US5753939A — Light-emitting semiconductor device using a Group…

Claim 1

Independent Claim 219 words

A light-emitting semiconductor device comprising: a hetero junction structure including: an n-layer having n-type conduction and a Group III nitride compound semiconductor satisfying the formula Al x1 Ga y1 In 1-x1-y1 N, wherein 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1, a p-layer having p-type conduction and a Group III nitride compound satisfying the formula Al x3 Ga y3 In 1-3x-y3 , N wherein 0≦x3≦1, 0≦y3≦1, and 0≦x3+y3≦1, and an emission layer formed between said n-layer and said p-layer, said emission layer comprising a Group III nitride compound satisfying the formula Al x2 Ga y2 In 1-x2-y2 N, wherein 0≦x2≦1, 0≦y2≦1, and 0≦x2+y2≦1; a metal electrode formed on said p-layer; and wherein said p-layer has at least a double layer structure having a first p-layer satisfying the formula Al x4 Ga y4 In 1-x4-y4 ,N wherein 0≦x4≦1, 0≦y4≦1, and 0≦x4+y4≦1 and a second p-layer satisfying the formula Al x5 Ga y5 In 1-x5-y5 ,N wherein 0≦x5≦1, 0≦y5≦1, and 0≦x5+y5≦1, wherein said first p-layer is doped with an acceptor impurity in concentration nearly equal to an impurity concentration that makes maximum hole concentration, and wherein said second p-layer is formed on said first p-layer in direct contact with said metal electrode and is doped with an acceptor impurity in concentration nearly equal to an impurity concentration that makes minimum driving voltage of said device.

Claim 2

Dependent Claim 219 words

A light-emitting semiconductor device comprising: a hetero junction structure including: an n-layer having n-type conduction and a Group III nitride compound semiconductor satisfying the formula Al x1 Ga y1 In 1-x1-y1 N, wherein 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1, a p-layer having p-type conduction and a Group III nitride compound satisfying the formula Al x3 Ga y3 In 1-3x-y3 , N wherein 0≦x3≦1, 0≦y3≦1, and 0≦x3+y3≦1, and an emission layer formed between said n-layer and said p-layer, said emission layer comprising a Group III nitride compound satisfying the formula Al x2 Ga y2 In 1-x2-y2 N, wherein 0≦x2≦1, 0≦y2≦1, and 0≦x2+y2≦1; a metal electrode formed on said p-layer; and wherein said p-layer has at least a double layer structure having a first p-layer satisfying the formula Al x4 Ga y4 In 1-x4-y4 ,N wherein 0≦x4≦1, 0≦y4≦1, and 0≦x4+y4≦1 and a second p-layer satisfying the formula Al x5 Ga y5 In 1-x5-y5 ,N wherein 0≦x5≦1, 0≦y5≦1, and 0≦x5+y5≦1, wherein said first p-layer is doped with an acceptor impurity in concentration nearly equal to an impurity concentration that makes maximum hole concentration, and wherein said second p-layer is formed on said first p-layer in direct contact with said metal electrode and is doped with an acceptor impurity in concentration nearly equal to an impurity concentration that makes minimum driving voltage of said device.

Claim 3

Dependent Claim 36 words

A light-emitting semiconductor device according to claim 1, wherein said acceptor impurity doped into said first p-layer is magnesium and wherein said impurity concentration that makes maximum hole concentration is about 5×10 19 /cm 3 .

Claim 4

Dependent Claim 36 words

A light-emitting semiconductor device according to claim 1, wherein said acceptor impurity doped into said second p-layer is magnesium and wherein said impurity concentration that makes minimum driving voltage is about 2×10 20 /cm 3 .

Claim 5

Dependent Claim 15 words

A light-emitting semiconductor device according to claim 1, wherein said second p-layer is gallium nitride.

Claim 6

Dependent Claim 37 words

A light-emitting semiconductor device according to claim 1, wherein a third p-layer satisfying the formula Al x6 Ga y6 In 1-x6-y6 N wherein 0≦x6≦1, 0≦y6≦1, and 0≦x6+y6≦1 is formed between said emission layer and said first p-layer.

Claim 7

Dependent Claim 18 words

A light-emitting semiconductor device according to claim 1, wherein said first p-layer is Ga y5 In 1-y5 N.

Claim 8

Dependent Claim 18 words

A light-emitting semiconductor device according to claim 5, wherein said third p-layer is Al x6 Ga 1-x6 N.

