US5751013A
Expired / Lapsed
US
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Semiconductor light-emitting device and production method thereof
Assignee: Panasonic Holdings Corp
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Filing: 1995-07-20
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Granted: 1998-05-12
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Expires: 2015-07-20
Abstract
Abstract A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga 1-x In x N (0≦x≦0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so as to sandwich the active layer.
Inventors
- 👤 Isao Kidoguchi
- 👤 Hideto Adachi
- 👤 Akihiko Ishibashi
- 👤 Kiyoshi Ohnaka
- 👤 Yuzaburo Ban
- 👤 Minoru Kubo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 16:50
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/85; H10H20/858; H10H20/8582; H01; H01S; H01S5/00; H01S5/02; H01S5/022; H01S5/023; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H01S5/30; H01S5/305; H01S5/32; H01S5/323; H01S5/32308; H01S5/32341; H01S5/327; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/81; H10H20/8215; H10H20/822; H10H20/824; H10H20/825; H10H20/8252; H10W; H10W72/00; H10W72/071; H10W72/072; H10W72/20; H01S5/0206; H01S5/0213; H01S5/0233; H01S5/0234; H01S5/0235; H01S5/02355; H01S5/0237; H01S5/04; H01S5/042; H01S5/0421; H01S5/0422; H01S5/10; H01S5/16; H01S5/162; H01S5/2054; H01S5/2059; H01S5/2063; H01S5/3054; H01S5/3063; H01S5/3086; H10H20/036; H10H20/0365; H10W72/073; H10W74/00; H10W74/10; H10W74/15
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
44 words
A semiconductor light-emitting device with a double hetero structure, comprising: an active layer made of Ga 1-x In x N (0≦x≦0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so as to sandwich the active layer.
Claim 2
Dependent Claim
44 words
A semiconductor light-emitting device with a double hetero structure, comprising: an active layer made of Ga 1-x In x N (0≦x≦0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so as to sandwich the active layer.
Claim 3
Dependent Claim
24 words
A semiconductor light-emitting device according to claim 1, wherein the active layer is substantially uniformly doped with the p-type impurity and the n-type impurity.
Claim 4
Dependent Claim
58 words
A semiconductor light-emitting device according to claim 1, wherein the first cladding layer has a p-type conductivity, concentration of the p-type impurity in the active layer is low on a side adjacent to the first cladding layer, and concentration of the p-type impurity in the active layer is high on a side adjacent to the second cladding layer.
Claim 5
Dependent Claim
43 words
A semiconductor light-emitting device according to claim 1, wherein the active layer has a structure in which a plurality of p-type layers doped only with a p-type impurity and a plurality of n-type layers doped only with an n-type impurity are alternately layered.
Claim 6
Dependent Claim
49 words
A semiconductor light-emitting device according to claim 4, wherein the first cladding layer has a p-type conductivity, and impurity concentration of the plurality of p-type layers in the active layer increases from a side adjacent to the first cladding layer to a side adjacent to the second cladding layer.
Claim 7
Dependent Claim
33 words
A semiconductor light-emitting device according to claim 5, wherein the plurality of p-type layers and the plurality of n-type layers are substantially uniformly doped with the p-type impurity and the n-type impurity, respectively.
Claim 8
Dependent Claim
48 words
A semiconductor light-emitting device according to claim 1, wherein the active layer has a structure in which the plurality of GaN layers and the plurality of InN layers are alternately layered, and only the plurality of InN layers are doped with the p-type impurity and the n-type impurity.
Claim 9
Dependent Claim
41 words
A semiconductor light-emitting device according to claim 1, wherein the active layer is doped with the p-type impurity and the n-type impurity respectively in an impurity concentration in the range of 10 17 cm -3 to 10 20 cm -3 .
Claim 10
Dependent Claim
31 words
A semiconductor light-emitting device according to claim 1, wherein the p-type impurity is either of zinc, magnesium, or carbon, and the n-type impurity is either of silicon, sulfur, selenium, or tellurium.
Claim 11
Dependent Claim
24 words
A semiconductor light-emitting device according to claim 1, wherein the first and second cladding layers are made of Al y Ga 1-y N (0≦y≦0.3).
Claim 12
Dependent Claim
37 words
A semiconductor light-emitting device according to claim 1, wherein the first cladding layer has a p-type conductivity, and energy difference of conduction bands of the active layer and the first cladding layer is 0.3 eV or more.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-05-11 | 2001-11-10 | 2002-05-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-05-11 | 2005-11-10 | 2006-05-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-05-11 | 2009-11-10 | 2010-05-12 | $7700.00 | Window Closed / Lapsed |