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US5866440A
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Method of making compound semiconductor light emitting device having evaporation preventing layer Alx Ga.sub.(1-x) N
Assignee: Sharp Corp
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Filing: 1997-10-14
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Granted: 1999-02-02
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Expires: 2017-10-14
Abstract
Abstract After the active layer including indium is formed, the evaporation preventing layer is formed at a temperature which does not cause liberation of indium. The p-type Al X Ga 1-X N (0≦X≦1) or the like is used for the evaporation preventing layer. Increasing the substrate temperature to as high as 1020° C. for forming the upper cladding layer does not cause liberation of indium from the active layer because the evaporation preventing layer is provided. As a result, the composition ratio of indium can be easily controlled and the high-quality active layer and the high-quality interface between the active layer and the upper cladding layer can be provided.
Inventors
- 👤 Toshio Hata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 16:39
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32341; Y; Y10; Y10S; Y10S148/00; Y10S148/095
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
84 words
A method of manufacturing a compound semiconductor light emitting device, comprising: a first step of forming a lower cladding layer; a second step of forming an active layer of Al X Ga Y In Z N (X+Y+Z=1, 0≦X·Y≦1 and 0<Z≦1) on said lower cladding layer at a first temperature; and a third step of forming an evaporation preventing layer of Al X Ga 1-X N (0≦X≦1) on said active layer at a second temperature which is equal to or lower than said first temperature.
Claim 2
Independent Claim
84 words
A method of manufacturing a compound semiconductor light emitting device, comprising: a first step of forming a lower cladding layer; a second step of forming an active layer of Al X Ga Y In Z N (X+Y+Z=1, 0≦X·Y≦1 and 0<Z≦1) on said lower cladding layer at a first temperature; and a third step of forming an evaporation preventing layer of Al X Ga 1-X N (0≦X≦1) on said active layer at a second temperature which is equal to or lower than said first temperature.
Claim 3
Independent Claim
111 words
A method of manufacturing a compound semiconductor light emitting device, comprising: a first step of forming a lower cladding layer; a second step of forming an active layer of Al XGa Y In Z N (X+Y+Z=1, 0≦X·Y≦1 and 0<Z≦1) on said lower cladding layer at a first temperature; a third step of forming an evaporation preventing layer of Al X Ga 1-X N (0≦X≦1) on said active layer at a second temperature which is equal to or higher than said first temperature; and a fourth step of forming an upper cladding layer on said evaporation preventing layer at a third temperature which is equal to or higher than said second temperature.
Claim 4
Independent Claim
111 words
A method of manufacturing a compound semiconductor light emitting device, comprising: a first step of forming a lower cladding layer; a second step of forming an active layer of Al XGa Y In Z N (X+Y+Z=1, 0≦X·Y≦1 and 0<Z≦1) on said lower cladding layer at a first temperature; a third step of forming an evaporation preventing layer of Al X Ga 1-X N (0≦X≦1) on said active layer at a second temperature which is equal to or higher than said first temperature; and a fourth step of forming an upper cladding layer on said evaporation preventing layer at a third temperature which is equal to or higher than said second temperature.
Claim 5
Independent Claim
79 words
A method of manufacturing a compound semiconductor light emitting device, comprising: a first step of forming a lower cladding layer; a second step of forming an active layer of Al X Ga Y In Z N (X+Y+Z=1, 0≦X·Y≦1 and 0<Z≦1) on said lower cladding layer at a first temperature; and a third step of forming an evaporation preventing layer of Al X Ga 1-X N (0≦X≦1) on said active layer at a temperature substantially equal to said first temperature.
Claim 6
Independent Claim
79 words
A method of manufacturing a compound semiconductor light emitting device, comprising: a first step of forming a lower cladding layer; a second step of forming an active layer of Al X Ga Y In Z N (X+Y+Z=1, 0≦X·Y≦1 and 0<Z≦1) on said lower cladding layer at a first temperature; and a third step of forming an evaporation preventing layer of Al X Ga 1-X N (0≦X≦1) on said active layer at a temperature substantially equal to said first temperature.
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