US5583879A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gallum nitride group compound semiconductor laser diode
Assignee: RESEARCH DEVELOPMENT
•
Filing: 1995-04-19
•
Granted: 1996-12-10
•
Expires: 2015-04-19
Abstract
Abstract A gallium nitride group compound semiconductor laser diode (10) satisfying the formula (Al x Ga 1-x ) y In 1-y N, inclusive of 0≦x≦1 and 0≦y≦1 comprises by a double hetero-junction structure sandwiching an active layer (5) between layers (4, 6) having wider band gaps than the active layer (5). The active layer (5) may comprise magnesium (Mg) doped p-type conductive gallium nitride group compound semiconductor satisfying the formula (Al x Ga 1-x ) y In 1-y N, inclusive of 0≦x≦1 and 0≦y≦1 . In another embodiment, the active layer (5) is doped with silicon (Si).
Inventors
- 👤 Shiro Yamazaki
- 👤 Norikatsu Koide
- 👤 Katsuhide Manabe
- 👤 Isamu Akasaki
- 👤 Hiroshi Amano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 21:15
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32341; H01S5/305; H01S5/3086
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
76 words
A gallium nitride group compound semiconductor laser diode satisfying the formula (Al x Ga 1-x ) y In 1-y N, inclusive of 0≦X≦1 and 0≦y≦1 comprising: a double hetero-junction structure sandwiching an active layer between layers having wider band gaps than said active layer wherein said active layer comprises a magnesium (Mg)-doped p-type conductive gallium nitride group compound semiconductor satisfying the formula (Al x Ga 1-x ) y In 1-y N, inclusive of 0≦X≦1 and 0≦y≦1.
Claim 2
Dependent Claim
76 words
A gallium nitride group compound semiconductor laser diode satisfying the formula (Al x Ga 1-x ) y In 1-y N, inclusive of 0≦X≦1 and 0≦y≦1 comprising: a double hetero-junction structure sandwiching an active layer between layers having wider band gaps than said active layer wherein said active layer comprises a magnesium (Mg)-doped p-type conductive gallium nitride group compound semiconductor satisfying the formula (Al x Ga 1-x ) y In 1-y N, inclusive of 0≦X≦1 and 0≦y≦1.
Claim 3
Dependent Claim
30 words
The semiconductor laser diode according to claim 1, wherein said active layer is formed over a structure including a substrate, a buffer layer, an n + -layer, and an n-layer.
Claim 4
Dependent Claim
39 words
The semiconductor laser diode according to claim 1, wherein said active layer comprises a layer modified to be a p-type semiconductor by performing one or more of electron irradiation, laser irradiation, and heat treatment on a magnesium (Mg)-doped layer.
Claim 5
Dependent Claim
42 words
The semiconductor laser diode according to claim 1, wherein said active layer comprises a layer modified to be a p-type semiconductor by performing heat treatment to a magnesium (Mg)-doped layer in an atmosphere of nitrogen (N 2 ) under a plasma state.
Claim 6
Dependent Claim
76 words
A gallium nitride group compound semiconductor laser diode satisfying the formula (Al x Ga 1-x ) y In 1-y N, inclusive of 0≦X≦1 and 0≦y≦1 comprising: a double hetero-junction structure sandwiching an active layer between layers having wider band gaps than said active layer wherein said active layer comprises a silicon (Si)-doped n-type conductive gallium nitride group compound semiconductor satisfying the formula (Al x Ga 1-x ) y In 1-y N, inclusive of 0≦X≦1 and 0≦y≦1.
Claim 7
Dependent Claim
76 words
A gallium nitride group compound semiconductor laser diode satisfying the formula (Al x Ga 1-x ) y In 1-y N, inclusive of 0≦X≦1 and 0≦y≦1 comprising: a double hetero-junction structure sandwiching an active layer between layers having wider band gaps than said active layer wherein said active layer comprises a silicon (Si)-doped n-type conductive gallium nitride group compound semiconductor satisfying the formula (Al x Ga 1-x ) y In 1-y N, inclusive of 0≦X≦1 and 0≦y≦1.
Claim 8
Dependent Claim
39 words
The semiconductor laser diode according to claim 5, wherein said active layer comprises a layer modified to be a p-type semiconductor by performing one or more of electron irradiation, laser irradiation and heat treatment on a silicon (Si)-doped layer.
Claim 9
Dependent Claim
42 words
The semiconductor laser diode according to claim 5, wherein said active layer comprises a layer modified to be a p-type semiconductor by performing heat treatment to a silicon (Si)-doped layer in an atmosphere of nitrogen (N 2 ) under a plasma state.
References Cited (Backward Citations)
US4903088A
Cited
US5247533A
Cited
US5321713A
Cited
EP0599224A1
Cited
JPH06268259A
Cited
JPH06283825A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-10 | 2000-06-10 | 2000-12-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-10 | 2004-06-10 | 2004-12-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-10 | 2008-06-10 | 2008-12-10 | $7700.00 | Window Closed / Lapsed |