Claim 9

Dependent Claim 21 words

A light-emitting semiconductor device according to claim 5, wherein said metal electrode comprises one of nickel and an alloy including nickel.

Claim 10

Dependent Claim 21 words

A light-emitting semiconductor device according to claim 1, wherein said metal electrode comprises one of nickel and an alloy including nickel.

Claim 11

Dependent Claim 25 words

A light-emitting semiconductor device according to claim 1, wherein said first p-layer is Al x4 Ga 1-x5 N and is formed on said emission layer.

Claim 12

Dependent Claim 67 words

A light-emitting semiconductor device according to claim 1, wherein concentration of said acceptor impurity doped into said first p-layer is lower than a selected concentration that is in between the concentration that makes maximum hole concentration and the concentration that makes minimum driving voltage of said device and wherein concentration of said acceptor impurity doped into said second p-layer is at least equal to said selected concentration.

Claim 13

Dependent Claim 21 words

A light-emitting semiconductor device according to claim 11, wherein said acceptor impurity doped into said first and second p-layers is magnesium.

Claim 14

Dependent Claim 18 words

A light-emitting semiconductor device according to claim 12, wherein said selected concentration is 1×10 20 /cm 3 .

Claim 15

Dependent Claim 55 words

A light-emitting semiconductor device according to claim 12, wherein magnesium concentration doped into said first p-layer is in the range of about 1×10 19 /cm 3 to about said selected concentration and magnesium concentration doped into said second p-layer is in the range of about said selected concentration to about 1×10 21 /cm 3 .

Claim 16

Dependent Claim 57 words

A light-emitting semiconductor device according to claim 12, wherein magnesium concentration doped into said first p-layer is in the range of about 1×10 19 /cm 3 to about 1×10 20 /cm 3 and magnesium concentration doped into said second p-layer is in the range of about 1×10 20 /cm 3 to about 1×10 21 /cm 3 .

Claim 17

Dependent Claim 46 words

A light-emitting semiconductor device according to claim 1, wherein said acceptor impurity doped into said first p-layer is magnesium and wherein said impurity concentration that makes maximum hole concentration is in the range from about 1×10 19 /cm 3 to about 5×10 20 /cm 3 .

Claim 18

Dependent Claim 46 words

A light-emitting semiconductor device according to claim 1, wherein said acceptor impurity doped into said second p-layer is magnesium and wherein said impurity concentration that makes minimum driving voltage is in the range of about 1×10 20 /cm 3 to about 1×10 21 /cm 3 .

Claim 19

Dependent Claim 170 words

A light-emitting semiconductor device comprising: a hetero junction structure including: an n-layer having n-type conduction and a Group III nitride compound semiconductor satisfying the formula Al x1 Ga y1 In 1-x1-y1 N, wherein 0≦x1≦1, 0≦y1≦1, and 0≦x1+y≦1, a p-layer having p-type conduction and a Group III nitride compound satisfying the formula Al x3 Ga ye In 1-x3-y3 N, wherein 0≦x3≦1, 0≦y3≦1, and 0≦x3+y3≦1, and an emission layer of a Group III nitride compound satisfying the formula Al x2 Ga y2 In 1-x2-y2 N, wherein 0≦x2≦1, 0≦y2≦1, and 0≦x2+y2≦1 and being formed between said n-layer and said n-layer and said p-layer; a contact layer having p-type conduction and a Group III nitride compound satisfying the formula Al x4 Ga y4 In 1-x4-y4 N, wherein 0≦x4≦1, 0≦y4≦1, and 0≦x4+y4≦1, said contact layer being formed on said p-layer; a metal electrode formed in direct contact with said contact layer; and wherein said contact layer is doped with an acceptor impurity in concentration more heavily than an impurity concentration that makes maximum hole concentration.

Claim 20

Dependent Claim 170 words

A light-emitting semiconductor device comprising: a hetero junction structure including: an n-layer having n-type conduction and a Group III nitride compound semiconductor satisfying the formula Al x1 Ga y1 In 1-x1-y1 N, wherein 0≦x1≦1, 0≦y1≦1, and 0≦x1+y≦1, a p-layer having p-type conduction and a Group III nitride compound satisfying the formula Al x3 Ga ye In 1-x3-y3 N, wherein 0≦x3≦1, 0≦y3≦1, and 0≦x3+y3≦1, and an emission layer of a Group III nitride compound satisfying the formula Al x2 Ga y2 In 1-x2-y2 N, wherein 0≦x2≦1, 0≦y2≦1, and 0≦x2+y2≦1 and being formed between said n-layer and said n-layer and said p-layer; a contact layer having p-type conduction and a Group III nitride compound satisfying the formula Al x4 Ga y4 In 1-x4-y4 N, wherein 0≦x4≦1, 0≦y4≦1, and 0≦x4+y4≦1, said contact layer being formed on said p-layer; a metal electrode formed in direct contact with said contact layer; and wherein said contact layer is doped with an acceptor impurity in concentration more heavily than an impurity concentration that makes maximum hole concentration.

