US5563422A
Expired / Lapsed
US
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Gallium nitride-based III-V group compound semiconductor device and method of producing the same
Assignee: Nichia Corp
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Filing: 1994-04-28
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Granted: 1996-10-08
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Expires: 2014-04-28
Abstract
Abstract A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
Inventors
- 👤 Shuji Nakamura
- 👤 Takao Yamada
- 👤 Masayuki Senoh
- 👤 Motokazu Yamada
- 👤 Kanji Bando
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 11:46
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/832; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0116; H10F; H10F71/00; H10F71/138; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H10H20/8252; H10H20/833; H10D62/00; H10D62/80; H10D62/85; H10D62/8503; H10H20/01; H10H20/032; H10H20/831; H10H20/84; H10W; H10W72/00; H10W72/071; H10W72/075; H10W72/07551; H10W72/07554; H10W72/50; H10W72/531; H10W72/536; H10W72/541; H10W72/547; H10W72/551; H10W72/552; H10W72/5522; H10W72/59; H10W72/851; H10W72/874; H10W72/884; H10W72/90; H10W72/921; H10W72/923; H10W72/926; H10W72/951; H10W72/952; H10W90/00; H10W90/701; H10W90/751; H10W90/756; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 58
Claim 1
Independent Claim
101 words
A gallium nitride-based III-V Group compound semiconductor device, comprising: a substrate having first and second major surface; a semiconductor stacked structure arranged over said first major surface of the substrate, and comprising an n-type gallium nitride-based III-V Group compound semiconductor layer and a p-type gallium nitride-based III-V Group compound semiconductor layer; a first electrode provided in electrical contact with said n-type semiconductor layer; and a light-transmitting, second electrode provided in contact with said p-type semiconductor layer, and comprising a layer of nickel or a layer comprising nickel and gold, said second electrode establishing an ohmic contact with said p-type semiconductor layer.
Claim 2
Dependent Claim
101 words
A gallium nitride-based III-V Group compound semiconductor device, comprising: a substrate having first and second major surface; a semiconductor stacked structure arranged over said first major surface of the substrate, and comprising an n-type gallium nitride-based III-V Group compound semiconductor layer and a p-type gallium nitride-based III-V Group compound semiconductor layer; a first electrode provided in electrical contact with said n-type semiconductor layer; and a light-transmitting, second electrode provided in contact with said p-type semiconductor layer, and comprising a layer of nickel or a layer comprising nickel and gold, said second electrode establishing an ohmic contact with said p-type semiconductor layer.
Claim 3
Dependent Claim
26 words
The device according to claim 1, wherein a light emitted from the device is observed at a side of said first major surface of the substrate.
Claim 4
Dependent Claim
34 words
The device according to claim 1, wherein said second electrode comprises a layer of nickel provided in direct contact with said p-type semiconductor layer, and a layer of gold provided on said nickel layer.
Claim 5
Dependent Claim
19 words
The device according to claim 1, wherein said second electrode has a thickness of 0.001 μm to 1 μm.
Claim 6
Dependent Claim
25 words
The device according to claim 1, wherein said second electrode has been subjected to an annealing treatment at a temperature of 400° C. or more.
Claim 7
Dependent Claim
22 words
The device according to claim 1, further comprising a lead frame supporting said device at said second major surface of the substrate.
Claim 8
Dependent Claim
23 words
The device according to claim 1, further comprising a bonding pad electrically connected to said second electrode, for bonding with a bonding wire.
Claim 9
Dependent Claim
26 words
The device according to claim 7, wherein said bonding pad is formed of gold or a metallic material comprising gold, and not containing aluminum or chromium.
Claim 10
Dependent Claim
34 words
The device according to claim 7, wherein said bonding pad is formed of a metallic material comprising gold and at least one metal selected from the group consisting of titanium, nickel, indium and platinum.
Claim 11
Dependent Claim
21 words
The device according to claim 7, wherein said bonding pad is formed of the same metallic material forming said second electrode.
Claim 12
Dependent Claim
33 words
The device according to claim 7, wherein said bonding pad comprises a layer of nickel provided in direct contact with said second electrode, and a layer of gold provided on said nickel layer.
Claim 13
Dependent Claim
35 words
The device according to claim 7, wherein said second electrode has a cut-off portion exposing a part of the surface of said p-type semiconductor layer, and said bonding pad is filled in said cut-off portion.
