US5780876A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Compound semiconductor light emitting device and manufacturing method thereof
Assignee: Sharp Corp
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Filing: 1996-04-22
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Granted: 1998-07-14
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Expires: 2016-04-22
Abstract
Abstract After the active layer including indium is formed, the evaporation preventing layer is formed at a temperature which does not cause liberation of indium. The p-type Al x Ga 1-x N (0≦X≦1) or the like is used for the evaporation preventing layer. Increasing the substrate temperature to as high as 1020° C. for forming the upper cladding layer does not cause liberation of indium from the active layer because the evaporation preventing layer is provided. As a result, the composition ratio of indium can be easily controlled and the high-quality active layer and the high-quality interface between the active layer and the upper cladding layer can be provided.
Inventors
- 👤 Toshio Hata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 21:33
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32341; Y; Y10; Y10S; Y10S148/00; Y10S148/095
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
61 words
A compound semiconductor light emitting device, comprising: a substrate; a lower cladding layer formed on said substrate; an active layer including indium formed on said lower cladding layer; an evaporation preventing layer formed on said active layer; and an upper cladding layer formed on said evaporation preventing layer, wherein said evaporation preventing layer includes Al 0 .4 Ga 0 .6 N.
Claim 2
Dependent Claim
61 words
A compound semiconductor light emitting device, comprising: a substrate; a lower cladding layer formed on said substrate; an active layer including indium formed on said lower cladding layer; an evaporation preventing layer formed on said active layer; and an upper cladding layer formed on said evaporation preventing layer, wherein said evaporation preventing layer includes Al 0 .4 Ga 0 .6 N.
Claim 3
Dependent Claim
24 words
The compound semiconductor light emitting device according to claim 1, further comprising a buffer layer formed between said substrate and said lower cladding layer.
Claim 4
Dependent Claim
21 words
The compound semiconductor light emitting device according to claim 1, further comprising a cap layer formed on said upper cladding layer.
Claim 5
Dependent Claim
23 words
The compound semiconductor light emitting device according to claim 1, wherein said active layer includes an active layer with strained layer quantum well.
Claim 6
Dependent Claim
20 words
The compound semiconductor light emitting device according to claim 4, wherein said device is provided with a Ridge waveguide structure.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-07-13 | 2002-01-12 | 2002-07-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-07-13 | 2006-01-12 | 2006-07-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-07-13 | 2010-01-12 | 2010-07-14 | $7700.00 | Window Closed / Lapsed |