Claim 21

Dependent Claim 36 words

A light-emitting semiconductor device according to claim 18, wherein said acceptor impurity doped into said contact layer is magnesium and wherein said impurity concentration that makes maximum hole concentration is about 5×10 20 /cm 3 .

Claim 22

Dependent Claim 15 words

A light-emitting semiconductor device according to claim 18, wherein said contact layer is gallium nitride.

Claim 23

Dependent Claim 18 words

A light-emitting semiconductor device according to claim 18, wherein said contact layer is Ga y4 In 1-y4 N.

Claim 24

Dependent Claim 21 words

A light-emitting semiconductor device according to claim 18, wherein said metal electrode comprises one of nickel and an alloy including nickel.

Claim 25

Dependent Claim 169 words

A light-emitting semiconductor device comprising: a hetero junction structure including: an n-layer having n-type conduction and a Group III nitride compound semiconductor satisfying the formula Al x1 Ga y1 In 1-x1-y1 N, wherein 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1+1, a p-layer having p-type conduction and a Group III nitride compound satisfying the formula Al x3 Ga y3 In 1-x3-y3 N, wherein 0≦x3≦1, 0≦y3≦1, and 0≦x3+y3≦1, and an emission layer of a Group III nitride compound satisfying the formula Al x2 Ga y2 In 1-x2-y2 N, wherein 0≦x2≦1, 0≦y2≦1, and 0≦x2+y2≦1 and being formed between said n-layer and said p-layer; a contact layer having p-type conduction and a Group III nitride compound satisfying the formula Al x4 Ga y4 In 1-x4-y4 N wherein 0≦x4≦1, 0≦y4≦1, and 0≦x4+y4≦1, said contact layer being formed on said p-layer; an electrode formed in direct contact in said contact layer; and wherein said contact layer is doped with an acceptor impurity in concentration nearly equal to an impurity concentration that makes minimum driving voltage of said device.

Claim 26

Dependent Claim 169 words

A light-emitting semiconductor device comprising: a hetero junction structure including: an n-layer having n-type conduction and a Group III nitride compound semiconductor satisfying the formula Al x1 Ga y1 In 1-x1-y1 N, wherein 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1+1, a p-layer having p-type conduction and a Group III nitride compound satisfying the formula Al x3 Ga y3 In 1-x3-y3 N, wherein 0≦x3≦1, 0≦y3≦1, and 0≦x3+y3≦1, and an emission layer of a Group III nitride compound satisfying the formula Al x2 Ga y2 In 1-x2-y2 N, wherein 0≦x2≦1, 0≦y2≦1, and 0≦x2+y2≦1 and being formed between said n-layer and said p-layer; a contact layer having p-type conduction and a Group III nitride compound satisfying the formula Al x4 Ga y4 In 1-x4-y4 N wherein 0≦x4≦1, 0≦y4≦1, and 0≦x4+y4≦1, said contact layer being formed on said p-layer; an electrode formed in direct contact in said contact layer; and wherein said contact layer is doped with an acceptor impurity in concentration nearly equal to an impurity concentration that makes minimum driving voltage of said device.

Claim 27

Dependent Claim 35 words

A light-emitting semiconductor device according to claim 23, wherein said acceptor impurity doped into said contact layer is magnesium and wherein said impurity concentration that makes minimum driving voltage is 2×10 20 /cm 3 .

Claim 28

Dependent Claim 15 words

A light-emitting semiconductor device according to claim 23, wherein said contact layer is gallium nitride.

Claim 29

Dependent Claim 18 words

A light-emitting semiconductor device according to claim 23, wherein said contact layer is Ga y4 In 1-y4 N.

Claim 30

Dependent Claim 21 words

A light-emitting semiconductor device according to claim 23, wherein said metal electrode comprises one of nickel and an alloy including nickel.