Claim 14
Dependent Claim
29 words
The device according to claim 12, wherein said bonding pad is formed of a metallic material which adheres to said p-type semiconductor layer more strongly than said second electrode.
Claim 15
Dependent Claim
33 words
The device according to claim 13, wherein said bonding pad is formed of aluminum, or a metallic material comprising at least two metals selected from the group consisting of chromium, aluminum and gold.
Claim 16
Dependent Claim
17 words
The device according to claim 7, wherein said bonding pad is arranged farthest from said first electrode.
Claim 17
Dependent Claim
23 words
The device according to claim 1, comprising a protective film formed of a transparent and electrically insulative material, and covering said second electrode.
Claim 18
Dependent Claim
22 words
The device according to claim 16, wherein said protective film is formed of silicon oxide, aluminum oxide, titanium oxide, or silicon nitride.
Claim 19
Dependent Claim
18 words
The device according to claim 16, wherein said protective film also covers a surface of said first electrode.
Claim 20
Dependent Claim
28 words
The device according to claim 7, further comprising a protective film formed of a transparent and electrically insulative material, and covering said second electrode and said bonding pad.
Claim 21
Dependent Claim
22 words
The device according to claim 19, wherein said protective film is formed of silicon oxide, aluminum oxide, titanium oxide, or silicon nitride.
Claim 22
Dependent Claim
15 words
The device according to claim 19, wherein said protective film also covers said first electrode.
Claim 23
Dependent Claim
122 words
A gallium nitride-based III-V Group compound semiconductor device, comprising: a substrate having first and second major surfaces; a semiconductor stacked structure arranged over said first major surface of the substrate, and comprising an n-type gallium nitride-based III-V Group compound semiconductor layer and a p-type gallium nitride-based III-V Group compound semiconductor layer; a first electrode provided n contact with said n-type semi-conductor layer and comprising a first film comprising a combination of titanium with aluminum, and a second film provided on said first film and comprising a high-melting point metallic material having a melting point higher than aluminum, said first electrode establishing an ohmic contact with said n-type semiconductor layer; and a second electrode provided in electrical contact with said p-type semiconductor layer.
Claim 24
Dependent Claim
122 words
A gallium nitride-based III-V Group compound semiconductor device, comprising: a substrate having first and second major surfaces; a semiconductor stacked structure arranged over said first major surface of the substrate, and comprising an n-type gallium nitride-based III-V Group compound semiconductor layer and a p-type gallium nitride-based III-V Group compound semiconductor layer; a first electrode provided n contact with said n-type semi-conductor layer and comprising a first film comprising a combination of titanium with aluminum, and a second film provided on said first film and comprising a high-melting point metallic material having a melting point higher than aluminum, said first electrode establishing an ohmic contact with said n-type semiconductor layer; and a second electrode provided in electrical contact with said p-type semiconductor layer.
Claim 25
Dependent Claim
34 words
The device according to claim 22, wherein said first electrode comprises a layer of titanium provided in direct contact with said n-type semiconductor layer, and a layer of aluminum, provided on said titanium layer.
Claim 26
Dependent Claim
43 words
The device according to claim 22, wherein said first electrode comprises a layer of titanium provided in direct contact with said n-type semiconductor layer, a layer of aluminum provided on said titanium layer, and a layer of gold provided on said aluminum layer.
Claim 27
Dependent Claim
12 words
The device according to claim 22, wherein said second film comprises titanium.
Claim 28
Dependent Claim
16 words
The device according to claim 22, wherein said second film comprises gold, and titanium and/or nickel.
Claim 29
Dependent Claim
25 words
The device according to claim 22, wherein said first electrode has been subjected to an annealing treatment at a temperature of 400° C. or more.
Claim 30
Dependent Claim
22 words
The device according to claim 22, further comprising a lead frame supporting the device at said second major surface of the substrate.
Claim 31
Dependent Claim
23 words
The device according to claim 22, further comprising a bonding pad electrically connected to said second electrode, for bonding with a bonding wire
Claim 32
Dependent Claim
17 words
The device according to claim 29, wherein said bonding pad is arranged farthest from said first electrode.
Claim 33
Dependent Claim
14 words
The device according to claim 22, wherein said second electrode comprises nickel and gold.
