 19
Dependent Claim
16 words
The wafer of claim 14, wherein the physical vapor depositing initially occurs below about 400° C.
Claim 20
Dependent Claim
17 words
The wafer of claim 14, wherein the metal layer comprises at least 99% by weight of aluminum.
Claim 21
Dependent Claim
21 words
The wafer of claim 14, wherein the wetting layer completely diffuses into the metal layer to form a uniform conductive layer.
Claim 22
Dependent Claim
26 words
The wafer of claim 14, wherein the substrate layer comprising apertures comprises one or more patterned dielectric layers capped by a Ti or TiN barrier layer.
Claim 23
Dependent Claim
26 words
The wafer of claim 14, wherein the wetting layer is deposited by thermal decomposition of disilane or by reaction of WF 6 and SiH 4 .
Claim 24
Dependent Claim
71 words
A semiconductor wafer, produced by a process comprising the steps of: depositing a Ti or TiN barrier layer on a patterned dielectric layer; chemical vapor depositing a silicon or tungsten silicide wetting layer on the barrier layer by thermal decomposition of disilane or by reaction of WF 6 and SiH 4 ; and physical vapor depositing a metal layer comprising at least 99% by weight of aluminum on the wetting layer.
Claim 25
Dependent Claim
71 words
A semiconductor wafer, produced by a process comprising the steps of: depositing a Ti or TiN barrier layer on a patterned dielectric layer; chemical vapor depositing a silicon or tungsten silicide wetting layer on the barrier layer by thermal decomposition of disilane or by reaction of WF 6 and SiH 4 ; and physical vapor depositing a metal layer comprising at least 99% by weight of aluminum on the wetting layer.
Claim 26
Dependent Claim
27 words
The wafer of claim 21, wherein the wetting layer has an initial thickness of between about 80 and about 100 Angstroms before diffusing into the metal layer.
Claim 27
Dependent Claim
16 words
The wafer of claim 21, wherein the physical vapor depositing initially occurs below about 400° C.
Claim 28
Dependent Claim
21 words
The wafer of claim 21, wherein the wetting layer completely diffuses into the metal layer to form a uniform conductive layer.
References Cited (Backward Citations)
JPS639925A
Cited
US4985750A
Cited
DE3743591A1
Cited
US4960732A
Cited
US4994410A
Cited
US4938996A
Cited
US4920073A
Cited
US5091339A
Cited
US5250465A
Cited
US5147819A
Cited
US5480836A
Cited
US5292558A
Cited
US5231056A
Cited
US5585673A
Cited
US5354712A
Cited
US5585308A
Cited
US5647952A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-03-01 | 2002-08-31 | 2003-03-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-03-01 | 2006-08-31 | 2007-03-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-03-01 | 2010-08-31 | 2011-03-02 | $7700.00 | Window Closed / Lapsed |