Claim 31

Dependent Claim 267 words

A light-emitting semiconductor device comprising: a hetero junction including: an n-layer having n-type conduction and a Group III nitride compound semiconductor satisfying the formula Al x1 Ga y1 In 1-x1-y1 N, wherein 0≦y1≦1, 0≦x1≦1, and 0≦x1+y1≦1, a p-layer having p-type conduction and a Group III nitride compound satisfying the formula Al x3 Ga y3 In 1-x3-y3 N, wherein 0≦x3≦1, 0≦y3≦1, and 0≦x3+y3≦1, and an emission layer of a Group III nitride compound satisfying the formula Al x2 Ga y2 In 1-x2-y2 N, wherein 0≦x2≦1, 0≦y2≦1, and 0≦x2+y2≦1 and being formed between said n-layer and said p-layer, a contact layer having p-type conduction formed on said p-layer and a Group III nitride compound satisfying the formula Al x4 Gs y4 In 1-x4-y4 N, wherein 0≦x4≦1, 0≦y4≦1, and 0≦x4+y4≦1; a metal electrode formed in direct contact with said contact layer; and wherein said contact layer has a double layer structure having a first contact layer satisfying the formula Al x5 Ga y5 In 1-x5-y5 N, wherein 0≦x5≦1, 0≦y5≦1, and 0≦x5+y5≦1 and a second contact layer satisfying the formula Al x6 Ga y6 In 1-x6-y6 N, where 0≦x6≦1, 0≦y6≦1, and 0≦x6+y6≦1, wherein said first contact layer is formed on said second contact layer in direct contact with said metal electrode and is doped with magnesium in the range of about 1×10 20 /cm 3 to about 1×10 21 /cm 3 , and wherein said second contact layer is formed on said p-layer and is doped more lightly than said first contact layer with magnesium in the range of about 1×10 19 /cm 3 to about 5×10 20 /cm 3 .

Claim 32

Dependent Claim 267 words

A light-emitting semiconductor device comprising: a hetero junction including: an n-layer having n-type conduction and a Group III nitride compound semiconductor satisfying the formula Al x1 Ga y1 In 1-x1-y1 N, wherein 0≦y1≦1, 0≦x1≦1, and 0≦x1+y1≦1, a p-layer having p-type conduction and a Group III nitride compound satisfying the formula Al x3 Ga y3 In 1-x3-y3 N, wherein 0≦x3≦1, 0≦y3≦1, and 0≦x3+y3≦1, and an emission layer of a Group III nitride compound satisfying the formula Al x2 Ga y2 In 1-x2-y2 N, wherein 0≦x2≦1, 0≦y2≦1, and 0≦x2+y2≦1 and being formed between said n-layer and said p-layer, a contact layer having p-type conduction formed on said p-layer and a Group III nitride compound satisfying the formula Al x4 Gs y4 In 1-x4-y4 N, wherein 0≦x4≦1, 0≦y4≦1, and 0≦x4+y4≦1; a metal electrode formed in direct contact with said contact layer; and wherein said contact layer has a double layer structure having a first contact layer satisfying the formula Al x5 Ga y5 In 1-x5-y5 N, wherein 0≦x5≦1, 0≦y5≦1, and 0≦x5+y5≦1 and a second contact layer satisfying the formula Al x6 Ga y6 In 1-x6-y6 N, where 0≦x6≦1, 0≦y6≦1, and 0≦x6+y6≦1, wherein said first contact layer is formed on said second contact layer in direct contact with said metal electrode and is doped with magnesium in the range of about 1×10 20 /cm 3 to about 1×10 21 /cm 3 , and wherein said second contact layer is formed on said p-layer and is doped more lightly than said first contact layer with magnesium in the range of about 1×10 19 /cm 3 to about 5×10 20 /cm 3 .

Claim 33

Dependent Claim 15 words

A light-emitting semiconductor device according to claim 28, wherein said contact layer is gallium nitride.

Claim 34

Dependent Claim 30 words

A light-emitting semiconductor device according to claim 28, wherein said first contact layer is Ga y5 In 1-y5 N and said second contact layer is Ga y6 In 1-y6 N.

Claim 35

Dependent Claim 17 words

A light-emitting semiconductor device according to claim 28, wherein said p-layer is Al x3 Ga 1-x3 N.

Claim 36

Dependent Claim 22 words

A light-emitting semiconductor device according to claim 28, wherein said first contact layer has lower carrier concentration than said second contact layer.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2001-05-18	2001-11-17	2002-05-19	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2005-05-18	2005-11-17	2006-05-19	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2009-05-18	2009-11-17	2010-05-19	$7700.00	Window Closed / Lapsed

Light-emitting semiconductor device using a Group III nitride compound and having a contact layer upon which an electrode is formed

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