Claim 34
Dependent Claim
89 words
A gallium nitride-based compound III-V group semiconductor device, comprising: a substrate having first and second major surfaces; a semiconductor stacked structure arranged over said first major surface of the substrate, and comprising an n-type gallium nitride-based III-V Group compound semiconductor layer and a p-type gallium nitride-based III-V Group compound semiconductor layer; a first ohmic electrode provided in contact with said n-type semiconductor layer, and comprising a combination of titanium with aluminum; and a light-transmitting, second ohmic electrode provided to cover substantially the entire surface of said p-type semiconductor layer.
Claim 35
Dependent Claim
89 words
A gallium nitride-based compound III-V group semiconductor device, comprising: a substrate having first and second major surfaces; a semiconductor stacked structure arranged over said first major surface of the substrate, and comprising an n-type gallium nitride-based III-V Group compound semiconductor layer and a p-type gallium nitride-based III-V Group compound semiconductor layer; a first ohmic electrode provided in contact with said n-type semiconductor layer, and comprising a combination of titanium with aluminum; and a light-transmitting, second ohmic electrode provided to cover substantially the entire surface of said p-type semiconductor layer.
Claim 36
Dependent Claim
44 words
The device according to claim 32, wherein said first ohmic electrode comprises a layer of titanium provided in direct contact with said n-type semiconductor layer, a layer of aluminum provided on said titanium layer, and a layer of gold provided on said aluminum layer.
Claim 37
Dependent Claim
35 words
The device according to claim 32, wherein said second ohmic electrode comprises a layer of nickel provided in direct contact with said p-type semiconductor layer and a layer of gold provided on said nickel layer.
Claim 38
Dependent Claim
23 words
The device according to claim 34, further comprising a bonding pad electrically connected to said second electrode, for bonding with a bonding wire.
Claim 39
Dependent Claim
57 words
The device according to claim 35, wherein said first major surface is substantially square, said bonding pad is arranged at a first corner portion of said second electrode, and said first electrode is arranged on said n-type semiconductor layer at a second corner portion thereof on a diagonal line of the square, including said first corner portion.
Claim 40
Dependent Claim
33 words
The device according to claim 36, wherein said bonding pad comprises a layer of nickel provided in direct contact with said second electrode, and a layer of gold provided on said nickel layer.
Claim 41
Dependent Claim
65 words
The device according to claim 36, wherein said second electrode has a cut-off portion exposing a portion of the surface of said p-type semiconductor layer, said bonding pad is filled in said cut-off portion, said bonding pad comprising a first layer comprising chromium or aluminum provided in direct contact with said p-type semiconductor layer, and a second layer comprising gold provided on said first layer.
Claim 42
Dependent Claim
15 words
The device according to claim 38, further comprising a transparent and electrically insulative protective film.
Claim 43
Dependent Claim
22 words
The device according to claim 39, further comprising a lead frame supporting the device at said second major surface of the substrate.
Claim 44
Dependent Claim
26 words
The device according to claim 40, wherein a light emitted from the device is observed at a side of said first major surface of the substrate.
Claim 45
Dependent Claim
121 words
A gallium nitride-based compound III-V Group semiconductor device, comprising: a substrate having first and second major surfaces; a semiconductor stacked structure arranged over said first major surface of the substrate, and comprising an n-type gallium nitride-based III-V Group compound semiconductor layer and a p-type gallium nitride-based III-V Group compound semiconductor layer; a first electrode provided in electrical contact with said n-type semiconductor layer; and a second electrode provided in contact with said p-type semiconductor layer and comprising a layer of nickel or a layer comprising nickel and gold, said layer of nickel or said layer comprising nickel and gold being provided in direct contact with said p-type semiconductor layer, said second electrode establishing an ohmic contact with said p-type semiconductor layer.
Claim 46
Dependent Claim
121 words
A gallium nitride-based compound III-V Group semiconductor device, comprising: a substrate having first and second major surfaces; a semiconductor stacked structure arranged over said first major surface of the substrate, and comprising an n-type gallium nitride-based III-V Group compound semiconductor layer and a p-type gallium nitride-based III-V Group compound semiconductor layer; a first electrode provided in electrical contact with said n-type semiconductor layer; and a second electrode provided in contact with said p-type semiconductor layer and comprising a layer of nickel or a layer comprising nickel and gold, said layer of nickel or said layer comprising nickel and gold being provided in direct contact with said p-type semiconductor layer, said second electrode establishing an ohmic contact with said p-type semiconductor layer.
