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EP0675552A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Light emitting semiconductor device using group III nitrogen compound

Assignee: Toyoda Gosei Co Ltd
•
Filing: 1995-03-21
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Granted: —
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Expires: 2015-03-21
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Abstract

Abstract A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n⁺-layer (3) of high carrier (n-type) concentration, a Si-doped (Al x3 Ga 1-x3 ) y3 In 1-y3 N n⁺-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Al x2 Ga 1-x2 ) y2 In 1-y2 N emission layer (5), and a Mg-doped (Al x1 Ga 1-x1 ) y1 In 1-y1 N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n⁺-layer (3) has about a 2.0 µm thickness and a 2 x 10¹⁸/cm³ electron concentration. The n⁺-layer (4) has about a 2.0 µm thickness and a 2 x 10¹⁸/cm³ electron concentration. The emission layer (5) has about a 0.5 µm thickness. The p-layer 6 has about a 1.0 µm thickness and a 2 x 10¹⁷/cm³ hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n⁺-layer (4) , respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n⁺-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.

Inventors

  • 👤 Katsuhide C/O Toyoda Gosei Heiwacho Plant Manabe
  • 👤 Hisaki C/O Toyoda Gosei Heiwacho Plant Kato
  • 👤 Michinari C/O Toyoda Gosei Heiwacho Plant Sassa
  • 👤 Shiro C/O Toyoda Gosei Heiwacho Plant Yamazaki
  • 👤 Makoto C/O Toyoda Gosei Heiwacho Plant Asai
  • 👤 Naoki C/O Toyoda Gosei Heiwacho Plant Shibata
  • 👤 Masayoshi C/O Toyoda Gosei Heiwacho Plant Koike

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-30 16:32
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/831; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/81; H10H20/811; H10H20/822; H10H20/824; H10H20/825; H10H20/8252; H10H20/8312; H10H20/832

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 150 words
A light-emitting semiconductor device comprising: an n-layer (4) with n-type conduction of group III nitride compound semiconductor satisfying the formula Al x3 Ga y3 In 1-x3-y3 N, inclusive of x3=0, y3=0 and x3=y3=0; a p-layer (6, 61) with p-type conduction of group III nitride compound semiconductor satisfying the formula Al x1 Ga y1 In 1-x1-y1 N, inclusive of x1=0, y1=0 and x1=y1=0; an emission layer (5) of group III nitride compound semiconductor satisfying the formula Al x2 Ga y2 In 1-x2-y2 N, inclusive of x2=0, y2=0 and x2=y2=0 and being formed between said n-layer (4) and said p-layer (6, 61); and a junction structure of said n-layer (4), said p-layer (6, 61), and said emission layer (5) being any one of a homo-junction structure, a single hetero-junction structure, and a double hetero-junction structure; characterized in that said emission layer (5) is doped with both a donor and an acceptor impurity.
Claim 2
Dependent Claim 29 words
A light-emitting semiconductor device of claim 1, wherein said donor impurity is one of the group IV elements and said acceptor impurity is one of the group II elements.
Claim 3
Dependent Claim 21 words
A light-emitting semiconductor device of claim 2, wherein said donor impurity is silicon (Si) and said acceptor impurity is zinc (Zn).
Claim 4
Dependent Claim 37 words
A light-emitting semiconductor device of claim 1, wherein said emission layer (5) exhibits any one of n-type conduction, semi-insulative and p-type conduction characteristics depending on concentration ratio of said donor impurity and said acceptor impurity doped thereto.
Claim 5
Dependent Claim 18 words
A light-emitting semiconductor device of claim 1, wherein said donor impurity is one of the group VI elements.
Claim 6
Dependent Claim 55 words
A light-emitting semiconductor device of claim 1, wherein the composition ratio of Al, Ga and In in said n-layer (4), said p-layer (6) and said emission (5) layer is designed to meet each of the lattice constants of said layers (4, 5, 6) to a lattice constant of an n⁺-layer (3) of high carrier concentration.
Claim 7
Dependent Claim 129 words
A light-emitting semiconductor device comprising: an n-layer (4) with n-type conduction of group III nitride compound semiconductor satisfying the formula Al x3 Ga y3 In 1-x3-y3 N, inclusive of x3=0, y3=0 and x3=y3=0; a p-layer (6, 61) with p-type conduction of group III nitride compound semiconductor satisfying the formula Al x1 Ga y1 In 1-x1-y1 N, inclusive of x1=0, y1=0 and x1=y1=0; an emission layer (5) with p-type conduction of group III nitride compound semiconductor satisfying the formula Al x2 Ga y2 In 1-x2-y2 N, inclusive of x2=0, y2=0 and x2=y2=0 sandwiched between said n-layer (4) and said p-layer (6, 61); and characterized in that said emission layer (5) has a narrower band gap than those of said n-layer (4) and said p-layer (6, 61), and has p-type conduction.
Claim 8
Dependent Claim 24 words
A light-emitting semiconductor device of claim 7, wherein said emission layer (5) is doped with magnesium (Mg), a donor impurity, and an acceptor impurity.
Claim 9
Dependent Claim 57 words
A light-emitting semiconductor device of claim 7, wherein the composition ratio of Al, Ga, and In in said p-layer (6, 61), said n-layer (4), and said emission layer (5) is designed to meet each of the lattice constants of said layers (4, 5, 6, 61) to a lattice constant of an n⁺-layer (3) of high carrier concentration.

References Cited (Backward Citations)

EP0599224A1 Cited

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