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Patent US5818092A successfully refreshed from Google Patents.
US5818092A
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US
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Polycide film
Assignee: Intel Corp
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Filing: 1997-01-30
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Granted: 1998-10-06
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Expires: 2017-01-30
Abstract
Abstract A method of forming a polycide thin film. First, a silicon layer is formed. Next, a thin barrier layer is formed on the first silicon layer. A second silicon layer is then formed on the barrier layer. Next, a metal layer is formed on the second silicon layer. The metal layer and the second silicon layer are then reacted together to form a silicide.
Inventors
- 👤 Gang Bai
- 👤 David B. Fraser
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 18:18
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D30/0212; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/0131; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D64/664
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
37 words
A polycide film comprising: a polysilicon layer; a thin oxide barrier layer on said polysilicon layer wherein said thin oxide barrier layer having a thickness between 5-25 Å; and a silicide layer on said thin barrier layer.
Claim 2
Dependent Claim
37 words
A polycide film comprising: a polysilicon layer; a thin oxide barrier layer on said polysilicon layer wherein said thin oxide barrier layer having a thickness between 5-25 Å; and a silicide layer on said thin barrier layer.
Claim 3
Dependent Claim
13 words
The polycide film of claim 1 wherein said barrier layer is an oxide.
Claim 4
Dependent Claim
16 words
The polycide film of claim 1 wherein said oxide barrier layer is between 10-20 Å thick.
Claim 5
Dependent Claim
18 words
Polycide film of claim 3 wherein said polysilicon layer is approximately four times thicker than said silicide layer.
Claim 6
Dependent Claim
29 words
The polycide film of claim 1 wherein said silicide layer is selected from the group consisting of: COSi 2 , TiSi 2 , NiSi, Pd 2 Si, and PtSi.
Claim 7
Dependent Claim
21 words
The polycide film of claim 1 wherein said polycide film has a sheet resistance of less than 5 ohms per square.
Claim 8
Dependent Claim
32 words
A polycide film comprising: a polysilicon layer; a thin passivating layer having a thickness less than 25 Å formed on said polysilicon layer; and a silicide layer on said thin passivating layer.
Claim 9
Dependent Claim
32 words
A polycide film comprising: a polysilicon layer; a thin passivating layer having a thickness less than 25 Å formed on said polysilicon layer; and a silicide layer on said thin passivating layer.
Claim 10
Dependent Claim
21 words
The polycide film of claim 7 wherein said polycide film has a sheet resistance of less than 5 ohms per square.
Claim 11
Dependent Claim
23 words
The polycide film of claim 7 wherein said thin passivating layer is selected from the group consisting of oxides, oxynitrides, and silicon nitride.
Claim 12
Dependent Claim
29 words
The polycide film of claim 7 wherein said silicide layer is selected from the group consisting of: COSi 2 , TiSi 2 , NiSi, Pd 2 Si, and PtSi.
Claim 13
Dependent Claim
81 words
A metal oxide semiconductor transistor comprising: a gate insulating layer; a polycide gate electrode formed on said gate insulating layer, said polycide gate electrode comprising: a polysilicon layer; a thin passivating layer having a thickness ≦25 Å on said polysilicon layer; and a silicide layer on said thin passivating layer; wherein said polycide gate electrode has a sheet resistance of less than 5 ohms per square; and a pair of source/drain regions formed on opposite sides of said polycide gate electrode.
Claim 14
Dependent Claim
81 words
A metal oxide semiconductor transistor comprising: a gate insulating layer; a polycide gate electrode formed on said gate insulating layer, said polycide gate electrode comprising: a polysilicon layer; a thin passivating layer having a thickness ≦25 Å on said polysilicon layer; and a silicide layer on said thin passivating layer; wherein said polycide gate electrode has a sheet resistance of less than 5 ohms per square; and a pair of source/drain regions formed on opposite sides of said polycide gate electrode.
Claim 15
Dependent Claim
24 words
The metal oxide semiconductor transistor of claim 11 wherein said passivating layer is selected from the group consisting of: oxides, oxynitrides, and silicon nitride.
Claim 16
Dependent Claim
31 words
The metal oxide semiconductor transistor of claim 11 wherein said silicide layer is selected from the group consisting of: COSi 2 , TiSi 2 , NiSi, Pd 2 Si, and PtSi.
Claim 17
Dependent Claim
19 words
The metal oxide semiconductor transistor of claim 11 wherein said polycide gate electrode has a length of ≦0.25 microns.
References Cited (Backward Citations)
US5025301A
Cited
US5170242A
Cited
US5164333A
Cited
US5369303A
Cited
US5198832A
Cited
US5543644A
Cited
US5576579A
Cited
US5543362A
Cited
US5597751A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-10-05 | 2002-04-06 | 2002-10-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-10-05 | 2006-04-06 | 2006-10-06 | $3760.00 | Window Closed / Lapsed |
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