Claim 47
Dependent Claim
111 words
A gallium nitride-based compound III-V Group semiconductor device, comprising: a substrate having first and second major surfaces; a semiconductor stacked structure arranged over said first major surface of the substrate, and comprising an n-type gallium nitride-based III-V Group compound semiconductor layer and a p-type gallium nitride-based III-V Group compound semiconductor layer; and an electrode assembly comprising a metallic material annealed to have an ohmic contact with the compound semiconductor layer, said electrode assembly including; a first electrode provided in contact with said n-type semiconductor layer and comprising titanium and aluminum, or titanium and gold; and a second electrode provided in contact with said p-type semiconductor layer and comprising nickel and gold.
Claim 48
Dependent Claim
111 words
A gallium nitride-based compound III-V Group semiconductor device, comprising: a substrate having first and second major surfaces; a semiconductor stacked structure arranged over said first major surface of the substrate, and comprising an n-type gallium nitride-based III-V Group compound semiconductor layer and a p-type gallium nitride-based III-V Group compound semiconductor layer; and an electrode assembly comprising a metallic material annealed to have an ohmic contact with the compound semiconductor layer, said electrode assembly including; a first electrode provided in contact with said n-type semiconductor layer and comprising titanium and aluminum, or titanium and gold; and a second electrode provided in contact with said p-type semiconductor layer and comprising nickel and gold.
Claim 49
Dependent Claim
37 words
A gallium nitride-based III-V Group compound semiconductor device, comprising an n-type gallium nitride-based III-V Group compound semiconductor layer, and an ohmic electrode provided in direct contact with said n-type semiconductor layer, said electrode comprising titanium and aluminum.
Claim 50
Dependent Claim
37 words
A gallium nitride-based III-V Group compound semiconductor device, comprising an n-type gallium nitride-based III-V Group compound semiconductor layer, and an ohmic electrode provided in direct contact with said n-type semiconductor layer, said electrode comprising titanium and aluminum.
Claim 51
Dependent Claim
24 words
The device according to claim 44, wherein said electrode comprises a layer of titanium, and a layer of aluminum provided on said titanium layer.
Claim 52
Dependent Claim
48 words
A gallium nitride-based III-V Group compound semiconductor device, comprising an n-type gallium nitride-based III-V Group compound semiconductor layer, and an ohmic electrode provided in direct contact with an etched surface of said n-type semiconductor layer, said electrode comprising titanium and gold, and annealed at 400° C. or more.
Claim 53
Dependent Claim
48 words
A gallium nitride-based III-V Group compound semiconductor device, comprising an n-type gallium nitride-based III-V Group compound semiconductor layer, and an ohmic electrode provided in direct contact with an etched surface of said n-type semiconductor layer, said electrode comprising titanium and gold, and annealed at 400° C. or more.
Claim 54
Dependent Claim
38 words
A gallium nitride-based III-V Group compound semiconductor device, comprising an n-type gallium nitride-based III-V Group compound semiconductor layer, and an ohmic electrode provided in direct contact with said n-type semiconductor layer, said electrode comprising titanium, aluminum and gold.
Claim 55
Dependent Claim
38 words
A gallium nitride-based III-V Group compound semiconductor device, comprising an n-type gallium nitride-based III-V Group compound semiconductor layer, and an ohmic electrode provided in direct contact with said n-type semiconductor layer, said electrode comprising titanium, aluminum and gold.
Claim 56
Dependent Claim
37 words
A gallium nitride-based III-V Group compound semiconductor device, comprising a p-type gallium nitride-based III-V Group compound semiconductor layer, and an ohmic electrode provided in direct contact with said p-type semiconductor layer, said electrode comprising nickel and gold.
Claim 57
Dependent Claim
37 words
A gallium nitride-based III-V Group compound semiconductor device, comprising a p-type gallium nitride-based III-V Group compound semiconductor layer, and an ohmic electrode provided in direct contact with said p-type semiconductor layer, said electrode comprising nickel and gold.
Claim 58
Dependent Claim
24 words
The device according to claim 48, wherein said electrode comprises a layer of nickel, and a layer of gold provided on said nickel layer.
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